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  • 1
    Digitale Medien
    Digitale Medien
    Measurement of ion induced damage-profiles in GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6587-6591 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this study, with the use of a sensitive optical technique, we demonstrate the possibility of measuring the depth distribution of damage in GaAs that is generated by various ion-assisted processes such as ion implantation and ion assisted plasma etching. We have used this technique to measure the depth distribution of damage in both He and Ar implanted GaAs and in inert gas and reactive ion etched GaAs. The sensitivity of the technique allowed us to measure damage profiles over a large range of ion energies and ion doses. We have also confirmed previously published results indicating that damage created by sputter etching is inversely proportional to the mass of the ions used in the etching process.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.355337
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  • 2
    Digitale Medien
    Digitale Medien
    Optical transitions in symmetric, compositionally graded triangular AlGaAs quantum wells grown by molecular beam epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3486-3491 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: An experimental investigation is reported of optical transitions in narrow, symmetric, triangular well structures. Quantum wells as narrow as 2.5 nm have been grown in AlGaAs using an analog grading strategy in a conventional, solid source molecular beam epitaxy (MBE) system. Linearly graded heterostructures are analyzed in terms of Airy function solutions of the one-dimensional wave equation and energy levels more evenly spaced than in the equivalent square well are predicted. Transition energies obtained from photoluminescence, photoreflectance, and differential photoreflectance measurements agree well with calculated values. The differing spatial extents of wave functions in the triangular well case also modify the relative intensities of the lines identified, in particular the normally faint transition from n=3 heavy hole state to conduction-band ground state (hh3-e1) appears enhanced.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.350928
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  • 3
    Digitale Medien
    Digitale Medien
    Photoluminescence in delta-doped InGaAs/GaAs single quantum wells (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3896-3899 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have studied the time integrated (cw) and time resolved photoluminescence (PL) spectra of Si δ-doped In0.2Ga0.8As/GaAs quantum wells (QWs), in which the δ doping layer was either at the center of the quantum well or outside the well, in the barrier region. We found that both the cw and the time resolved PL depended significantly on the position of the doping sheet. When the doping was at the center of the quantum well the luminescence spectrum displayed the characteristic features of the Fermi edge singularity, while in the case of barrier-doped QW, the PL spectra showed well-defined emission lines originating from transitions between subbands in the conduction and valence bands. From low-temperature time resolved PL experiments, we determined the effective hole capture times, the interband relaxation times (for holes), and the radiative decay times for both types of δ doping. We found that the interband relaxation time in the center-doped QWs is nearly two orders of magnitude shorter (τ=3 ps) than in samples doped in the barrier (τ=200 ps). © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.372431
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  • 4
    Digitale Medien
    Digitale Medien
    Proton irradiation-induced intermixing in InGaAs/(Al)GaAs quantum wells and quantum-well lasers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6786-6789 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Proton irradiation with subsequent rapid thermal annealing was used to investigate intermixing of InGaAs/GaAs and InGaAs/AlGaAs quantum wells. Large photoluminescence (PL) energy shifts were observed in both materials. Comparatively, InGaAs/AlGaAs samples showed larger PL energy shifts than InGaAs/GaAs samples because of the presence of Al in the barriers and also better recovery of PL intensities, which is mainly due to dynamic annealing effects in AlGaAs during irradiation. Based on this, InGaAs/AlGaAs quantum-well lasers were fabricated and up to 49.3-nm-emission wavelength shift was observed in the proton-irradiated laser with no significant degradation in device characteristics. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.370291
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  • 5
    Digitale Medien
    Digitale Medien
    Dynamic NMR Conformational Studies of Ruthenium(II) Tetraazaporphyrinogen Complexes (1994)
    s.l. : American Chemical Society
    Inorganic chemistry 33 (1994), S. 4054-4061 
    Details
    ISSN: 1520-510X
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/ic00096a034
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  • 6
    Digitale Medien
    Digitale Medien
    Contactless electromodulation of excitons measured by photoluminescence (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1236-1238 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: An optical modulation technique has been used to observe the electromodulation of photoluminescence in single and multiple quantum wells. It is shown that this photomodulated photoluminescence technique can yield similar information to that obtained from electroabsorption and photoabsorption experiments but, because it does not require special sample geometry or sample preparation, it is easier to implement, especially in the case of samples grown on nontransparent substrates.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.356465
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  • 7
    Digitale Medien
    Digitale Medien
    Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown on nonplanar GaAs substrate (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5014-5020 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Effects of anodic oxide induced intermixing on the structural and optical properties of stacked GaAs quantum wire (QWR) structures grown on a sawtooth-type nonplanar GaAs substrate are investigated. Cross-sectional transmission electron microscope (XTEM) observation, temperature dependent photoluminescence (PL) and cathodoluminescence (CL) imaging were used. Intermixing was achieved by pulsed anodic oxidation of the GaAs cap layer and subsequent rapid thermal annealing, was verified by XTEM analysis. A significant enhancement of QWR PL is observed accompanied by a notable blueshift of the sidewall quantum well (SQWL) PL due to the intermixing. Furthermore, an extended necking region is observed after the intermixing by spatially resolved CL. The temperature dependence of the PL intensities of both SQWL and QWR show maxima at approximately T∼110 K indicating the role of the extended necking region in feeding carriers to SQWL and QWR. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363546
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  • 8
    Digitale Medien
    Digitale Medien
    Dynamics of photoexcited holes in n-doped InGaAs/GaAs single quantum well (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1849-1851 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have measured the temporal evolution of the photoluminescence (PL) of a Si δ-doped In0.2Ga0.8As/GaAs quantum wells using the PL up-conversion technique. The luminescence spectrum of this sample displayed the characteristic features of the Fermi edge singularity. The temporal evolution of the luminescence is described in terms of the dynamics of the hole population. From the experiments, we have determined the effective hole capture time (15 ps), the interband relaxation time (3 ps), and the radiative decay time (〉1 ns) at T=8 K. We have found that the radiative decay time decreases dramatically with increasing temperature (τr=45 ps at T=125 K) which, we believe, is the result of the smearing of the Fermi edge and the delocalization of the holes that are responsible for the luminescence. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.119419
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  • 9
    Digitale Medien
    Digitale Medien
    Growth of Si and C δ-doped nipi doping superlattices in GaAs by metal organic vapor phase epitaxy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4218-4220 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have optimized growth conditions of metal organic vapor phase epitaxy (MOVPE) in order to grow Si and C δ-doped nipi doping superlattices in GaAs. Trimethylaluminium (TMAl) and silane (SiH4) were used as p-type and n-type doping precursors, respectively. We report that at 630 °C, full compensation of free electrons and holes can be obtained in the MOVPE-grown Si and C δ-doped nipi doping superlattices over a very wide range of the sheet carrier densities (1012–1013 cm−2) by choosing proper TMAl flow rate and Si δ-doping time or SiH4 flow rate. The experimental results on electrical and optical characterization of Si and C δ-doped nipi doping superlattices in GaAs with 150 A(ring) thick undoped spacer layers are presented. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.116991
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  • 10
    Digitale Medien
    Digitale Medien
    Differential reflectance spectroscopy of GaAs/GaAlAs at elevated temperatures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1355-1357 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Differential reflectance (DR), a contactless optical modulation technique, has been used to study GaAs/AlGaAs quantum wells and bulk GaAs, over a wide temperature range (77〈T〈600 K). The objective of this study was to demonstrate that DR, unlike most optical modulation spectroscopies, can be effectively and effortlessly used at elevated temperatures, and, thus, provide considerable potential for in situ monitoring. We have used DR to measure the temperature dependence of several critical points of GaAs and AlxGa1−xAs (x=0.31). © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.117434
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