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InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy (2001)

Li, Y. F. ; Wang, J. Z. ; Ye, X. L. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 89 (2001), S. 4186-4188

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Self-assembled InAs quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on a (311)B InP substrate. Transmission electron microscopy clearly shows that a high density of smaller InAs islands can be obtained by using such a high index substrate. After introducing a lattice-matched underlying In0.52Al0.24Ga0.24As layer, the InAs QDs are much more uniform in size and form two-dimensional well ordered arrays. The photoluminescence (PL) spectra also confirm that the InAs QDs grown on underlying In0.52Al0.24Ga0.24As have a better quality than those grown in the In0.52Al0.48As matrix. A simple calculation indicates that the redshift of the PL peak energy mainly results from InAs QDs on underlying In0.52Al0.24Ga0.24As of large size. © 2001 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1350616

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