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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 100 (1994), S. 28-43 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Multiphoton ionization (MPI) time-of-flight mass spectroscopy (TOFMS) and photoelectron spectroscopy (PES) studies of UF6 are reported using focused light from the Nd:YAG laser fundamental (λ=1064 nm) and its harmonics (λ=532, 355, or 266 nm), as well as other wavelengths provided by a tunable dye laser. The MPI mass spectra are dominated by the singly and multiply charged uranium ions rather than by the UF+x fragment ions, even at the lowest laser power densities at which signal could be detected. In general, the doubly charged uranium ion (U2+) intensity is much greater than that of the singly charged uranium ion (U+). For the case of the tunable dye laser experiments, the Un+ (n=1–4) wavelength dependence is relatively unstructured and does not show observable resonance enhancement at known atomic uranium excitation wavelengths. The MPI-PES studies reveal only very slow electrons (≤0.5 eV) for all wavelengths investigated. The dominance of the U2+ ion, the absence or very small intensities of UF+x (x=1–3) fragments, the unstructured wavelength dependence, and the preponderance of slow electrons all indicate that mechanisms may exist other than ionization of bare U atoms following the stepwise photodissociation of F atoms from the parent molecule. The data also argue against stepwise photodissociation of UF+x (x=5,6) ions. Neither of the traditional MPI mechanisms ("neutral ladder'' or the "ionic ladder'') are believed to adequately describe the ionization phenomena observed. We propose that the multiphoton excitation of UF6 under these experimental conditions results in a highly excited molecule, superexcited UF6**. The excitation of highly excited UF6** is proposed to be facilitated by the well known "giant resonance,'' whose energy level lies in the range of 12–14 eV above that of ground state UF6. The highly excited molecule then primarily dissociates, via multiple channels, into Un+, UF+x, fluorine atoms, and "slow'' electrons, although dissociation into F− ions is not ruled out.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4186-4188 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-assembled InAs quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on a (311)B InP substrate. Transmission electron microscopy clearly shows that a high density of smaller InAs islands can be obtained by using such a high index substrate. After introducing a lattice-matched underlying In0.52Al0.24Ga0.24As layer, the InAs QDs are much more uniform in size and form two-dimensional well ordered arrays. The photoluminescence (PL) spectra also confirm that the InAs QDs grown on underlying In0.52Al0.24Ga0.24As have a better quality than those grown in the In0.52Al0.48As matrix. A simple calculation indicates that the redshift of the PL peak energy mainly results from InAs QDs on underlying In0.52Al0.24Ga0.24As of large size. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2048-2050 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of growth temperature on the optical properties of self-assembled In0.65Al0.35As/Al0.35Ga0.65As quantum dots is studied using photoluminescence and electroluminescence spectra. With the growth temperature increasing from 530 to 560 °C, the improvement of optical and structural quality has been observed. Furthermore, edge-emitting laser diodes with three stacked InAlAs quantum dot layers grown at different temperature are processed, respectively. For samples with quantum dots grown at 560 °C, the continuous wave operation is obtained up to 220 K, which is much higher than that of ones with InAlAs islands grown at 530 °C and that of the short-wavelength quantum-dot laser previously reported. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5433-5436 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The size and shape evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0 ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9 ML deposition on GaAs(100) substrate. Based on comparisons with the formation of large incoherent InAs islands on single-layer samples at late growth stage, the larger coherent InAs quantum dots at 2.9 ML deposition has been observed on the second InAs layer. A simple model analysis accounting for the surface strain distribution influenced by buried islands gives a stronger increment of critical QD diameter for dislocation nucleation on the second layer in comparison with the single-layer samples. Additionally, the inhibition of dislocation nucleation in InGaAs/GaAs large islands can also be explained by our theoretical results. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2529-2532 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-assembled InAs quantum dots are fabricated on a GaAs substrate by molecular beam epitaxy. The dots are covered by several monolayers of In0.2Ga0.8As before a GaAs cap layer and an in situ postgrowth annealing is performed to tune the emission to higher energy. The temperature dependence of photoluminescence from this structure demonstrates a slower redshift rate of the peak position, a gradual broadening of the linewidth and an abnormal enhancement of integrated intensity as the temperature is increased from 15 to 300 K. These phenomena are closely related to the introduction of an InGaAs layer and to the intermixing of In and Ga atoms during annealing. We propose a model to explain the unusual increase in PL intensity, which fits the experimental data well. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 951-958 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The mechanisms leading to laser multiphoton ionization and dissociation (MPI/MPD) of osmium tetroxide (OsO4) have been investigated from measurements of the kinetic energies of product ions (Os+, Os2+, OsO+, O2+, O+) and photoelectrons as a function of the laser wavelength. Neutral channels, intermediate to the dominant Os+ ionization channel, such as OsO4→OsO4−n+nO are examined using resonance-enhanced multiphoton ionization (REMPI) of the fast O atoms. Equipartition of the available photon energy among the fragments is observed. The wavelength dependence of the Os+ ion signal suggests that one or more of the steps leading to Os+ ions involve molecular ions and/or excited neutral atoms. The observed preponderance of very slow (〈0.2 eV) electrons also supports this interpretation. Os2+ is shown to result primarily from REMPI of Os+.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3741-3743 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-organized In0.55Al0.45As/Al0.50Ga0.50As quantum dots are grown by the Stranski–Krastanow growth mode using molecular beam epitaxy on the GaAs(311)A substrate. The optical properties of type-II InAlAs/AlGaAs quantum dots have been demonstrated by the excitation power and temperature dependence of photoluminescence spectra. A simple model accounting for the size-dependent band gap of quantum dots is given to qualitatively understand the formation of type-II In0.55Al0.45As/Al0.50Ga0.50As quantum dots driven by the quantum-confinement-induced Γ→X transition. The results provide new insights into the band structure of InAlAs/AlGaAs quantum dots. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1352-1354 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A transmission silica phase mask grating was used to fabricate LiNbO3 wafer phase gratings by a single excimer pulse at 248 nm. The morphologies of the LiNbO3 wafer gratings were studied with an atomic force microscope as well as an optical microscope. The crystal structures of the gratings were characterized by x-ray diffraction and three new crystal phases were found at the gratings' surface besides the substrate phase of LN (110). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 891-893 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The morphological and frictional characteristics of C60 adsorbed on silicon and mica surfaces have been investigated using atomic force microscopy (AFM). Deposition of fullerenes by vacuum sublimation results in uniform coverage of microcrystallites with an average size between 40 and 60 nm. Small area scans on the top of these microcrystallites show disordered arrangements of molecules. Frictional measurements carried out monitoring buckling of the AFM cantilever show increased friction for C60-covered surfaces over that of clean substrates. At sufficiently high forces, the film was selectively displaced by the AFM tip, so that fine patterns could be drawn on fullerene-covered surfaces.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 97 (1993), S. 2500-2504 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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