ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
By using the pulsed laser deposition technique, high-temperature superconducting YBa2Cu3O7−x (YBCO) films were grown on Si(001) with a 36 nm single-crystal 〈001〉 oriented CoSi2 buffer layer. The films, grown at a substrate temperature of ∼700 °C, have a metallic resistive temperature dependence with zero resistance at 85 K. X-ray diffraction, scanning electron microscopy, and ion channeling studies show that the YBCO films are polycrystalline but are strongly c-axis oriented normal to the Si substrate. Diffusion at the interface between the YBCO film and silicide buffer layer was minimized. This is essential to the growth of high-temperature superconducting films on Si substrates.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.104655
