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InGaAsP-InP Heterojunction Phototransistors and Light Amplifiers

Sasaki, Akio ; Kuzuhara, Masaaki

IOP Publishing ; 1981

In: Japanese Journal of Applied Physics Vol. 20, No. 4 ( 1981-04-01), p. L283-

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In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 20, No. 4 ( 1981-04-01), p. L283-

Kurzfassung: A very high optical gain (∼900) was obtained near the 1.1-µm wavelength by the InGaAsP-InP heterojunction phototransitor. The light amplifier, which is an integral device of a heterojunction phototransistor and a double-heterojunction laser (or light-emitting diode with confining layers), is presented. The optical bias method is described for the amplification of a weak incident light.

Materialart: Online-Ressource

ISSN: 0021-4922 , 1347-4065

URL: Article

DOI: 10.1143/JJAP.20.L283

RVK:

UA 4210.1

RVK:

UA 4210.2

RVK:

UA 4210

Sprache: Unbekannt

Verlag: IOP Publishing

Publikationsdatum: 1981

ZDB Id: 218223-3

ZDB Id: 797294-5

ZDB Id: 2006801-3

ZDB Id: 797295-7

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