In:
physica status solidi c, Wiley, Vol. 10, No. 11 ( 2013-11), p. 1405-1408
Abstract:
Temperature dependence of sheet electron density ( n s ) and mobility ( µ) of the two dimensional electron gas has been investigated in AlGaN/GaN hetero‐ structures deposited with different metal stacks such as Ti/Al, Ti/Au, V/Au, and Ni/Au. It was found that a sudden increase in n s and a hump in µ were observed with the temperature increase corresponding to the onset of reaction between the bottom metal (Ti, V, or Ni) and the AlGaN layer. At room temperature, Ti/Al showed an order of magnitude higher n s and 50% higher µ by annealing, while the amount of increase was much less for other metal stacks, indicating that Al played a key role for the increase in n s and µ . (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Type of Medium:
Online Resource
ISSN:
1862-6351
,
1610-1642
DOI:
10.1002/pssc.201300221
Language:
English
Publisher:
Wiley
Publication Date:
2013
detail.hit.zdb_id:
2105580-4
detail.hit.zdb_id:
2102966-0
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