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  • Articles  (1,410)
  • 2010-2014  (1,410)
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  • Articles  (1,410)
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  • 11
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    Characterization and residual stress analysis of TiN/TiCN films on AZ31 magnesium alloy by PVD (2014)
    Elsevier
    In: Vacuum
    Details
    Publication Date: 2014-12-13
    Description: Publication date: February 2015 Source: Vacuum, Volume 112 Author(s): Haitao Li , Qiang Wang , Minghui Zhuang , Junjie Wu TiN/TiCN films were prepared on AZ31 by physical vapor deposition. Structural features and residual stress were determined by X-ray fluorescence (XRF), scanning electron microscopy (SEM) and based on the grazing incidence X-ray diffraction (GIXRD), respectively. Results show that films have (111) preferred orientation. With a increasing of the reaction gas ratio, the C + N and Ti content increases first then decreases, and reach at the maximum value when the gas ratio is 15/5/3. Film have uniform thickness, and the hole shape defects appears in partial film and non-uniformly distribute on the surface of the film. The residual stress was tensile stress, and the residual tensile stress value decreased with the increase of the reaction gas ratio.
    Print ISSN: 0042-207X
    Electronic ISSN: 1879-2715
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
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  • 12
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    Metal-semiconductor transition in CuS-Cu1.8S mixed phase thin films (2014)
    Elsevier
    In: Vacuum
    Details
    Publication Date: 2014-12-13
    Description: Publication date: February 2015 Source: Vacuum, Volume 112 Author(s): Bing Ren , Lin Wang , Jian Huang , Ke Tang , Yimin Yang , Linjun Wang We report the semiconducting behavior at room temperature and a metal-semiconductor transition (MST) at lower temperature in copper sulfides (Cu x S) thin films. Cu x S thin films, deposited by direct magnetron sputtering technique, are found to be of CuS-Cu 1.8 S mixed phase by XRD. The deposited films exhibit low electrical resistivity close to ∼10 −4  Ω cm at room temperature and free-carrier absorption in the near infrared (NIR) region due to excess holes in the valence band. Temperature dependent resistivity measurements show the MST at ∼260 K, to the best of our knowledge, for the first time. The temperature dependent metal-semiconductor transition is attributed to the phase transition from Cu 1.8 S to CuS at T c during the cooling process. This work could help give insight into the transport characteristics as well as phase transition at lower temperature in copper sulfides thin films.
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    Electronic ISSN: 1879-2715
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
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  • 13
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    Fast crystallization of Mg-doped Sb4Te for phase change memory (2014)
    Elsevier
    In: Vacuum
    Details
    Publication Date: 2014-12-13
    Description: Publication date: February 2015 Source: Vacuum, Volume 112 Author(s): Xiang Shen , Junjian Li , Guoxiang Wang , Zhanshan Wang , Yegang Lu , Shixun Dai We prepared Mg-doped Sb 4 Te films and investigated their structural, electrical and optical properties. It was found that Mg could increase the crystallization temperature and improve the activation energy of crystallization as well as amorphous state stability of the Sb 4 Te film. Compared with Ge 2 Sb 2 Te 5 , the optimal composition of Mg 19.8 (Sb 4 Te) 80.2 exhibits a higher crystallization temperature (∼187 °C), and better data retention ability (keeping the amorphous state at 113.6 °C for ten years). Moreover, fast full crystallization (∼20 ns at a laser power of ∼60 mW) in the Mg 19.8 (Sb 4 Te) 80.2 film is confirmed, which is essential to achieve rapid data recording in phase change memory.
    Print ISSN: 0042-207X
    Electronic ISSN: 1879-2715
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
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  • 14
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    Investigation on white light emissions from CeO2/Dy2O3 multilayer films based on silicon substrates (2014)
    Elsevier
    In: Vacuum
    Details
    Publication Date: 2014-12-13
    Description: Publication date: February 2015 Source: Vacuum, Volume 112 Author(s): L. Li , S.W. Wang , G.Y. Mu , X. Yin , G.M. Wan , X.W. Zhang , W.B. Duan , L.X. Yi CeO 2 /Dy 2 O 3 multilayer films were deposited on Si substrates using electron-beam evaporation, and Dy 3+ ions were doped in CeO 2 after samples were annealed in weak reducing atmosphere at high temperature. White light emissions were observed from CeO 2 :Dy 3+ films. The luminescence properties of CeO 2 :Dy 3+ films were investigated by excitation, emission spectra and decay curves. In addition, the effects of Dy 3+ concentration and annealing temperature on photoluminescence intensity were conducted. In this paper, the color coordinates of samples with different Dy 3+ concentration were calculated and the results were presented in chromaticity diagram.
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    Electronic ISSN: 1879-2715
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
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  • 15
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    Three-step vacuum separation for treating arsenic sulphide residue (2014)
    Elsevier
    In: Vacuum
    Details
    Publication Date: 2014-12-13
    Description: Publication date: January 2015 Source: Vacuum, Volume 111 Author(s): Haijin Hu , Keqiang Qiu Up to now, most of arsenic sulphide residue can't be properly disposed. The traditional processes for treating arsenic sulphide residue have some widespread drawbacks such as the complex process, the high cost in operation, and the less than satisfactory removal effect and environmental protection. In view of this, a process of three-step vacuum separation was proposed for treating arsenic sulphide residue in this work. During vacuum separation, elemental sulphide and arsenic trioxide could be recovered effectively in primary distillation at temperature of 180 °C, distillation time of 2.0 h, corresponding to the residual gas pressure of 15 Pa. In secondary distillation, arsenic sulfide was obtained under the condition of 450 °C for 30 min, with a residual gas pressure of 15 Pa. When the temperature increased to 1000 °C for 2 h, lead sulfide was evaporated out in third distillation. Through the three-step vacuum separation, calcium fluoride was left behind in the third distilland, in which the content of arsenic was 5.65 × 10 −4  wt.%. Correspondingly, the removal rate of arsenic was almost 100%. The vacuum process is expected to be effectively employed for recycling valuable components from arsenic sulphide residue, and meanwhile eliminating its pollution.
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    Electronic ISSN: 1879-2715
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
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  • 16
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    Investigation on dispersive optical constants and microstructural parameters of the absorber CuSbS2 thin films (2014)
    Elsevier
    In: Vacuum
    Details
    Publication Date: 2014-12-13
    Description: Publication date: February 2015 Source: Vacuum, Volume 112 Author(s): A. Rabhi , Y. Fadhli , M. Kanzari In this work, the thermal annealing effects on the microstructural, optical constants and electrical properties of as-grown vacuum evaporated CuSbS 2 thin films have been investigated. The annealing temperatures in vacuum were varied in the range 100–220 °C. CuSbS 2 thin films were deposited on heated glass substrates. These films were characterized for their structural, optical and electrical properties using X-ray diffraction (XRD), optical measurement and hot probe method. The lattice parameters, crystal strain ɛ and dislocation density δ are calculated. The optical constants of the elaborated films were determined, in the spectral range 300–1800 nm. The values of the optical band gap energy ranged between 1.39 and 1.75 eV. The dispersion of the refractive index and extinction coefficient in the infrared region are adequately explained using a single oscillator model. The different values of the dispersion energy E d , the oscillator energy E 0 , the high frequency dielectric constant ε ∞ and the ratio of the carrier concentration to the effective mass were estimated according to the models of Spitzer-Fan and Wemple _ DiDomenico. The electrical conductivity measurements suggest that obtained films show ‘mineral materials’ behavior with conductivity of 10 −4  Ω −1  cm −1 . The annealed layers exhibit an obvious p _ type semiconductor.
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
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  • 17
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    Characterization and Analysis of Infrared Imaging Diagnostics for Intense Pulsed Ion and Electron Beams (2014)
    Elsevier
    In: Vacuum
    Details
    Publication Date: 2014-12-13
    Description: Publication date: Available online 10 December 2014 Source: Vacuum Author(s): Xiao Yu , Jie Shen , Miao Qu , Wenbin Liu , Haowen Zhong , Jie Zhang , Yanyan Zhang , Sha Yan , Gaolong Zhang , Xiaofu Zhang , Xiaoyun Le A two-dimensional calorimetric diagnostic technique with infrared imaging method has been developed. The technique, which enables the measuring of two-dimensional energy density distribution of intense pulsed ion beam (IPIB) and intense pulsed electron beam (IPEB) with particle energy typically of hundreds of keV, is applicable for the diagnostics of IPIB and IPEB for material treatment purpose such as fast quenching, surface melt coating, etc. Testing of the technique has been carried out with IPIB on pulsed ion beam accelerator BIPPAB-450. The maximum ion energy was 450 keV, the density of the ion current was 150A/cm 2 , and the pulse duration (at half height) was 80ns. The results showed that the technique can achieve surface energy density sensitivity of 0.1J/cm 2 and spatial resolution of 1mm. Also, the validity and precision of the method was checked by establishing a modeling based on Fourier’s Law with Finite Element Method (FEM). The applicability and principles of the technique for IPIB and IPEB was also discussed reasonably.
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
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  • 18
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    TiN films deposition inside stainless-steel tubes using magnetic field-enhanced arc ion plating (2014)
    Elsevier
    In: Vacuum
    Details
    Publication Date: 2014-12-13
    Description: Publication date: February 2015 Source: Vacuum, Volume 112 Author(s): Yanhui Zhao , Chaoqian Guo , Wenjin Yang , Yuqiu Chen , Baohai Yu A magnetic field-enhanced arc ion plating (MFE-AIP) is utilized to deposit TiN films on the inner wall of a stainless-steel tube with inner diameter 36 mm and length from 108 to 288 mm. Three groups of magnetic field coils are designed and located at different positions, to produce axial magnetic field to focus and to guide the arc plasma beam to spread along the center axial direction of the tubular workpiece. Samples of AISI 304 stainless steel are horizontally placed inside the tube to investigate the structure and performance of the films. A pulse bias is applied to the substrate to accelerate the plasma. The structure, surface morphology, cross-sectional image, hardness and wear-resistant properties as a function of the position inside the tubes are investigated by X-ray diffraction (XRD), scanning electron microscope (SEM), nanoindenter, friction-tester, respectively. The results show that the film structures change from a single TiN phase into mixed phases of TiN and Ti 2 N with the increase in the distance to the tube entrance. The thickness, hardness and sliding friction coefficient of the films decrease with the increase in the distance to the tube entrance. The magnetic field-enhanced arc ion plating is shown to be an effective tool to treat the inner surface of stainless-steel tubes.
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
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  • 19
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    Ge/NiGe bilayer applied for the recording film of write-once blu-ray disc (2014)
    Elsevier
    In: Vacuum
    Details
    Publication Date: 2014-12-13
    Description: Publication date: Available online 9 December 2014 Source: Vacuum Author(s): Sin-Liang Ou , Sheng-Chi Chen , Yan-Cheng Lin , Tsung-Yen Kuo , Chao-Kuang Wen In this study, the Ge/NiGe (3 nm/16 nm) bilayer was deposited by sputtering at room temperature to serve as the recording film for write-once blu-ray disc. The thermal properties, optical characteristics, crystallization mechanisms and recording performance were all investigated in detail. The composition of the NiGe alloy layer was maintained at Ni 50 Ge 50 . Based on the results of reflectivity-temperature measurements, it can be observed that the Ge/NiGe bilayer had two temperature ranges of reflectivity increment, i.e. 170-216 °C and 340-352 °C. Microstructural analysis revealed that the NiGe nano-crystalline phase was generated in the as-deposited state. After annealing at 250 °C, the crystallinity of the NiGe phase was improved. Upon further increasing the annealing temperature to 370 °C, the Ge crystallization appeared in this bilayer. Dynamic tests indicate that the blu-ray disc fabricated with the Ge/NiGe recording layer possesses optimum jitter values of 6.4% and 7.1% at 1× and 4× writing speeds, respectively. This implies that the Ge/NiGe bilayer has high potential for write-once blue laser recording applications.
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
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  • 20
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    Benefits of the controlled reactive high-power impulse magnetron sputtering of stoichiometric ZrO2 films (2014)
    Elsevier
    In: Vacuum
    Details
    Publication Date: 2014-12-13
    Description: Publication date: Available online 10 December 2014 Source: Vacuum Author(s): J. Vlček , J. Rezek , J. Houška , T. Kozák , J. Kohout High-power impulse magnetron sputtering with a pulsed reactive gas (oxygen) flow control was used for high-rate reactive depositions of densified, highly optically transparent, stoichiometric ZrO 2 films onto floating substrates. The depositions were performed using a strongly unbalanced magnetron with a directly water-cooled planar Zr target of 100 mm diameter in argon-oxygen gas mixtures at the argon pressure of 2 Pa. The repetition frequency was 500 Hz at the deposition-averaged target power density from 5 Wcm -2 to 53 Wcm -2 . The voltage pulse durations ranged from 50 μs to 200 μs. The target-to-substrate distance was 100 mm. An optimized location of the oxygen gas inlets in front of the target and their orientation toward the substrate made it possible to improve the quality of the films due to minimized arcing at the sputtered target and to enhance their deposition rates up to 120 nm/min at the deposition-averaged target power density of 52 Wcm -2 , a voltage pulse duration of 200 μs and a substrate temperature less than 120 °C. The films exhibited a hardness of 16 GPa, a refractive index of 2.19 and an extinction coefficient of 2×10 -3 (both at the wavelength of 550 nm). Under these optimized conditions, we measured the highest (Zr + + Zr 2+ ) and (O 2 + + O + ) ion fractions in the total fluxes of positive ions, and a low population of high-energy O - ions at the substrate position.
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
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