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1

Digitale Medien

Deep levels in uniformly Si doped GaAs/AlxGa1−xAs quantum wells and superlattices (1996)

Jia, Y. B. ; Han, Z. Y. ; Grimmeiss, H. G. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 80 (1996), S. 2860-2865

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Uniformly Si doped GaAs/Al0.33Ga0.67As multilayer structures have been studied by deep level transient spectroscopy (DLTS) and photocapacitance measurements. DLTS spectra showed five peaks which are related to defects in the GaAs layers. The concentration of these defects decreased with increasing layer thickness. An additional peak, which has been observed with forward bias filling pulses, is suggested to be related to defects near the surface, most probably due to defect accumulation in multilayers. Their emission and capture properties as well as photoionization cross sections have been studied. Evidence is provided that the emission and filling processes of these deep levels are modified due to the energy quantization in the conduction band and the carrier transport through the quantum structures. No DX center related DLTS peaks or other features like persistent photoconductivity effects have been observed in any of our samples. © 1996 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.363137

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2

Digitale Medien

Photoexcited states of DX centers in Si doped AlxGa1−xAs (1996)

Jia, Y. B. ; Grimmeiss, H. G.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 80 (1996), S. 3493-3503

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Deep level transient spectroscopy (DLTS) and single shot capacitance techniques were used to investigate Si doped AlxGa1−xAs with Al compositions ranging from 0.30 to 0.59. Under illumination, an additional DLTS peak was observed in samples with Al compositions close to x=0.38. This peak has been shown to originate from a localized state with an energy level shallower than the DX ground state and energy barriers for both electron emission and capture processes. Persistent photoconductivity effects related to this state were observed below 50 K. Evidence is provided that this state is a metastable state of the Si donor. Its origin is discussed in terms of the intermediate state of a negative U DX center and a metastable negative U configuration of the Si donor. A further photoinduced DLTS peak was observed within a narrow Al composition range that has been identified as the shallowest DX level of the four distinct DX levels originating from different local environments of the donors. © 1996 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.363637

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3

Digitale Medien

Effect of bias annealing on Au/n-Si Schottky barrier with hydrogen incorporation (1994)

Yuan, M. H. ; Jia, Y. Q. ; Qin, G. G.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 76 (1994), S. 5592-5594

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The Au/n-Si Schottky barrier (SB) which contains hydrogen has a 0.10 eV lower SB height (SBH) than that without hydrogen. For the hydrogen-containing SB, zero bias annealing (ZBA) decreases the SBH while reverse bias annealing (RBA) increases it. In addition, ZBA and RBA cycling experiments have been made which reveal a reversible change of the SBH within at least four cycles. The annealing temperature of ZBA and especially of RBA influences the SBH. We interpret the above effect in terms of an interaction between hydrogen and metal-semiconductor interface states.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.357163

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4

Digitale Medien

Effects of sample size and field orientation on pseudo-Hall voltage in micronscale nickel thin-film squares : The 41st annual conference on magnetism and magnetic materials (1997)

Jia, Y. Q. ; Kong, Linshu ; Shi, Rick C. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 81 (1997), S. 5475-5477

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Pseudo-Hall effect (PHE) in Ni thin-film squares of 1–5 μm size is measured with a constant current through two leads along one diagonal of the square and the voltage output from leads along the other diagonal. The PHE voltage in response to an in-plane magnetic field depends on the square size and field orientation. The minimum PHE voltage at low field is close to zero only with the 2 μm square containing four symmetrical closure domains leading to a 600% relative change in PHE voltage. The PHE signal is found the largest when the field direction is along the square side while the smallest when along the square diagonal. © 1997 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.364631

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5

Digitale Medien

Deep acceptorlike states in Si doped molecular-beam-epitaxial-grown AlxGa1−xAs (1996)

Jia, Y. B. ; Grimmeiss, H. G. ; Dobaczewski, L.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 80 (1996), S. 859-863

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Acceptorlike states with energy levels in the lower part of the band gap have been observed by photocapacitance measurements in Si-doped molecular-beam-epitaxial-grown AlxGa1−xAs (x=0.30–0.59). The microscopic structure of these defects is still unclear. Their concentration, however, can exceed the net donor concentration. The energy positions of the acceptorlike states as well as their photoionization cross sections of holes and electrons have been studied for different x. Due to their large concentration, these states may disturb experiments performed on DX centers which are often assumed to be the main electronic levels in these materials. © 1996 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.363554

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6

Digitale Medien

Deep levels in nitrogen-implanted n-type GaAs (1995)

Chen, K. M. ; Jia, Y. Q. ; Chen, Y. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 78 (1995), S. 4261-4263

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Ti/n-GaAs Schottky barrier diodes were prepared on nitrogen-implanted n GaAs. The Schottky barrier height of the diodes was found to be 0.96 eV, 0.12 eV higher than that of the samples without N implantation. Four distinctive electron traps E1(0.111), E2(0.234), E3(0.415), and E4(0.669) and one hole trap, H(0.545), have been observed with deep level transient spectroscopy. Defect models of these deep levels are proposed and the role of H(0.545) in the Schottky barrier formation is also discussed. © 1995 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.359889

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7

Digitale Medien

Metastable states of Si donors in AlxGa1−xAs (1996)

Jia, Y. B. ; Grimmeiss, H. G.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 80 (1996), S. 4395-4399

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Donor related states in Si-doped AlGaAs with Al compositions ranging from 0.30 to 0.59 were investigated by capacitance measurements. In addition to the stable Si-DX state, two metastable states of the silicon donor were observed. Of the two metastable states, the shallower one is attributed to the X-conduction band related effective mass state arising from substitutional silicon on the group III site. The deeper one is proposed to be related to a donor configuration different from both the substitutional configuration and that of the DX state. © 1996 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.363399

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8

Digitale Medien

High-density crystalline quantum dots in blue emitting porous silicon (1997)

Chen, Qianwang ; Li, X.-J. ; Zhou, G. E. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 81 (1997), S. 7970-7972

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We report on the results of small angle x-ray scattering and high resolution electron micrograph studies which reveal the structure of hydrothermally prepared porous silicon that emits blue light under photoexcitation. Our results constitute direct evidence that blue photoluminescence porous silicon includes high density silicon quantum dots. We show that these quantum dots are isolatedly dispersed in each amorphous SiO2 linear column standing freely on the silicon substrate. The size of individual quantum dots is about 2 nm. © 1997 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.365399

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9

Digitale Medien

Discovery of a new photoinduced electron trap state shallower than the DX center in Si doped AlxGa1−xAs (1989)

Jia, Y. B. ; Li, M. F. ; Zhou, J. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 66 (1989), S. 5632-5634

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We have found a new electron trap state in Si-doped AlxGa1−xAs by deep level transient spectroscopy and constant temperature capacitance transient measurements under strong light illumination. This new trap is shallower than the DX center associated with Si impurity in that its emission and capture activation energies are equal to 0.20±0.05 and 0.17±0.05 eV, respectively. Its maximum concentration is comparable to the concentration of the DX center. Possible origins of this new trap and its relationship to the DX center are discussed.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.343672

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10

Digitale Medien

Characterization of stain etched porous Si with photoluminescence, electron paramagnetic resonance, and infrared absorption spectroscopy (1993)

Jia, Y. Q. ; Zhang, L. Z. ; Fu, J. S. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 74 (1993), S. 7615-7617

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Porous Si (PS) layers are prepared by stain etching in a HF/NaNO2 solution on both p- and n-type crystal Si substrates, and are characterized by photoluminescence (PL), electron paramagnetic resonance (EPR), and infrared absorption (IR) spectroscopy. The PL spectra under 488 nm laser excitation exhibit a strong peak at 680–720 nm for various samples of different substrate parameters and remain stable upon aging in air or γ irradiation; as-etched (∼20 min in air before measurement) and aged (for up to six months) samples show no detectable EPR signal but the γ-irradiated samples show an isotropic g=2.006 signal of peak-to-peak linewidth of 1.1 mT supporting an amorphous Si structure; the IR spectra show both hydrogen and oxygen related IR modes in the as-etched samples and the former decreases with aging time in air while the latter increases. Comparing our results with those of anodically etched PS samples we conclude that: (1) the PL peak position of the stain PS seems to be unique and stable as compared with that of the anodic PS varying in 620–830 nm; (2) the isotropic EPR signal of the stain PS reflects no crystallinity, in contrast with the anisotropic signal of the anodic PS; and (3) obvious oxidation in the as-etched stain PS is also in contrast with the nonobservation of oxygen-related IR modes in the as-etched anodic PS. We discuss the results in terms of structural properties and PL mechanism of PS.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.354940

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