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  • 1
    Electronic Resource
    Electronic Resource
    High frequency characterisation of double drift region InP and GaAs diodes (1989)
    Springer
    Applied physics 48 (1989), S. 437-443 
    Details
    ISSN: 1432-0630
    Keywords: 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Computer studies have been made on the high frequency characteristics of symmetrically doped flat profile double drift region (DDR) InP and GaAs impatts in the mm-wave (60–100 GHz) frequency band. The spatial distribution of high frequency negative resistance and reactance in the depletion layer of DDR devices and their admittance properties have been investigated. The results indicate that DDR InP impatts should have higher drift zone voltage drop, higher negative resistance and higher negative conductance compared to their GaAs counterparts designed for the same range of mm-wave frequencies. Furthermore, the negative resistance peak is larger in magnitude for InP impatts compared to that for GaAs impatts. It is thus observed that DDR InP impatts should be superior to their GaAs counterparts as regards mm-wave power generation with high conversion efficiency.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00619715
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Studies on the high-frequency properties of 〈111〉, 〈110〉 and 〈100〉 oriented GaAs IMPATT diodes (1993)
    Springer
    Applied physics 56 (1993), S. 375-380 
    Details
    ISSN: 1432-0630
    Keywords: 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract High-frequency analysis has been carried out to predict the rf performance of 〈111〉, 〈110〉 and 〈100〉 oriented p + nn +, n + pp + (single drift region) and n + npp + (double drift region) GaAs IMPATT diodes for opertion at 35 and 60 GHz. The microwave performance is observed to be highly sensitive to crystal orientation in case of p + nn + and n + npp + diodes whereas orientation of the substrate has negligible effect on n + pp + avalanche diodes. The calculation shows that 〈111〉 oriented GaAs IMPATT diode would provide the largest magnitude of negative resistance and negative conductance for both SDR p + nn + and DDR n + npp + diodes which indicates that high microwave power with high conversion efficiency can be realised from these 〈111〉 oriented GaAs devices. This result can be explained from the experimental data of electron and hole ionization rates for different orientations in GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324358
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Computer studies on the space charge dependence of avalanche zone width and conversion efficiency, of single driftp +nn+ andn +pp+ indium phosphide impatts (1984)
    Springer
    Applied physics 35 (1984), S. 125-129 
    Details
    ISSN: 1432-0630
    Keywords: 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The effect of mobile space charge on avalanche zone width and conversion efficiency of single drift region (SDR) indium phosphide impatts at 12 and 60 GHz has been investigated. The results show thatp +nn+ InP diodes have a narrower avalanche zone and a higher conversion efficiency compared ton +pp+ diodes for both the frequencies at normal operating current densities. The expansion of avalanche zone and efficiency degradation at high current levels are more pronounced inp +nn+ at 12 GHz and inn +pp+ at 60 GHz.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620642
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Computer simulation of the small-signal admittance and negative resistance of double avalanche region IMPATT diodes (1993)
    Springer
    Applied physics 56 (1993), S. 575-580 
    Details
    ISSN: 1432-0630
    Keywords: 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A generalized small-signal computer simulation of double avalanche region (DAR) n +-p-v-n-p + Si and InP IMPATT diodes has been carried out for different frequencies and current densities taking both drift and diffusion of charge carriers into account. The simulation results show that both symmetrically and asymmetrically doped devices based on Si and InP exhibit discrete negative conductance frequency bands separated by positive conductance frequency bands. The magnitudes of both negative conductance and negative resistance of InP devices are larger than those of Si devices in case of symmetrical and asymmetrical diodes. Further, the negative resistance profiles in the depletion layer of these diodes exhibit a single peak in the middle of the drift layer in contrast to double peaks in double drift region diodes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331408
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    Paper (German National Licenses)
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