ISSN:
1432-0630
Schlagwort(e):
85.30
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Maschinenbau
,
Physik
Notizen:
Abstract High-frequency analysis has been carried out to predict the rf performance of 〈111〉, 〈110〉 and 〈100〉 oriented p + nn +, n + pp + (single drift region) and n + npp + (double drift region) GaAs IMPATT diodes for opertion at 35 and 60 GHz. The microwave performance is observed to be highly sensitive to crystal orientation in case of p + nn + and n + npp + diodes whereas orientation of the substrate has negligible effect on n + pp + avalanche diodes. The calculation shows that 〈111〉 oriented GaAs IMPATT diode would provide the largest magnitude of negative resistance and negative conductance for both SDR p + nn + and DDR n + npp + diodes which indicates that high microwave power with high conversion efficiency can be realised from these 〈111〉 oriented GaAs devices. This result can be explained from the experimental data of electron and hole ionization rates for different orientations in GaAs.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1007/BF00324358
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