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  • 1
    Digitale Medien
    Digitale Medien
    Ion mixing and thermochemical properties of markers in Cu (1986)
    Springer
    Applied physics 41 (1986), S. 171-174 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 61.80 ; 66.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Markers of Nb, Ru, Ag, In, Sb, Hf, Pt, Au, and Bi in Cu were mixed by irradiation with 750 keV Kr at 77 K and analyzed in situ by backscattering of 1.9 MeV He+. Cu with Pt and Au markers were also irradiated and analyzed at 7 K. The results were identical to those obtained at 77 K results. The measured mixing efficienciesDt/øF D , for the various markers correlate with their respective impurity tracer diffusivities and impurity-vacancy binding energies in Cu. The correlation suggests that diffusion by a vacancy mechanism during a thermal spike as an important process in ion mixing of marker atoms in Cu.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00616835
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Experimental evidence for Coulomb charging effects in submicron Bi-2212 stacks (1999)
    Springer
    JETP letters 69 (1999), S. 84-90 
    Details
    ISSN: 1090-6487
    Schlagwort(e): 85.25.Cp ; 74.50.+r
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract Focused ion beam (FIB) and ion milling techniques are developed for the fabrication of Bi2Sr2CaCu2O8+1d (Bi-2212) stacked junctions with in-plane size L ab ranging from several microns down to the submicron scale without degradation of superconducting transition temperature T c. It is found that the behavior of submicron junctions (L ab〈1 µm) is quite different from that of larger ones. The critical current density is considerably suppressed, the hysteresis and multibranched structure of the current-voltage (I-V) characteristics are eliminated, and a periodic structure of current peaks appears reproducibly on the I-V curves at low temperatures. The period ΔV of the structure is consistent with the Coulomb charging energy of a single pair, ΔV=e/C, where C is the effective capacitance of the stack. It is considered that this behavior originates from the Coulomb blockade of the intrinsic Josephson tunneling in submicron Bi-2212 stacks.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.567988
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    Erratum: Experimental evidence for Coulomb charging effects in submicron Bi-2212 stacks [JETP Lett. 69, No. 1 84–90 (10 January 1999)] (1999)
    Springer
    JETP letters 69 (1999), S. 640-643 
    Details
    ISSN: 1090-6487
    Schlagwort(e): 85.25.Cp ; 74.50.+r ; 99.10.+g
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.567973
    Standort Signatur Einschränkungen Verfügbarkeit
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