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  • American Institute of Physics (AIP)  (1)
  • Copernicus Publications (EGU)  (1)
Publikationsart
Erscheinungszeitraum
  • 1
    Publikationsdatum: 2023-02-08
    Beschreibung: A compilation of the published literature on dust content in terrestrial and marine sediment cores was synchronized with pollen data and speleothem growth phases on the Greenland Ice Core Chronology 2005 (GICC05) time axis. Aridity patterns for eight key areas of the global climate system have been reconstructed for the last 60 000 years. These records have different time resolutions and different dating methods, i.e. different types of stratigraphy. Nevertheless, all regions analysed in this study show humid conditions during early Marine Isotope Stage 3 (MIS3) and the early Holocene or deglaciation, but not always at the same time. Such discrepancies have been interpreted as regional effects, although stratigraphic uncertainties may affect some of the proposed interpretations. In comparison, most of the MIS2 interval becomes arid in all of the Northern Hemisphere records, but the peak arid conditions of the Last Glacial Maximum (LGM) and Heinrich event 1 differ in duration and intensity among regions. In addition, we also compare the aridity synthesis with modelling results using a global climate model (GCM). Indeed, geological archives and GCMs show agreement on the aridity pattern for the Holocene or deglaciation, for the LGM and for late MIS3.
    Materialart: Article , PeerReviewed
    Format: text
    Format: archive
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 2
    Publikationsdatum: 2015-07-18
    Beschreibung: We investigate surface passivation effects of SiN x films deposited by inductive coupled plasma chemical vapor deposition (ICPCVD) and plasma enhanced chemical vapor deposition (PECVD) technologies for InAlAs/InGaAs/InP photo-detectors. It is found that ICPCVD deposited SiN x film effectively reduces the densities of the interface states and slow traps near SiN x /InAlAs interface, which realize the small surface recombination velocity and low surface current for InAlAs/InGaAs/InP photo-detectors. By comparing C-V and XPS results, it is suggested that the trap density reduction by ICPCVD technology could be attributed to the disorder suppression on InAlAs surface due to the high density of SiN x film and less processing energy to the InAlAs surface.
    Print ISSN: 0021-8979
    Digitale ISSN: 1089-7550
    Thema: Physik
    Standort Signatur Einschränkungen Verfügbarkeit
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