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  • 1
    Electronic Resource
    Electronic Resource
    Influence of interfacial contamination on the structure and barrier height of Cr/GaAs Schottky contacts (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 356-358 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of as-deposited and annealed Cr/GaAs Schottky contacts was investigated by high resolution and analytical electron microscopy. The Schottky barrier height for contacts prepared by cleavage and in situ metallization in ultrahigh vacuum was stable upon annealing up to 370 °C in N2. In contrast, the contacts prepared on air-exposed substrates show an increase of the barrier height by 80 meV during annealing in the same range of temperatures. Comparing these two types of contacts, distinct differences in the grain size, presence of an oxide layer at the interface, and change in stoichiometry in the substrate beneath the contact were detected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100968
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  • 2
    Electronic Resource
    Electronic Resource
    Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperatures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1881-1883 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs layers grown by molecular beam epitaxy (MBE) at substrate temperatures between 200 and 300 °C were studied using transmission electron microscopy (TEM), x-ray diffraction, and electron paramagnetic resonance (EPR) techniques. High-resolution TEM cross-sectional images showed a high degree of crystalline perfection of these layers. For a layer grown at 200 °C and unannealed, x-ray diffraction revealed a 0.1% increase in the lattice parameter in comparison with bulk GaAs. For the same layer, EPR detected arsenic antisite defects with a concentration as high as 5×1018 cm−3. This is the first observation of antisite defects in MBE-grown GaAs. These results are related to off-stoichiometric, strongly As-rich growth, possible only at such low temperatures. These findings are of relevance to the specific electrical properties of low-temperature MBE-grown GaAs layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101229
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  • 3
    Electronic Resource
    Electronic Resource
    Morphological transition of InAs islands on GaAs(001) upon deposition of a GaAs capping layer (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1677-1679 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interaction between a GaAs cap and InAs islands grown on vicinal GaAs(001) has been studied by transmission electron microscopy and atomic force microscopy. Samples were prepared by molecular beam epitaxy at 480 °C. Upon GaAs cap deposition, it was found that the previously grown InAs islands undergo a novel type of morphological transition, i.e., a transition from disk-shaped to ring-shaped islands. InAs becomes depleted or entirely absent in the central area of what had been a disk-shaped InAs island. The GaAs cap was also shown to be virtually absent within the same central region, resulting in the formation of crater-like surface depressions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112883
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  • 4
    Electronic Resource
    Electronic Resource
    Schottky barrier instabilities due to contamination (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 145-147 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We reported here a systematic study of the annealing-induced changes in the barrier height of Schottky barrier diodes fabricated on atomically clean and contaminated surfaces. Al, Ag, Au, and Cr/GaAs(110) diodes were fabricated by in situ deposition on clean n-type GaAs(110) surfaces prepared by cleavage in ultrahigh vacuum and on contaminated surfaces prepared by cleavage and exposure to the atmosphere for ∼1–2 h. This study demonstrates that the as-deposited barrier height and the annealing-induced changes in the barrier height of diodes formed with an interfacial layer of contamination are distinctly different from the characteristics of diodes formed on clean semiconductor surfaces. The presence of an interfacial layer of contamination is found to significantly degrade the stability of the diode's barrier height to annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100351
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  • 5
    Electronic Resource
    Electronic Resource
    Polish-induced damage in 〈100〉 GaAs: A comparison of transmission electron microscopy and Raman spectroscopy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4363-4365 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This communication presents a comparative study of polish-induced effects in 〈100〉 GaAs by Raman spectroscopy (strain) and cross-sectional transmission electron microscopy (dislocation density). It is found that the depth and polish-time dependence of both the strain and dislocation density obey the same relationship. However, the skin depth evaluated by Raman scattering is a factor of 10 smaller than that determined from transmission electron microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344928
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  • 6
    Electronic Resource
    Electronic Resource
    Mechanism for nearly ohmic behavior in annealed Au/n-GaAs Schottky diodes (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 711-715 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The origin of the ohmic behavior observed after annealing Au/n-GaAs {110} Schottky diodes was investigated by electron-beam-induced current (EBIC) measurements of diode plan views and cross sections, combined with standard scanning electron microscopy and transmission electron microscopy techniques. The large leakage currents responsible for this behavior arise at the periphery of the deposited gold films, where elongated gold crystallites which lie on the GaAs surface are observed after heat treatment. These crystallites are typically 2–5 μm long, 500–2000 A(ring) wide, and are crystallographically oriented along the GaAs [110] direction. EBIC imaging demonstrated that a space-charge region was present under the peripheral area showing the gold crystallites. Comparison of current collection as measured with EBIC between annealed and unannealed diodes shows a large reduction in current collection under and around the periphery of the annealed diodes. These data allow attribution of the ohmic behavior to a recombination current. Experiments done with overlapping Au evaporations show that recombination on the bare GaAs surface between the observed crystallites surrounding each annealed diode is the main component of this recombination current, and thus of the large leakage current.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343543
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  • 7
    Electronic Resource
    Electronic Resource
    Measurements of direct drive laser imprint in thin foils by radiography using an x-ray laser backlighter : The 38th annual meeting of the Division of Plasma Physics (DPP) of the American Physical Society (1997)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 4 (1997), S. 1985-1993 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In direct drive inertial confinement fusion, the residual speckle pattern remaining after beam smoothing plays an important role in the seeding of instabilities at the ablation front. An x-ray laser is used as an extreme ultraviolet backlighter to characterize the imprinted modulation in thin foils for smoothing by random phase plate and by spectral dispersion for both 0.35 and 0.53 μm irradiation, and by induced spatial incoherence for 0.53 μm irradiation. Measurements of the imprinted modulation due to a single optical mode generated by two beam interference, and modification of the imprint with a superposed smooth irradiation to study time dependence of the imprinting process are demonstrated. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872340
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  • 8
    Electronic Resource
    Electronic Resource
    Extreme ultraviolet probing of laser imprint in a thin foil using an x-ray laser backlighter : Proceedings of the eleventh topical conference on high temperature plasma diagnostics (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 802-805 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: For direct drive inertial confinement fusion, a capsule is imploded by directly illuminating the surface with laser light. Beam smoothing and uniformity of illumination affect the seeding of instabilities at the ablation front. We have developed a technique for studying the imprint of a laser beam on a thin foil using an x-ray laser as an extreme ultraviolet (XUV) backlighter. We use multilayer XUV optics to relay the x-ray laser onto the directly driven foil, and then to image the foil modulation onto a charged coupled device camera. This technique allows us to measure small fractional variations in the foil thickness. We have measured the modulation due to imprint from a low intensity 0.35 μm drive beam incident on a 3 μm Si foil using an yttrium x-ray laser on Nova. We present results from a similar technique to measure the imprinted modulation due to a low intensity 0.53 μm drive beam incident on a 2 μm Al foil using a germanium x-ray laser at the Vulcan facility. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147747
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  • 9
    Electronic Resource
    Electronic Resource
    X-ray laser radiography of perturbations due to imprint of laser speckle in 0.35 μm laser irradiation of a thin Si foil (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 781-785 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A gain saturated yttrium x-ray laser operating at a wavelength of 15.5 nm has been used as an extreme ultraviolet probe to measure optical depth modulations in a thin Si foil by face-on radiography. The high brightness of this Ne-like x-ray laser allows probing of a sample with a high opacity. This technique is sensitive to very small modulations in the optical depth of the foil, corresponding to thickness variations of a few 10 nm of cold material. This technique is used to measure the effect of direct drive laser imprint on a thin Si foil by face-on radiography using multilayer optics to image the foil with 26× magnification. We have recorded modulations in a thin Si foil that was irradiated by a 400 ps, 0.35 μm beam at an intensity of about 3×1012 W/cm2. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146809
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  • 10
    Electronic Resource
    Electronic Resource
    Aging of Schottky diodes formed on air-exposed and atomically clean GaAs surfaces: An electrical study (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2006-2010 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this report we show that the application of a large voltage and current stress can significantly change the barrier height of a given metal (Ag,Al,Au,Pd,Cr)/GaAs(110) contact. These changes of barrier height depend on the metal used, the method of fabrication of the diode (air exposed or UHV cleaved), and the intensity and direction of the potential and current during the electrical aging. In particular, the air-exposed Ag diodes exhibit the largest change in the barrier height (∼85 meV) upon aging, while the UHV-cleaved Ag diodes do not exhibit a significant change. In the case of Au, both UHV-cleaved and air-exposed diodes show a small change (∼20 meV). The barrier heights of Pd, Al, and Cr air-exposed diodes do not exhibit an appreciable change upon aging (i.e., 〈10 meV). The changes in barrier height are found to have a very consistent and characteristic logarithmic dependence upon time. Once the electrical aging is stopped, the barrier height is found to recover to near the unaged value. The long time constant of the aging process, the ability of the barrier height to recover after aging, the long time constant of the recovery process, and the acceleration of the recovery process by illumination suggest that the changes in the barrier height which occur upon electrical aging are due to the creation and/or annihilation of deep level traps near the interface. We also report a systematic study of a comparison of barrier height determinations for Ag, Al, Au, Cr, and Pd diodes formed on air-exposed and UHV-cleaved GaAs(110) surfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341178
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