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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4363-4365 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This communication presents a comparative study of polish-induced effects in 〈100〉 GaAs by Raman spectroscopy (strain) and cross-sectional transmission electron microscopy (dislocation density). It is found that the depth and polish-time dependence of both the strain and dislocation density obey the same relationship. However, the skin depth evaluated by Raman scattering is a factor of 10 smaller than that determined from transmission electron microscopy.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2507-2509 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High resolution transmission electron microscopy and analytical electron microscopy show direct evidence for defect-free interfaces produced by in situ cluster deposition of Au, Ag, and Ti onto ultrahigh vacuum-cleaved n-GaAs. In contrast to interfaces produced by atom-by-atom deposition, no specific interface reconstruction or orientation relationship and no change of stoichiometry of the GaAs near the interface was observed. Schottky barrier heights correspond to unusual Fermi level pinning positions in the upper half of the GaAs band gap, in clear contrast to values obtained for atom deposition and for diodes prepared by standard technology on GaAs (100). These results give clear evidence that Fermi level pinning for metal/GaAs interfaces formed without defects does not follow the predictions of current metal-induced gap-state models.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structures and electronic properties of misfit dislocations in ZnSe/GaAs(001) heterojunctions have been studied by transmission electron microscopy, cathodoluminescence (CL), and photoluminescence. In undoped ZnSe epilayers, irregular dislocation segments tending to lie roughly along [100] and [010] directions were observed as well as long straight 60° dislocations along [110] and [11¯0] directions. In N-doped ([N](approximately-greater-than)1×1018 cm−3) ZnSe epilayers, the misfit dislocations were predominantly dissociated into partial dislocations which makes cross slip and formation of irregular dislocations more difficult; only the straight dislocations along [110] and [11¯0] were observed. The CL observations suggest that the irregular dislocations trap carriers more efficiently than the dislocations along 〈110〉.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3002-3004 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism responsible for the semi-insulating properties of low-temperature-grown GaAs is investigated by determining the concentration of arsenic antisite (AsGa)-related defects in the material. The concentrations of the defects in neutral and positively charged states, As0Ga and As+Ga, are determined by near-infrared absorption and magnetic circular dichroism of absorption, respectively. Materials grown and annealed at different temperatures are investigated. We find that the defects are abundant in all samples studied, with the concentration of As0Ga higher than that of As+Ga defects. The results indicate that the defects can account for the pinning of the Fermi energy and consequently also the semi-insulating properties of the material. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1677-1679 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interaction between a GaAs cap and InAs islands grown on vicinal GaAs(001) has been studied by transmission electron microscopy and atomic force microscopy. Samples were prepared by molecular beam epitaxy at 480 °C. Upon GaAs cap deposition, it was found that the previously grown InAs islands undergo a novel type of morphological transition, i.e., a transition from disk-shaped to ring-shaped islands. InAs becomes depleted or entirely absent in the central area of what had been a disk-shaped InAs island. The GaAs cap was also shown to be virtually absent within the same central region, resulting in the formation of crater-like surface depressions.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2995-2997 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Au/Te/Au contacts to n-type GaAs were prepared by sequential vapor deposition and subsequently annealed at temperatures in the range 420–480 °C. The structural and electrical characteristics of the contacts were characterized by transmission electron microscopy and current–voltage measurements. We found that the electrical behavior of the contacts depends dramatically on whether they are covered with an Al2O3 cap during annealing. While a cap-annealed Au/Te/Au contact remains rectifying, annealing without the cap results in ohmic behavior. In conjunction with the observed structural properties, this phenomenon can be understood in terms of the doping model for ohmic contact formation.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2274-2286 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma-filled pinched-electron-beam diode experiments have been performed on the Gamble II (1.5 MV, 800 kA, 60 ns) pulsed power generator at Naval Research Laboratory. These plasma-filled diode (PFD) experiments show three phases of behavior: a low impedance phase followed by a phase of rapidly increasing impedance that culminates in a relatively constant vacuum impedance phase. The duration of the low impedance phase as well as the final operating impedance depends on the prefill plasma density. The charged particle flow in the PFD is studied with one-dimensional (1-D) and two-dimensional (2-D) simulation models. These simulation models show the formation of growing sheaths at both electrodes during the low impedance phase. The end of the low impedance phase in the simulations coincides with the two sheaths meeting in the center of the anode-cathode (A-K) gap. Based on these observations, an analytic model was developed that treats the low impedance phase as symmetric bipolar sheaths. The analytical model adequately predicts the duration of the low impedance phase predicted by the 1-D simulation model. Differences between the bipolar model and the experiments or 2-D simulations can be explained in terms of magnetized sheaths which enhance the ion current over the bipolar level and cause the sheath to grow faster than the bipolar model. During the rapidly increasing impedance phase, the simulations show that the cathode sheath quickly expands to completely fill the A-K gap. At this time, charged particle flow in the simulation models are consistent with the vacuum gap spacing. Experimentally, the higher density, longer conduction time, PFD shots exhibited a significantly lower final impedances than predicted by 2-D simulations. This difference is probably caused by expanding electrode surface plasmas produced by the interaction of the plasma source with one or both electrode surfaces.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6457-6459 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By photoluminescence and by Zeeman spectroscopy we study the characteristic 4f luminescence transition 3H5 → 3H6 at 1.0 eV of thulium in gallium arsenide which has been reported recently. It turns out that optically active Tm3+, which is present in mainly one specific type of center, does not occupy a simple substitutional lattice site. The results show a considerable tetragonal crystal field. The excitation mechanism of the 1.0-eV luminescence is investigated by photoluminescence excitation. The 3H5 → 3H6 is pumped most efficiently by trapping of free excitons.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2977-2982 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple laser reflective interferometer has been employed for in situ monitoring of diamond film growth in a hot-filament chemical vapor deposition reactor. This method uses a low power HeNe laser beam reflected at normal incident from the substrate. The high refractive index of the diamond film and the relatively high reflectivity of the Si substrate result in pronounced and easily detected interference oscillations in the reflected beam intensity. The oscillation period provides an accurate and immediate measure of the growth rate. In addition, the variations of the extrema of the oscillations provide an estimate of the quality and surface texture of the diamond films. Significant improvement in research productivity has been realized by using this technique.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1660-1660 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
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