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  • 1
    Electronic Resource
    Electronic Resource
    Second harmonic generation as a sensitive technique for estimating Hc1 of high Tc materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1539-1541 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple and interesting technique for measuring the Hc1 of the superconducting grains in bulk high Tc superconductor (HTSC) samples is presented herein. This technique takes advantage of interesting history effects observed in the nonlinear magnetic response of HTSC samples. The hysteretic second harmonic magnetization shows sharp structure at low applied fields due to the magnetic flux trapped inside the grains. This feature is used to track the penetration of magnetic field inside the superconducting granular regions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354049
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  • 2
    Electronic Resource
    Electronic Resource
    Colossal magnetoresistance in Ce doped manganese oxides (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5390-5392 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study we investigate the effects of Ce doping in R1−xAxMnO3 (R=La, Ce, and A=Sr, Ce) on the magnetic and transport properties of this system. For La1−xCexMnO3 (LCMO), an increase in Ce concentration is accompanied by an increase in TC from 225 to 236 K, as well as an increase in the electrical resistivity. An extremely high resistivity is observed in the new system Ce1−xSrxMnO3 (CSMO) which becomes insulating below its Curie temperature of 43 K. A maximum magnetoresistance (MR) ratio of 40% for CSMO and 53% for LCMO is observed. A larger change in resistivity is seen to correspond to an increase in the Ce concentration, however this is offset by an overall resistivity increase which keeps the MR ratio low. The high resistivity may be due to unreacted oxides in the samples. If true, the amount of impurity appears to be proportional to the Ce doping. If this impurity level can be reduced, a significant colossal magnetoresistance effect could be exhibited by these systems. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369987
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  • 3
    Electronic Resource
    Electronic Resource
    Magnetic properties of iron nanoparticles grown in a glass matrix (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1642-1645 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Iron particles of diameters in the range 5.5–8.5 nm have been synthesized within a suitably chosen oxide glass by subjecting the latter to a 3Na+(arrow-right-and-left)Fe3+ exchange reaction followed by reduction treatment in hydrogen. Magnetic measurements have been carried out over the temperature range 20–300 K. The coercive force increases as the iron particle size is decreased. The maximum value of coercive force corresponding to 0 K (Hc0)∼548 Oe is obtained for a specimen having diameter of 6.5 nm. The magnetocrystalline anisotropy constant in the case of nanosized iron particles is estimated to be one order of magnitude higher than that of bulk iron. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361008
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  • 4
    Electronic Resource
    Electronic Resource
    Analysis of the thickness dependence of critical current density for electrophoretically deposited YBa2Cu3O7−x films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1120-1123 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An attempt has been made to explain the experimental observations regarding variation of critical current density with the film thickness between 3 and 65 μm in electrophoretically deposited YBa2Cu3O7−x films on silver (Ag) substrates. It is not possible to explain the phenomenon using the commonly believed concept of self-field degradation of critical current density of weak links between the grains. On the other hand, an increased grain-boundary resistance due to a lesser degree of silver penetration from the substrate with increasing film thickness is proposed to be the cause of the observed degradation of critical current density. The experimental data agree quite well with those theoretically calculated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358421
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  • 5
    Electronic Resource
    Electronic Resource
    Superparamagnetic nanocrystalline CuFe2O4 (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6226-6228 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cubic CuFe2O4 was prepared by coprecipitation in a polymer matrix. Crystallite size and particle size of the prepared samples, determined from x-ray data and transmission electron microscopy analyses respectively, are in the range of nanocrystalline materials. Cation distribution of the nanocrystalline samples was determined from x-ray diffraction data. Cuoct2+ content in the nanocrystalline samples is lower than the critical Cuoct2+ required for cooperative distortion to tetragonal symmetry and hence all the samples are cubic. Field cooled and zero field cooled magnetization measurements show superparamagnetic behavior of the nanocrystalline ferrite samples. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372662
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  • 6
    Electronic Resource
    Electronic Resource
    Possible analog gain in a current injection Josephson network (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2087-2090 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A possible analog gain in Cooper-pair tunneling mode in a current injection Josephson network is theoretically investigated. The network consists of three Josephson junctions A, B, and C, and its gain can be widely controlled by varying the external shunt resistances of junctions B and C. Two different configurations of the planar structure of the network are suggested and their detailed principles of operation are explained. It is expected that the network will function at a higher speed than that possible in an amplifying device working in quasiparticle mode. A comparison between the present network and Faris QUITERON is also given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336396
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  • 7
    Electronic Resource
    Electronic Resource
    A novel method for depth profiling and imaging of semiconductor devices using capacitive coupling voltage contrast (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4909-4915 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A scanning electron microscope was used in the voltage contrast mode to examine the relationship between dynamic secondary electron emission from passivated devices and buried structure depth. A primary electron beam energy of 500 eV was used. Depth measurement was performed on floating structures with an average error of 6.59%, 4.93% standard deviation, over a depth range of 0.04–0.76 μm. Further, a method of producing capacitive coupling voltage contast (CCVC) images of unbiased devices was developed, having a spatial resolution of better than 1 μm micron through passivation. A modified version of the Gorlich model for CCVC decay is presented to explain the experimental results [S. Gorlich, K. D. Herrmann, and E. Kubalek, in Proceedings of the Microcircuit Engineering 84 Conference (Academic, London, 1985)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338999
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  • 8
    Electronic Resource
    Electronic Resource
    Nonlinear temperature dependence of the refractive index of polycrystalline silicon films and the influence of microstructural disorder (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2072-2076 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of thin films are known to be affected by microstructural inhomogeneities. In this paper we study, using ellipsometry, the influence of microstructural disorder on the refractive index at 632.8 nm and on its dependence on temperature in the range 300–700 K in the case of thin noncrystalline low-pressure chemical-vapor deposition silicon films. It is found that films with large amorphous component have a behavior distinct from that shown by polycrystalline films. In particular, both the refractive index n and the thermo-optic coefficient dn/dT at room temperature have larger values for amorphous films than for polysilicon films. Furthermore, the thermo-optic coefficient dn/dT is found to vanish at about 500 K in the case of highly noncrystalline films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341110
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  • 9
    Electronic Resource
    Electronic Resource
    Magnetic behavior of CeFe2: Effects of ruthenium substitution (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4094-4095 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report ac-susceptibility measurements on the Laves phase compounds Ce (Fe1−xRux)2 with x=0.02, 0.04, and 0.06. The results show that the ferromagnetic alignment of Fe moments seems to be very easily disrupted by substitution of Ru on the Fe sites. All the three compounds, as well as showing the para- to ferromagnetic transition, indicate another transition at lower temperature. In the case of the x=0.02 compound, the character of the susceptibility at the lower transition is similar to that seen in reentrant spin glasses, while in the compounds richer in Ru the suppression of the low-field response is much more drastic.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340560
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  • 10
    Electronic Resource
    Electronic Resource
    Large magnetoresistance in La1−xSrxMnO3 and its dependence on magnetization (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 233-235 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we report large magnetoresistance (MR) in ceramic samples of La1−xSrxMnO3 (0.1≤x≤0.4) in the temperature range 4.2 K≤T≤350 K in fields up to 6 T. We find that a large negative and isotopic MR exists for the whole composition range studied and the absolute value of resistivity change on application of magnetic field is more for samples with lower x which have higher resistivity. We find that the large MR occurs in the ferromagnetic state only and MR has a close relation with the magnetization M. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113556
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