GLORIA

GEOMAR Library Ocean Research Information Access

X
feed icon rss

Ihre E-Mail wurde erfolgreich gesendet. Bitte prüfen Sie Ihren Maileingang.

Leider ist ein Fehler beim E-Mail-Versand aufgetreten. Bitte versuchen Sie es erneut.

Vorgang fortführen?

Exportieren
Filter
  • American Institute of Physics (AIP)  (4)
  • 1985-1989  (4)
Publikationsart
Verlag/Herausgeber
Erscheinungszeitraum
Jahr
  • 1
    Digitale Medien
    Digitale Medien
    Possible analog gain in a current injection Josephson network (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2087-2090 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A possible analog gain in Cooper-pair tunneling mode in a current injection Josephson network is theoretically investigated. The network consists of three Josephson junctions A, B, and C, and its gain can be widely controlled by varying the external shunt resistances of junctions B and C. Two different configurations of the planar structure of the network are suggested and their detailed principles of operation are explained. It is expected that the network will function at a higher speed than that possible in an amplifying device working in quasiparticle mode. A comparison between the present network and Faris QUITERON is also given.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.336396
    Standort Signatur Einschränkungen Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 2
    Digitale Medien
    Digitale Medien
    A novel method for depth profiling and imaging of semiconductor devices using capacitive coupling voltage contrast (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4909-4915 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A scanning electron microscope was used in the voltage contrast mode to examine the relationship between dynamic secondary electron emission from passivated devices and buried structure depth. A primary electron beam energy of 500 eV was used. Depth measurement was performed on floating structures with an average error of 6.59%, 4.93% standard deviation, over a depth range of 0.04–0.76 μm. Further, a method of producing capacitive coupling voltage contast (CCVC) images of unbiased devices was developed, having a spatial resolution of better than 1 μm micron through passivation. A modified version of the Gorlich model for CCVC decay is presented to explain the experimental results [S. Gorlich, K. D. Herrmann, and E. Kubalek, in Proceedings of the Microcircuit Engineering 84 Conference (Academic, London, 1985)].
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.338999
    Standort Signatur Einschränkungen Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 3
    Digitale Medien
    Digitale Medien
    Nonlinear temperature dependence of the refractive index of polycrystalline silicon films and the influence of microstructural disorder (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2072-2076 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The optical properties of thin films are known to be affected by microstructural inhomogeneities. In this paper we study, using ellipsometry, the influence of microstructural disorder on the refractive index at 632.8 nm and on its dependence on temperature in the range 300–700 K in the case of thin noncrystalline low-pressure chemical-vapor deposition silicon films. It is found that films with large amorphous component have a behavior distinct from that shown by polycrystalline films. In particular, both the refractive index n and the thermo-optic coefficient dn/dT at room temperature have larger values for amorphous films than for polysilicon films. Furthermore, the thermo-optic coefficient dn/dT is found to vanish at about 500 K in the case of highly noncrystalline films.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.341110
    Standort Signatur Einschränkungen Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 4
    Digitale Medien
    Digitale Medien
    Magnetic behavior of CeFe2: Effects of ruthenium substitution (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4094-4095 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report ac-susceptibility measurements on the Laves phase compounds Ce (Fe1−xRux)2 with x=0.02, 0.04, and 0.06. The results show that the ferromagnetic alignment of Fe moments seems to be very easily disrupted by substitution of Ru on the Fe sites. All the three compounds, as well as showing the para- to ferromagnetic transition, indicate another transition at lower temperature. In the case of the x=0.02 compound, the character of the susceptibility at the lower transition is similar to that seen in reentrant spin glasses, while in the compounds richer in Ru the suppression of the low-field response is much more drastic.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.340560
    Standort Signatur Einschränkungen Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
Schließen ⊗
Diese Webseite nutzt Cookies und das Analyse-Tool Matomo. Weitere Informationen finden Sie hier...