Publication Date:
2015-07-18
Description:
We investigate surface passivation effects of SiN x films deposited by inductive coupled plasma chemical vapor deposition (ICPCVD) and plasma enhanced chemical vapor deposition (PECVD) technologies for InAlAs/InGaAs/InP photo-detectors. It is found that ICPCVD deposited SiN x film effectively reduces the densities of the interface states and slow traps near SiN x /InAlAs interface, which realize the small surface recombination velocity and low surface current for InAlAs/InGaAs/InP photo-detectors. By comparing C-V and XPS results, it is suggested that the trap density reduction by ICPCVD technology could be attributed to the disorder suppression on InAlAs surface due to the high density of SiN x film and less processing energy to the InAlAs surface.
Print ISSN:
0021-8979
Electronic ISSN:
1089-7550
Topics:
Physics
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