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  • 1
    Online-Ressource
    Online-Ressource
    [s.l.] : Springer-Verlag
    Schlagwort(e): Migration ; Geography ; Economic geography. ; Geotechnical engineering. ; Emigration and immigration. ; Geography ; Migration ; Georgien ; Geografie
    Beschreibung / Inhaltsverzeichnis: Introduction -- Section 1: Historical and Political Geography -- Ancient History -- Historical and Political Geography -- Ethnic Groups and Religions -- Demographics -- Sociocultural Geography -- Section 2: Geological Processes -- Geology -- Geodynamical Processes -- Glacial and Periglacial Processes -- Section 3: Ecological Processes -- Landscapes -- Deforestation and Reforestation -- Desertification -- Ecosystems -- Anthropogenic Impact on Environment.-Section 4: Developmental Geography -- Economical History -- Economics -- Natural Resources -- Sustainable Development -- Global Warming and Climate Change.-Law and Government.
    Materialart: Online-Ressource
    Seiten: Online-Ressource (XVIII, 228 p. 187 illus., 150 illus. in color, online resource)
    ISBN: 9783319054131
    Serie: World Regional Geography Book Series
    RVK:
    Sprache: Englisch
    Anmerkung: Description based upon print version of record , IntroductionSection 1: Historical and Political Geography -- Ancient History -- Historical and Political Geography -- Ethnic Groups and Religions -- Demographics -- Sociocultural Geography -- Section 2: Geological Processes -- Geology -- Geodynamical Processes -- Glacial and Periglacial Processes -- Section 3: Ecological Processes -- Landscapes -- Deforestation and Reforestation -- Desertification -- Ecosystems -- Anthropogenic Impact on Environment.-Section 4: Developmental Geography -- Economical History -- Economics -- Natural Resources -- Sustainable Development -- Global Warming and Climate Change.-Law and Government.
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4148-4155 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Conduction current in the phosphor layer of ZnS:Mn ac thin film electroluminescent (ACTFEL) display device was measured as a function of the amplitude and the rise time of the bipolar voltage pulses: electric field in the phosphor was also determined. It was found that the clamping field of an ac thin film electroluminescent device is not a single-valued device characteristic. The clamping field depended upon the rise time of the applied voltage pulse increasing in value as the rise time became smaller. These data were interpreted in terms of a nonideal breakdown of the insulator-phosphor interface and a time delay involved in the emission of electrons from this interface. To account for the nonideality in the interface breakdown the ac equivalent circuit of the ACTFEL device was modified by including a voltage-dependent resistor in parallel with the phosphor capacitance. The phosphor current measurements, transferred charge measurements and tunneling current calculations indicate that in the nonhysteretic ZnS:Mn devices under investigation, impact ionization in the phosphor layer, if present at all, leads to relatively small carrier multiplication factors.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1811-1819 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Current flow through the phosphor layer of ac thin film electroluminescent display devices has been analyzed. It is shown that the traditional capacitive bridge technique for measuring the time dependence of phosphor conduction current [iLP(t)] can yield inaccurate results, especially when the multiplication factor of [(CI + Cp)/CI] is not used, and the phosphor layer has bulk space charge; CI and Cp are insulator and phosphor layer capacitances, respectively. A new method for the measurement of iLP(t) has been developed. It is more accurate and is applicable even when the bulk charge in the phosphor layer is not negligible. The new method was applied to the study of ZnS:Mn ac thin-film electroluminescent (ACTFEL) devices excited by voltage pulses of three different slew rates. iLP(t) measured by the new method was compared against the bridge current (ibridge). Electric field and displacement current in the phosphor were calculated. Transferred charge computed by integrating iLP and ibridge over half cycle was compared against the polarization charge obtained from the Q–V curve of the device.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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