Note: Front Cover -- Semiconductors and Semimetals, Volume 35 -- Copyright Page -- Contents -- Contributors -- Preface -- Chapter 1. Introduction -- References -- Chapter 2. Quantum Point Contacts -- I. Introduction -- II. Split-Gate Quantum Point Contacts -- III. Ballistic Quantum Transport -- IV. AdiabaticTransport in theQuantum Hall Effect Regime -- V. Acknowledgments -- References -- Chapter 3. When Does a Wire Become an Electron Waveguide? -- I. Introduction -- II. Two-Terminal Resistance of an Electron Waveguide -- III. Three-Terminal Resistance -- IV. Four-Terminal Resistance -- V. Summary and Outlook -- Acknowledgments -- References -- Chapter 4. The Quantum Hall Effect in Open Conductors -- I. Introduction -- II. Basic Elements of Electrical Conduction -- III. Quantization and Interference in the Absence of a Field . -- IV. Motion in High Magnetic Fields: The Two-Terminal Resistance -- V. The Quantum Hall Effect in Open Conductors -- VI. Resonant Departures from the Hall Resistance -- VII. Discussion -- Acknowledgment -- References -- Chapter 5. Electrons in Laterally Periodic Nanostructures -- I. Introduction -- II. Realization of Laterally Periodic Nanostructures -- III. Transport in Periodic Nanostructures -- IV. Far-Infrared Spectroscopy of Electronic Excitations -- V. Conclusions and Perspectives -- Acknowledgments -- References -- Index -- Contents of Volumes in This Series.

Note: Front Cover -- The Spectroscopy of Semiconductors -- Copyright Page -- Contents -- List of Contributors -- Preface -- Chapter 1. Laser Spectroscopy of Semiconductors at Low Temperatures and High Magnetic Fields -- I. Introduction -- II. Experimental Techniques -- III. GaAs Quantum Well Structures -- IV. Magnetic Semiconductors -- Acknowledgments -- References -- Chapter 2. Transient Spectroscopy by Ultrashort Laser Pulse Techniques -- I. Introduction -- II. Instrumentation for Time-Resolved Spectroscopy -- III. Time-Resolved Spectroscopy in Semiconductors: Approaches -- IV. Portfolio of Experimental Examples in Time-Resolved Spectroscopy -- V. Concluding Remarks -- References -- Chapter 3. Piezospectroscopy of Semiconductors -- I. Introduction -- II. Elasticity, Symmetry, Latent Anisotropy, and Deformation Potentials. -- III. Experimental Techniques -- IV. Valence and Conduction Bands of Elemental and Compound Semiconductors under External Stress -- V. Interband Transitions and Associated Excitons -- VI. Lyman Spectra of Shallow Donors and Acceptors -- VII. Zone-Center Optical Phonons -- VIII. Optical Phonons and Electronic States -- IX. Concluding Remarks -- Acknowledgments -- References -- Chapter 4. Photoreflectance Spectroscopy of Microstructures -- I. Introduction -- II. Microstructures -- III. Modulation Spectroscopy -- IV. Experimental Details -- V. Experimental Spectra -- VI. Conclusions -- References -- Chapter 5. One-and Two-Photon Magneto-Optical Spectroscopy of InSb and Hg1-xCdxTe -- I. Introduction -- II. Experimental Methods -- III. One-Photon Magnetospectroscopy -- IV. Two-Photon Absorption (TPA) and Two-Photon Magnetoabsorption (TPMA) Spectroscopy -- References -- Index -- Contents of Previous Volumes.

Note: Front Cover -- Oxygen in Silicon: Semiconductors and Semimetals -- Copyright Page -- Contents -- List of Contributors -- Preface -- Chapter 1. Introduction to Oxygen in Silicon -- Chapter 2. The Incorporation of Oxygen into Silicon Crystals -- I . Introduction -- II. Silicon Crystal Growth -- III. Characteristics of Czochralski Silicon Growth -- IV. Oxygen Incorporation and Segregation in Czochralski Silicon Growth -- V. Controlled Oxygen Silicon Growth -- VI. Summary -- References -- Chapter 3. Characterization Techniques for Oxygen in Silicon -- I. Introduction -- II. Physical Techniques -- Ill. Chemical Techniques -- IV. Electrical Techniques -- V. Summary -- References -- Chapter 4. Oxygen Concentration Measurement -- I. Introduction -- II. Infrared Absorption Measurements Under Ideal Conditions -- III. Infrared Spectrometers -- IV. Analysis of Oxygen Spectra -- V. Absolute Determinations and Calibration Factors -- VI. Standards and Reference Materials -- VII. Summary -- Acknowledgments -- References -- Chapter 5. Intrinsic Point Defects in Silicon -- I. Introduction -- II. Swirl Defect Manifestation of Intrinsic Point Defects -- III. Thermal Defects in Silicon -- IV. Self-Diffusion -- V. Coexistence of Vacancies and Self-Interstitials in Silicon -- VI. Interstitial Configuration and Charge-Enhanced Migration -- VII. Formation and Migration Parameters of Point Defects -- VIII. Defect Energetics and Pathways from Theoretical Calculations -- IX. Summary -- References -- Chapter 6. Some Atomic Configurations of Oxygen -- I. Introduction -- II. Spectroscopy of Localized Modes in Semiconductors -- III. Interstitial Oxygen -- IV. Quasi-Substitutional Oxygen -- V. Comparison with Other Light Element Impurities -- VI. Oxygen in Other Semiconductors -- VII. Summary -- Acknowledgments -- References. , Chapter 7. Electrical Properties of Oxygen in Silicon -- I. Introduction -- II. Thermal Donors -- III. New Donors -- References -- Chapter 8. Diffusion of Oxygen in Silicon -- I. Introduction -- II. Direct Measurements of Normal Oxygen Diffusion -- III. Indirect Measurements of Normal Oxygen Diffusion -- IV. Enhanced Oxygen Diffusion Not Involving Hydrogen -- V. Silicon Containing Hydrogen Impurities -- VI. Theoretical Modeling of Oxygen Diffusion -- VII. Constraints on Models of Thermal Donor Centers -- VIII. Summary -- Acknowledgments -- References -- Chapter 9. Mechanisms of Oxygen Precipitation: Some Quantitative Aspects -- I. Introduction -- II. Volume Shortage Associated with Oxygen Precipitation -- III. Precipitate Nucleation -- IV. Precipitate Growth -- V. The Effect of Carbon -- VI. Defect Generation -- VII. Summary: The Free Energy and Flux Balance Treatment of the Oxygen Precipitation Problem -- References -- Chapter 10. Simulation of Oxygen Precipitation -- I. Introduction -- II. Model Types -- III. Models and Experimental Results -- V. On the Interactions of Oxygen with Other Defects -- VI. Summary -- References -- Chapter 11. Oxygen Effect on Mechanical Properties -- I. Introduction -- II. Plastic Deformation and Dislocations in Silicon Crystals -- III. Influence of Dispersed Oxygen Atoms on the Mobility of Dislocations in Silicon -- IV. Immobilization of Dislocations by Oxygen -- V. Effect of Oxygen on Dislocation Generation -- VI. Mechanical Properties of Silicon as Influenced by Oxygen Impurities -- VII. Influence of Oxygen Precipitation on Mechanical Strength -- VIII. Effects of Nitrogen and Carbon Impurities on Mechanical Properties of Silicon -- IX. Summary -- References -- Chapter 12. Grown-in and Process-Induced Effects -- I. Introduction -- II. Oxygen Precipitation During High-Temperature Processes. , III. Grown-in Defects: Precipitation and Intrinsic Defect Aggregation During Crystal Growth -- IV. Summary -- References -- Chapter 13. Intrinsic/Internal Gettering -- I. lntroduction -- II. Surface and Interior Microdefects -- III. Gettering -- IV. Oxygen Behavior in Silicon -- V. Internal Gettering Process and Mechanism -- VI. Summary -- References -- Chapter 14. Oxygen Effect on Electronic Device Performance -- I. Introduction -- II . Device Characteristics and Crystal Defects -- III. Defect Generation -- IV. Improvement of Device Yield -- V. Summary -- Acknowledgments -- References -- Index -- Contents of Volumes in this Series.

Note: Front Cover -- Epitaxial Microstructures -- Copyright Page -- Contents -- Contributors -- Preface -- Chapter 1. Delta-Doping of Semiconductors: Electronic, Optical, and Structural Properties of Materials and Devices -- I. Introduction -- II. Crystal Growth of δ Doped Semiconductors -- III. Electronic Structure -- II. Spatial Distribution of Dopants in δ-Doped Semiconductors -- V. Electronic Properties of δ Doped Semiconductors -- VI. Field-Effect Transistors -- VII. Properties of δ Doped Doping Superlattices -- VIII. Optoelectronic Devices -- IX. Concluding Remarks -- Acknowledgments -- References -- Chapter 2. Wide Graded Potential Wells -- I. Introduction -- II. Epitaxial Growth of Graded Wells -- III. Electronic Structure and Optical Properties of Undoped Wells -- IV. Modulation-Doped Wide Parabolic Wells -- V. Electron Transport -- VI. Electron Excitations -- VII. Superlattices in Parabolic Wells -- VIII. Conclusions -- Acknowledgments -- References -- Chapter 3. Direct Growth of Nanometer-Size Quantum Wire Superlattices -- Abstract -- Introduction -- I. Growth Kinetics and Interfaces in Conventional Superlattices and Quantum Wells -- II. The Growth of Lateral Superlattices -- III. The Serpentine Superlattice Growth -- IV. Remaining Issues in the Epitaxy of Lateral Superlattice Type Structures: Segregation and Size Uniformity -- V. Optical Properties of Lateral Superlattice Based Structures -- VI. Other Lateral Superlattice Based Structures -- VII. Another Direct Growth Method of Quantum Wire Structures -- VIII. Conclusions -- Acknowledgments -- References -- Chapter 4. Lateral Patterning of Quantum Well Heterostructures by Growth of Nonplanar Substrates -- I. Introduction -- II. Lateral Patterning Mechanisms -- III. Lateral Patterning by MBE on Nonplanar Substrates -- IV. Lateral Patterning by OMCVD on Nonplanar Substrates. , V. Device Applications -- VI. Conclusions and Future Directions -- Acknowledgments -- References -- Chapter 5. Optical Properties of Ga1-xInxAs/InP Quantum Wells -- I. lntroduction -- II. Computation of Energy Levels in Quantum Wells -- III. Optical Properties of Quantum Wells and Superlattices -- IV. Dynamic Effects -- V. Quantum Wires and Boxes -- VI. Electric Field Effects -- VII. Strained Layer Superlattices -- VIII. Thermal Stability and Impurity Induced Disordering -- IX. Summary -- Acknowledgments -- References -- Index -- Contents of Volumes in this Series.

Note: Front Cover -- Imperfections in III/V Materials -- Copyright Page -- Contents -- List of Contributors -- Preface -- Chapter 1. Density-Functional Theory of sp-Bonded Defects in III/V Semiconductors -- I. Introduction -- II. Thermodynamics of Defects in Semiconductors -- III. Ab-lnitio Calculation of the Electronic Ground State and of Atomic Vibrations -- IV. Methods and Techniques -- V. Electronic Structures and Concentrations of Native Defects -- VI. An Intrinsic Metastability of Antisite and Antisite-like Defects -- VII. The EL2 Defect -- VIII. The DX Centers -- Acknowledgment -- References -- Chapter 2. EL2 Defect in GaAs -- I. Introduction -- II. Properties of EL2 Defect -- III. Arsenic Antisite Defect in GaAs -- IV. Energy Levels of EL2 Defect -- V. Models of EL2 Defect -- VI. Conclusions -- References -- Chapter 3. Defects Relevant for Compensation in Semi-insulating GaAs -- I. Introduction -- II. Compensation in Bulk GaAs -- Ill. The Calculation of Compensation -- IV. Known Defects in GaAs -- V. The As-Precipitate Model for Compensation -- VI. Summary -- References -- Chapter 4. Local Vibrational Made Spectroscopy of Defects in III/V Compounds -- I. Introduction -- II. Localized Vibrational Mode Spectroscopy -- III. Oxygen Impurities -- IV. Beryllium Impurities -- V. Carbon Impurities -- VI. Boron Impurities -- VII. Silicon Impurities -- VIII. Hydrogen Passivation of Shallow Impurities -- IX. Radiation Damage -- X. Conclusions -- Note -- Acknowledgments -- References -- Chapter 5. Transition Metals in III/V Compounds -- I. Introduction -- II. General Properties of Transition Metal Impurities -- III. 3dn Transition Metals -- IV. 4dn and 5dn Transition Metals -- V. Semi-insulating TM-Doped III/V Materials -- Appendices -- References -- Chapter 6. DX and Related Defects in Semiconductors -- I. Introduction -- II. Electrical Properties. , III. Optical Properties -- IV. Models of DX -- V. Microscopic Structure of the DX Center -- VI. Magnetic Properties of DX: The Negative-U Issue -- VII. Technology and DX -- VIII. Summary -- Acknowledgments -- References -- Chapter 7. Dislocations in III/V Compounds -- I. Introduction -- II. Dislocation Types and Structures -- III. Mechanical Properties -- IV. Dislocation Generation and Reduction during Growth of Bulk Crystals -- V. Dislocations and Device Performance -- Note -- References -- Chapter 8. Deep Level Defects in the Epitaxial III/V Materials -- I. Introduction -- II. Observation of Deep States in Epitaxial Layers -- III. Epitaxial Binaries -- IV. Epitaxial Ternaries and Quaternaries -- V. Quantum Wells, Superlattices, and Interfaces -- VI. Deep Levels in Structurally Disordered III/V Layers -- VII. Conclusion -- References -- Chapter 9. Structural Defects in Epitaxial III/V Layers -- I. Introduction -- II. Homoepitaxy -- III. Heteroepitaxy -- IV. Methods to Decrease the Defest Density in the Epitaxial Layers -- V. Conclusions -- Acknowledgment -- References -- Chapter 10. Defects io Metal/III/V Heterostructures -- I. Introduction -- II. Movement of the Fermi Level and Departures from GaAs Stoichiometry -- III. A Model to Explain Fermi Level Moment -- IV. GaAs/Insulator Interfaces -- V. Conclusions and Discussion -- Acknowledgment -- References -- Index -- Contents of Volumes in This Series.

Note: Cover -- Half Title -- Series Page -- Title Page -- Copyright Page -- Preface -- The Editor -- Contributors -- Table of Contents -- Section 1: Optical Crystals -- Section 2: Optical Glasses -- Section 3: Optical Plastics -- Section 4: Optical Liquids -- Section 5: Filter Materials -- Section 6: Linear Electrooptic Materials -- Section 7: Nonlinear Optical Materials -- 7.1. Organic and Inorganic Materials -- 7.2. Cluster-Insulator Composites -- Section 8: Nonlinear Optical Properties -- 8.1. Nonlinear Refractive Index -- 8.1.1. Inorganic Materials -- 8.1.2. Organic Materials -- 8.2. Two-Photon Absorption -- 8.2.1. Inorganic Materials -- 8.2.2. Organic Materials -- 8.3. Stimulated Raman and Brillouin Scattering -- Section 9: Magnetooptic Materials -- 9.1. Crystals and Glasses -- 9.2. Organic and Inorganic Liquids -- Section 10: Elastooptic Materials -- Section 11: Photorefractive Materials -- Section 12: Nonlinear Optical Phase Conjugation Materials -- Section 13: Gradient-Index Materials -- Section 14: Liquid Crystals -- Section 15: Diamond Optics -- Section 16: Laser Crystals -- Section 17: Laser Glasses -- 17.1. Bulk Glasses -- 17.2. Waveguide Glasses -- Section 18: Optical Waveguide Materials -- 18.1. Crystals -- 18.2. Glasses -- 18.3. Plastic Optical Fibers -- Section 19: Optical Coatings for High Power Lasers -- Appendix 1: Abbreviations, Acronyms, Initialisms, and Mineralogical or Common Names of Optical Materials -- Appendix 2: Abbreviations for Methods of Preparing Optical Materials and Thin Films -- Appendix 3: Designations of Russian Optical Glasses -- Index.