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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2852-2856 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A systematic investigation of crystallographic and intrinsic magnetic properties of the compounds RFe9Si2Cx (R=Ce, Pr, Nd, Sm; x=0.5, 1.0, 1.5) has been carried out. The lattice parameters a, c and the unit cell volumes increase with increasing C contents, resulting in the increases of Curie temperatures by about 100–150 K between x=0.5 and x=1.5. The saturation magnetization of RFe9Si2Cx (R=Pr, Nd, Sm) at 1.5 K passes through a maximum at x=1.0, and then decreases slightly. Meanwhile, the average iron moment μFe at 1.5 K is 1.57μB for x=1.0 and 1.63μB for x=1.5 in CeFe9Si2Cx compounds. SmFe9Si2Cx compounds have uniaxial anisotropy with the anisotropy fields HA estimated around 132 kOe at 1.5 K and 50 kOe at 300 K (x=1.5), respectively. First-order magnetization processes are observed in the NdFe9Si2Cx compounds and the first-order magnetization processes critical field Hcr is found to increase with x. In addition, the critical temperature for the onset of the first-order magnetization processes transition is around 90 K in the case of x=1.0. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 116 (2002), S. 5574-5583 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: A guided ion beam tandem mass spectrometer is used to examine the kinetic energy dependence of reactions of the third-row transition metal cations, Ta+, and W+, with molecular hydrogen and its isotopologs. A flow tube ion source produces Ta+ and W+ ions in their electronic ground state term and primarily in the lowest spin–orbit level. Corresponding state-specific reaction cross sections are obtained. Modeling of the endothermic reaction cross sections yields the 0 K bond dissociation energies in eV (kJ/mol) of D0(Ta+–H)=2.38±0.06 (230±6) and D0(W+–H)=2.27±0.05 (219±5). The experimental thermochemistry is consistent with ab initio calculations, performed here and from the literature, which also provide the electronic structures of these species and details about the reaction surfaces. Results from reactions with HD provide insight into the reaction mechanisms and indicate that these early metal ions, Ta+ and W+, react largely via insertion mechanisms. Results for these third-row transition metal systems are compared with the first-row and second-row congeners and found to have higher reactivity towards dihydrogen and stronger M+–H bonds. These differences can be attributed to the lanthanide contraction, relativistic effects, and efficient spin–orbit interactions among surfaces of different spin. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 116 (2002), S. 5565-5573 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: A guided ion beam tandem mass spectrometer is used to examine the kinetic energy dependence of reactions of the third-row transition metal cation, Pt+, with molecular hydrogen and its isotopologs. A flow tube ion source produces Pt+ ions in its electronic ground state term and primarily in the lowest spin–orbit level. Corresponding state-specific reaction cross sections are obtained. Modeling of the endothermic reaction cross sections yields the 0 K bond dissociation energy of D0(Pt+–H)=2.81±0.05 eV (271±5 kJ/mol). The experimental thermochemistry is consistent with ab initio calculations, performed here and in the literature. Theory also provides the electronic structures of these species and is used to examine the reactive potential energy surfaces. Results from reactions with HD provide insight into the reaction mechanisms and indicate that the late metal ion, Pt+, reacts largely via a direct mechanism. Results for this third-row transition metal system are compared with the first-row and second-row congeners and found to have higher reactivity towards dihydrogen and stronger M+–H bonds. These differences can be attributed to lanthanide contraction and relativistic effects. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 115 (2001), S. 9747-9763 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: The kinetic energy dependences of the reactions of Fen+ (n=2–15) with CD4 are studied in a guided ion beam tandem mass spectrometer over the energy range of 0–10 eV. All reactions exhibit thresholds and two main products, FenD+ and FenCD2+, are formed. These primary products decompose at higher energies to form secondary and higher order products, FenCD+, FenC+, Fen−1D+, Fen−1CD2+, Fen−1CD+, and Fen−1C+. The cross-section magnitudes for the dehydrogenation products, FenCD2+, are observed to vary considerably as a function of cluster size; subsequent dehydrogenation to form FenC+ becomes more facile for larger clusters. Thresholds for the various primary and secondary reactions are analyzed and bond energies for iron cluster cation bonds to C, CD, CD2, and CD3 are determined. As a function of cluster size, these bond energies rapidly reach relatively constant values, which are argued to lie close to bulk phase values. The relative magnitudes in these bond energies are consistent with simple bond order considerations. On the basis of this thermochemistry, we find that there are barriers to the primary dehydrogenation reactions for all the clusters, except n=3 and 4. Evidence that this barrier for n≥5 corresponds to the chemisorption step is discussed. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 4022-4024 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Starting from carefully homogenized Nd10Fe90-yMoy (y=12, 10, 7) alloys and by appropriate mechanical milling, the as-milled microstructure consisting of a nanoscale mixture of severely distorted 1:12 phase and substitutional α-Fe-based solid solution was obtained. This kind of as-milled microstructure was thought to have a critical effect on the formation of iron-free nanocrystalline 1:12 phase during subsequent annealing. Upon nitrogenation, the sample of Nd10Fe78Mo12Nx exhibited a record-high coercivity of 13.1 kOe at 293 K. Measurements of initial magnetization curve and a family of demagnetization curves engendered under different maximum applied fields Hm were carried out, and the results revealed the domain-wall pinning at grain boundaries as the coercivity mechanism. A low Mo-content sample of Nd10Fe83Mo7Nx with iHc∼5.8 kOe, Br∼6.8 kG, and (BH)max∼7.0 MG Oe was made by optimizing the preparation conditions. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
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  • 6
    ISSN: 1471-4159
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Notizen: Abstract: Deficits of cortical nicotinic acetylcholine receptors (nAChRs) have been observed in Alzheimer’s disease (AD) by receptor binding assays. Little is known about the receptor subunit specificity influenced by AD, and it might be of importance for therapeutic strategies. In the present study, the protein levels of nAChR α3, α4, α7, and β2 subunits were investigated using western blot analysis on postmortem brains of patients with AD and age-matched controls. The results showed that in human postmortem brain samples, bands with molecular masses of 52, 42, and 50 kDa were detected by anti-α4, anti-α7, and anti-β2 antibodies, respectively. When anti-α3 antibody was used, one major band of 49 kDa and two minor bands of 70 and 38 kDa were detected. In AD patients, as compared with age-matched controls, the α4 subunit was reduced significantly by ∼35 and 47% in the hippocampus and temporal cortex, respectively. A significant reduction of 25% in the α3 subunit was also observed in the hippocampus and a 29% reduction in the temporal cortex. For the α7 subunit, the protein level was reduced significantly by 36% in the hippocampus of AD patients, but no significant change was detected in the temporal cortex. In neither the hippocampus nor the temporal cortex was a significant difference observed in the β2 subunit between AD patients and controls. These results reveal brain region-specific changes in the protein levels of the nAChR, α3, α4, and α7 subunits in AD.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 86 (2003), S. 0 
    ISSN: 1551-2916
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Maschinenbau , Physik
    Notizen: Hot-pressed silicon carbide, containing aluminum, boron, and carbon additives (ABC-SiC), was subjected to three-body and two-body wear testing using diamond abrasives over a range of sizes. In general, the wear resistance of ABC-SiC, with suitable heat treatment, was superior to that of commercial SiC. When the fine-scale (3 μm) diamond abrasives were used, it was found that thermal annealing at 1300°C increased the resistance to three-body wear by a factor of almost three, and two-body wear by a factor of almost two, compared with as-hot-pressed samples. Higher annealing temperatures, however, led to a decline in wear resistance from its highest value. Similar behavior was seen for 1300°C-annealed samples subjected to 15 μm diamond abrasive, although higher-temperature annealing at 1500°–1600°C enhanced the wear resistance again. When coarse abrasives (72 μm) were used, the wear resistance progressively increased with increased annealing temperature from ∼1000° to 1600°C. Corresponding transmission and scanning electron microscopy studies indicated that, whereas transgranular, conchoidal cracking was dominant in the mild abrasive wear with fine-scale (3 μm) abrasives, intergranular cracking and subsequent grain pullout was far more predominant in the more severe abrasive wear with coarse abrasives. Because the hardness and indentation toughness were barely altered during thermal treatment, the observed wear behavior was attributed mainly to the thermally induced microstructural changes, including the crystallization of glassy grain-boundary films, the possible strengthening of the boundaries due to the enhancement of the aluminum, and the formation of aluminum-rich, coherent nanoscale precipitates in the matrix grains above 1300°C.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 84 (2001), S. 0 
    ISSN: 1551-2916
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Maschinenbau , Physik
    Notizen: Flexural creep behavior is reported for an in situ-toughened SiC between 1100° and 1500°C in four-point bending. The flexural creep rate of this SiC, sintered with aluminum, boron, and carbon (ABC-SiC), exhibits linear stress dependence, low apparent activation energy, and low incidence of cavitation and dislocation production. Most grain boundaries in this ceramic contain 1–5 nm intergranular films. The creep rate is consistent with a grain-boundary transport mechanism involving diffusion along the grain-boundary film-SiC interfaces. The microstructure and grain boundaries have been examined using transmission electron microscopy to assess possible changes during creep, particularly in relation to the applied stress direction.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 83 (2000), S. 0 
    ISSN: 1551-2916
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Maschinenbau , Physik
    Notizen: An in situ-toughened silicon carbide (ABC-SiC) has been examined in the as-processed condition, where the grain-boundary films are predominantly amorphous, and following thermal exposure at a temperature of 1300°C, where the films become fully crystalline. Previous work has shown that, at elevated temperatures (up to 1300°C), after the grain-boundary films crystallize in situ, only a marginal reduction in strength, fracture toughness, and cyclic-fatigue crack-growth properties is observed, in comparison with those of the as-processed microstructure at 25°C. In the present study, the effect of such crystallization on the subsequent strength, toughness, and fatigue properties at 25°C is examined. Little or no degradation is observed in the room-temperature properties with the crystallized grain-boundary films/phase; in fact, although the strength shows a small reduction (∼3%), the fracture toughness and fatigue-crack-growth threshold both increase by ∼20%, compared with that of the as-processed structure with amorphous grain-boundary films.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 84 (2001), S. 0 
    ISSN: 1551-2916
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Maschinenbau , Physik
    Notizen: Silicon carbide hot-pressed with aluminum, boron, and carbon as sintering aids (ABC–SiC), was studied by transmission electron microscopy. Both grain-boundary films and inclusions were prevalent in this material. The present study characterized the inclusions located in triple-junctions, grain boundaries, and the interior of the SiC grains, with emphases on phases not scrutinized before. These inclusions were crystalline, in contrast to the amorphous grain-boundary films. Two dominant types of boron-free triple-junction phases containing Al(Si)-O-C-(S) and Al(Si)-O were identified, where sulfur was an unexpected contaminant, and silicon came from SiO2 or from dissolution of SiC. Boron-containing inclusions with a composition Al-O-B-C were frequently observed inside SiC grains. Although the boron-free aluminum-rich phases wet the grain boundaries completely and are, therefore, effective sintering additives, the boron-containing Al(Si)-O-B-C did not wet the grain boundaries. The structure and chemical composition of these boron-containing intragranular inclusions were determined, and their mechanism of formation is discussed.
    Materialart: Digitale Medien
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