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  • 1
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    Teeth of Past and Present Elephants: Microstructure and Composition of Enamel in Fossilized Proboscidean Molars and Implications for Diagenesis (2021)
    Details
    Publikationsdatum: 2021-07-21
    Beschreibung: Enamel as hardest biological tissue remains unaltered for millions of years and is therefore an excellent archive for studies on paleodiet, paleoecology, paleoclimate, paleoenvironment, biomechanical, and evolutionary studies. However, diagenetic alterations can influence such interpretations and therefore we analyzed the microstructure and composition (elemental and stable isotopic) of fossil and extant proboscidean teeth to study the extent of diagenesis in them. We report for the first time on the enamel microstructure data of the Indian elephantiformes Anancus, Stegodon, Elephas, and Palaeoloxodon besides analyzing Gomphotherium and Deinotherium from new formations. Furthermore, we compare their microstructure with those of the primitive African taxa of Moeritherium and Palaeomastodon. Our results from depth‐related elemental composition and oxygen isotope ratios of enamel phosphate and carbonate indicate no or only negligible modification. There is also a lack of age‐dependency of these minor alterations within the fossils collected from Siwaliks of the Himalayan Foreland Basin. Overall, our study indicates that diagenesis has not played any significant role on the samples studied here and are therefore well suited for chemical and paleontological studies and proxy for paleoclimate and paleoenvironment reconstruction.
    Beschreibung: Key Points: Enamel of fossil elephants is well‐preserved from diagenesis. Electron microscopy, X‐ray diffraction, isotope analysis and elemental analysis give the composition and ultrastructure of enamel.
    Beschreibung: Deutscher Akademischer Austauschdienst (DAAD) http://dx.doi.org/10.13039/501100001655
    Beschreibung: Department of Science and Technology, Ministry of Science and Technology, India (DST) http://dx.doi.org/10.13039/501100001409
    Beschreibung: Ministry of Earth Sciences (MoES) http://dx.doi.org/10.13039/501100001851
    Beschreibung: DST, Science and Engineering Research Board (SERB) http://dx.doi.org/10.13039/501100001843
    Schlagwort(e): 560.4 ; diagenesis ; enamel ; microstructure ; oxygen isotopes ; Proboscidean ; teeth
    Materialart: article
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  • 2
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    Seasonal variation in the physico-chemical properties of Rushikulya estuary and its effect on the occurrence of Chanos fry (2021)
    In:  http://aquaticcommons.org/id/eprint/15928 | 12051 | 2015-01-16 08:52:26 | 15928 | Indian Fisheries Association
    Details
    Publikationsdatum: 2021-07-11
    Beschreibung: Seasonal variation in some physico-chemical properties of Rushikulya estuary was studied. The surface water temperature varied from 20 to 34.5 degree C, the transparency of the water from 6.3 to 12 cm, the salinity from 28.3 to 32.8 % and the pH from 6.77 to 7.35. The transparency and salinity showed bimodal distribution. Occurrence of the Chanos fry were correlated to it.
    Schlagwort(e): Chemistry ; Environment ; temperature data ; nursery grounds ; seasonal variations ; salinity data ; estuary ; Chanos chanos ; marine ; Rushikulya river ; Odisha ; Orissa ; India
    Repository-Name: AquaDocs
    Materialart: article
    Format: application/pdf
    Format: application/pdf
    Format: 69-71
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  • 3
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    Indian white shrimp (Fenerropenaeus indicus) culture two times a year in Gwatar shrimp farm, Iran (2021)
    In:  http://aquaticcommons.org/id/eprint/23705 | 18721 | 2018-07-20 07:21:20 | 23705 | Iranian Fisheries Science Research Institute
    Details
    Publikationsdatum: 2021-07-15
    Beschreibung: During the decade 1991-2001, culture of Indian White Shrimp grew rapidly in Iran due to high profitability, but afterwards suffered a decreasing trend with many farms still being idle after Construction. The trend occurred mainly due to (1) increase in production costs with simultaneous decrease in international shrimp market price, (2) Agro-climatic conditions that favored only one crop a year, which is not profitable, and (3) fear about spread of disease as already experienced in the case of white spot disease in Khouzestan and Bushehr provinces. Based on these facts, we aimed in our study to increase production of the shrimp per year, to reduce days of culture (DOC) in second crop through nursery system, to control food conversion ratio (FCR), and to manage shrimp production in Gwatar shrimp farming complex. Six farms were selected, and in three we applied two crops a year production system using nursery for the second crop. In other three farms one crop was harvested. Shrimps in two-crop farms were kept 52 days of the second crop in nursery and then transferred to grow-out ponds. All farms harvested before DOC 128. Mean productions per hectare in the first and second crop were 1794 and 1691kg, respectively. The FCR dropped from 1.6 in the first to 1.27 in the second crop. Total production per hectare per year reached 3485kg in two-crop farms. Shrimps in one-crop farms were harvested mainly at DOC 145. The mean production per ha/year and FCR of one-crop farms reached 2089kg and 1.65 respectively. We harvested around 47114kg of shrimps in each two-crop farm which was 17 tons more than one-crop farms. The results of this study showed that production of shrimps in two crops a year system could be continued with pre-designed schedules. We presented a time table for two crops a year culture system.
    Schlagwort(e): Aquaculture ; Shrimp Farming ; Indian White Shrimp ; Fenerropenaeus indicus ; Persian Gulf ; Gwatar ; Iran
    Repository-Name: AquaDocs
    Materialart: article , TRUE
    Format: application/pdf
    Format: application/pdf
    Format: 139-148
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    ARTIKEL (OA)
  • 4
    Digitale Medien
    Digitale Medien
    Formation and diffusion behavior of intermixed and segregated amorphous layers in sputtered NiCr films on Si (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4023-4029 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Sputter-deposited Ni80Cr20 films on sputter-cleaned Si substrates contain an amorphous layer at the substrate/film interface whose composition is a mixture of all the elements present at the interface. Subsequent thermal processing at 300 °C for 30 min produces a new segregated Cr-rich amorphous layer as Ni atoms preferentially diffuse through and react with the initial amorphous layer and the silicon substrate. Further annealing results in the growth of uniform nanoscale NiSi layers, as long as the segregated a layer is sustained. The amorphous layers eventually crystallize at ∼500 °C and Kirkendall voids are observed at 550 °C. Whereas the formation of intermixed amorphous layers from metal–metal or metal–silicon systems has been reported by several authors, the segregated amorphous layer arising out of the interdiffusion and reaction between a metal alloy and Si is of both fundamental and technological interest due to its thermal stability and ability to control the silicide growth. In this work, we describe the evolution of both kinds of amorphous layers, i.e., intermixed and segregated, so as to elucidate their origins. The evolution of the two a layers is also observed when monolayers of Pt are introduced prior to NiCr deposition. In this case, the growth of the segregated amorphous layer is retarded and it dissolves earlier during thermal annealing.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.352869
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  • 5
    Digitale Medien
    Digitale Medien
    Deposition of copper oxide thin films on different substrates by pulsed excimer laser ablation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3765-3769 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Stoichiometric films of cupric and cuprous oxide are deposited on Si, MgO, and Y-ZrO2 substrates by pulsed excimer laser ablation technique. It is found that the equilibrium phase diagram based considerations dictate the phase formation. The films are characterized by small-angle x-ray diffraction, infrared, and UV-visible spectroscopies and Rutherford backscattering spectroscopy. It is shown that epitaxy of Cu2O films can be realized on single crystal MgO (100) substrates and the corresponding film resistivity is of the order of 40–60 Ω cm.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.352271
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  • 6
    Digitale Medien
    Digitale Medien
    Conductivity-type inversion following low-energy hydrogen implantation (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1985-1987 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A surface conductivity-type inversion has been observed following low-energy (400 eV), high-dose, hydrogen implantation of p-type silicon. Detailed structural, chemical, and electrical examination of the surface revealed that the inversion resulted from hydrogen forming n-type complexes with extended defects.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.105040
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  • 7
    Digitale Medien
    Digitale Medien
    NiSi formation through a semipermeable membrane of amorphous Cr(Ni) (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 729-731 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Following heat treatments of Pt encapsulated Ni80Cr20 thin films on silicon substrates at temperatures ranging from 300 to 500 °C, it has been discovered that Cr atoms segregate at the original NiCr/Si interface to form an amorphous layer, while Ni atoms diffuse into the Si to form Ni silicide. The Cr-rich amorphous layer acts as a "semipermeable membrane'' which selectively passes Ni to form a very uniform NiSi layer.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104529
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  • 8
    Digitale Medien
    Digitale Medien
    Mechanisms of epitaxial CoSi2 formation in the multilayer Co/Ti-Si(100) system (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2241-2243 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We describe how the unique growth environment provided by a multilayer Co/Ti(O)-Si structure leads to the formation of epitaxial CoSi2/Si(100). A key factor is the preferential nucleation of (311) CoSi which is the dominant phase from 650 to 800 °C in this multilayer system. Epitaxial CoSi2 then nucleates at the (311) CoSi/(100) Si interface and grows during a 900 °C second annealing. Having Ti as the first layer in contact with the Si substrate reduces the native Si oxide and residual impurities. The amorphous Ti(O) provides a uniform supply of slowly diffusing Co that promotes preferential CoSi formation. The upper Co and Ti layers serve to stabilize the reaction and suppress agglomeration.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.111657
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  • 9
    Digitale Medien
    Digitale Medien
    Spatially confined nickel disilicide formation at 400 °C on ion implantation preamorphized silicon (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3173-3175 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The localized formation of continuous silicide layers via solid state reaction of nickel atoms with ion implantation preamorphized silicon is described. Ni films 12 nm thick were evaporated on 65 nm deep amorphized surface layers. The silicidation reaction was induced by two stage thermal annealing at 360 and 400 °C, well below the solid phase epitaxial regrowth temperature for amorphous Si and the normal NiSi2 formation temperature. Rutherford backscattering with channeling, XTEM, and four-point-probe measurements were used to determine the structure, interfacial morphology, composition, and resistivity of the silicide films. After the lower temperature annealing stage a continuous layer of NiSi2 is formed with an underlying residual amorphous region located above the crystalline substrate. During a second annealing the residual amorphous areas recrystallize epitaxially with respect to the substrate via lateral silicide growth. The process leads to formation of a continuous 35 nm thick nickel disilicide layer completely confined within the original amorphous region. Silicide resistivity was 44 μΩ cm. The process may be viewed as a low-temperature process enhancement to self-aligned silicide (SALICIDE) technology since silicide growth proceeds only on preamorphized areas of the silicon substrate.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.110214
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  • 10
    Digitale Medien
    Digitale Medien
    Nanoscale CoSi2 contact layer growth from deposited Co/Ti multilayers on Si substrates (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1519-1521 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this letter, we describe procedures for forming continuous, planar, and thermally stable 12-nm-thick CoSi2 layers via Co/Si interaction through an interfacial Ti(O) diffusion barrier layer. Three Co and three Ti layers were deposited sequentially on Si-(100) substrates by dual source thermal evaporation with Ti as the first layer. Oxygen was found to be selectively incorporated into all Ti layers during deposition. Following a 550 °C, 2 h anneal the morphology of the silicide layer depended strongly on the thickness of the initial Ti(O) layer. For an initial Ti(O) layer of ∼5 nm, both Co and Si readily diffused to form a Co silicide interfacial layer with a very rough, faceted interface. Increasing the Ti(O) thickness to ∼10 nm stopped Si out diffusion and reduced Co in diffusion such that a uniform 6 nm CoSix interfacial layer formed. Selective removal of the upper layers and a 750/800 °C annealing produced a 12 nm CoSi2 layer with a resistivity of ∼28 μΩ cm.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.108465
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