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  • 1
    Electronic Resource
    Electronic Resource
    Effect of intermediate vibration in ceramic superconductor YBa2Cu3Ox (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1547-1549 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transport critical current density Jc in the ceramic superconductor YBa2Cu3Ox was improved by an intermediate vibration introduced during the preparation process. A dependence of Jc on the vibrational parameters, frequency and amplitude, was found. The improved Jc was shown to be accompanied by the enhancement in the orientation degree. Furthermore, a theoretical discussion was tried to explain the Jc dependence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347247
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  • 2
    Electronic Resource
    Electronic Resource
    Photoreflectance characterization of AlGaAs/GaAs modulation-doped heterostructures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2355-2360 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance (PR) and reflectance have been applied to characterize undoped and modulation-doped heterostructures of AlGaAs/GaAs grown by metal-organic chemical vapor deposition. The PR spectra were taken on these samples after sequential etching steps in a phosphoric acid etch to study the effects of the surface electric field, the heterointerface, and the two-dimensional electron gas. PR spectra were also taken with an external electric field applied through a transparent gate electrode. The results show that the oscillations appearing near the bandgap energy of GaAs are Franz–Keldysh oscillations originating from the large surface electric field. The surface electric field of the heterostructures can be modified through the application of an external electric field or by etching. The oscillation period is observed to increase with increasing reverse bias or with etching of the GaAs cap layer and the PR features disappear at a forward bias of 0.45 V. The very sharp features associated with the GaAs bandgap energy after etching have also been verified to be Franz–Keldysh oscillations and the presence of a two-dimensional electron gas cannot be confirmed with PR.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346544
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  • 3
    Electronic Resource
    Electronic Resource
    Laser induced oxygen adsorption and intensity degradation of porous Si (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3841-3842 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For light-emitting porous Si there has been a severe problem with instability and degradation in the light emission. We performed in situ photoluminescence measurements to monitor the degradation process under ambient atmosphere of different gases and in ultrahigh-vacuum environment. We found that laser induced oxygen adsorption is the major cause for the light emission degradation, while the laser heating effect can be excluded. We also found the degraded intensity can be partially recovered by reducing the surface oxygen concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352288
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  • 4
    Electronic Resource
    Electronic Resource
    Strong-field effect in nanofabrication on chemically prepared silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4721-4723 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the uniformity of scanning tunneling microscope nanofabrication on as-prepared chemically etched silicon. Our results show that continuous fabrication produces isolated nanoscale dots along the motion of the tip rather than uniform lines. These results are discussed with the aid of a self-limiting strong-field effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352746
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  • 5
    Electronic Resource
    Electronic Resource
    Rotational, fine, and hyperfine structure in the high-resolution electronic spectrum of ArOH and ArOD (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 7086-7098 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A number of vibrational bands of the A˜ 2Σ+↔X˜ 2Π electronic spectrum of both ArOH and ArOD have been investigated by laser induced fluorescence with a high-resolution, pulsed laser system yielding linewidths (approximately-less-than)250 MHz in the UV. This spectrum not only displays completely resolved rotational structure, but also fine and hyperfine structure. The hyperfine constants and precise interatomic distances derived from the rotational constants provide a very interesting picture of the electronic and geometric structure of the complex. The bonding is incipiently chemical in the A˜ state with clear evidence for at least some electronic reorganization between Ar and the open-shell OH radical in the complex. Conversely, the X˜ state appears to be bound almost solely by physical van der Waals interactions characteristic of systems containing only closed-shell species.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.461437
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  • 6
    Electronic Resource
    Electronic Resource
    The effect of finite film thickness on the surface segregation in symmetric binary polymer mixtures (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 656-663 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We report neutron reflectivity and dynamic secondary ion mass spectroscopy measurements of surface segregation from symmetric, isotopic polystyrene blends, spin coated onto oxide covered silicon wafers, as a function of film thickness. The results of this analysis show that the segments of the deuterated polymer always partition to both the air and the substrate interfaces. Furthermore, the surface segregation is affected significantly if the film thicknesses are reduced below ∼four times the correlation length in the systems, and the segregation to both surfaces decreases with decreasing thickness. These results are in good agreement with the predictions of a mean-field lattice model which incorporates composition and chain length independent values of the surface energy parameter χs at each surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465738
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  • 7
    Electronic Resource
    Electronic Resource
    Friction effects in the deflection of atomic force microscope cantilevers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 394-399 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The conventional deflection-mode atomic force microscope operates by optically monitoring the slope near the end of a microcantilever in contact with the sample surface. This signal is usually interpreted as a measure of height change. Lateral forces from friction, surface geometry, or inclination of the cantilever to the surface also affect the slope due to cantilever buckling. We calculate the deflection of a hollow triangular model cantilever subject to both lateral and normal forces. The measured response of the servo circuit to an inclined, loaded cantilever is then determined. This shows (1) errors are always present in height measurements of structures on inhomogeneous surfaces; (2) the sensitivity to buckling can be reduced by repositioning the laser; (3) friction measurements can be accurately made by scanning in two directions and applying the proper calibration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145144
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  • 8
    Electronic Resource
    Electronic Resource
    Studies on diamondlike carbon films for antireflection coatings of infrared optical materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 705-707 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamondlike carbon (DLC) films were directly deposited onto germanium (Ge) and zinc sulphide (ZnS) slices by a capacitively coupled 13.56 MHz rf glow discharge plasma with Ar-C2H2 gas mixtures. The IR transmittance was measured using a Fourier-transform infrared spectrometer. The maximum values of the IR transmission of Ge and ZnS with DLC films on both sides are 99% and 95.8%, respectively, which come up to the theoretical values. A nonuniform DLC film, of which the refractive index gradually changes along the thickness, has been successfully deposited onto a Ge slice for the first time and the IR transmission of a nonuniform DLC film coated onto both sides of a Ge substrate at the wider wave band of 2.5–15 μm is over 85%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357813
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  • 9
    Electronic Resource
    Electronic Resource
    Inverted pseudomorphic high electron mobility heterostructures by atmospheric pressure metalorganic chemical vapor deposition (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 71-73 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Inverted pseudomorphic high electron mobility transistor (HEMT) and inverted HEMT heterostructures are demonstrated by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) for the first time and characterized by transmission electron microscopy (TEM), variable temperature Hall effect, and Shubnikov–de Haas measurements. TEM micrographs of both structures show distinct and sharp heterojunction interfaces without indications of interface roughness at the AlGaAs/channel layer interface. Variable temperature Hall effect measurements reveal a monotonic increase in mobility as the temperature is lowered. For the inverted HEMT, the mobility at 15 K is 90 000 cm2/V s with a sheet density of 8.2×1011 cm−2. The mobility of the inverted pseudomorphic HEMT at 15 K is 73 000 cm2/V s with a sheet density of 1.5×1012 cm−2. Shubnikov–de Haas measurements at 4.2 K in magnetic fields up to 18.5 T show clear magnetoresistance oscillations and plateaus in the quantum Hall effect confirming the existence of a two-dimensional electron gas. Fast Fourier power transform of the magnetoresistance versus magnetic field shows two subband levels with a total sheet density of 8.7×1011 cm−2 for the inverted HEMT and a total sheet density of 1.55×1012 cm−2 for the inverted pseudomorphic HEMT in close agreement to the variable temperature Hall effect measurement results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104448
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  • 10
    Electronic Resource
    Electronic Resource
    Growing a periodic microstructure on the superconductor crystal surface by electrocrystallization (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1155-1157 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel microstructure is formed on the single crystal surfaces of the oxide superconductor Ba0.6K0.4BiO3 (BKBO). Micron-sized barium islands periodically grew on the mother crystal during electrocrystallization of BKBO. Experimental analysis suggested the relation of this unusual microstructure to the Liesegang rings well-known for a crystal growth in gels. The present discovery provides a potential technology for fabricating microstructures on substrates of solids. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120999
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