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  • 1
    Online-Ressource
    Online-Ressource
    Cambridge :Cambridge University Press,
    Schlagwort(e): Astronomical instruments. ; Gravitational waves -- Measurement -- Instruments. ; Laser interferometers. ; Gravimeters (Geophysical instruments). ; Electronic books.
    Beschreibung / Inhaltsverzeichnis: Describing the physics of gravitational waves and their detectors, this book is a valuable reference for graduate students and researchers in physics and astrophysics. Case studies of large scale gravitational wave detectors introduce the technology and set the scene for a review of the experimental issues involved in creating detectors.
    Materialart: Online-Ressource
    Seiten: 1 online resource (346 pages)
    Ausgabe: 1st ed.
    ISBN: 9781139230506
    DDC: 522/.68
    Sprache: Englisch
    Anmerkung: Cover -- ADVANCED GRAVITATIONAL WAVE DETECTORS -- Title -- Copyright -- In memory of Stefano Braccini, our co-author and respected colleague. -- Contents -- Contributors -- Foreword -- Preface -- Introduction -- Part 1 An introduction to gravitational wave astronomy and detectors -- 1 Gravitational waves -- 1.1 Listening to the Universe -- 1.2 Gravitational waves in stiff-elastic spacetime -- 1.3 The luminosity of gravitational waves -- 1.4 The amplitude and frequency of gravitational wave sources -- 1.5 Gravitational waves in general relativity -- 1.6 Gravitational wave detector response and signal strength -- References -- 2 Sources of gravitational waves -- 2.1 Introduction -- 2.2 Rough guide to signal amplitudes -- 2.3 Supernovae -- 2.4 Neutron star coalescence -- 2.5 Rates of coalescing compact binaries -- 2.6 Gravitational wave standard sirens -- 2.7 Gravitational waves and gamma-ray bursts -- 2.8 Continuous gravitational wave sources -- 2.9 Low-frequency sources -- 2.10 Stochastic background from the era of early star formation -- 2.11 Cosmological gravitational waves from the Big Bang -- References -- 3 Gravitational wave detectors -- 3.1 Introduction -- 3.2 Introducing gravitational wave detectors across the spectrum -- 3.3 Key concepts in gravitational wave detection -- 3.4 Detectors from nanohertz to kilohertz -- 3.5 Introduction to terrestrial interferometers -- 3.6 Conclusion -- References -- 4 Gravitational wave data analysis -- 4.1 Introduction -- 4.2 Source amplitudes vs sensitivity -- 4.3 Matched filtering and optimal signal-to-noise ratio -- 4.4 Practical applications of matched filtering -- 4.5 Suboptimal filtering methods -- 4.6 False alarms, detection threshold and coincident observation -- 4.7 Detection of stochastic signals by cross-correlation -- 4.8 Network detection -- References. , 5 Network analysis and multi-messenger astronomy -- 5.1 Introduction -- 5.2 Network analysis -- 5.3 General approach for discretised data -- 5.4 Angular resolution of a detector network -- 5.5 Multi-messenger gravitational wave astronomy -- References -- Part 2 Current laser interferometer detectors-- three case studies -- 6 The Laser Interferometer Gravitational-Wave Observatory -- 6.1 Introduction -- 6.2 The LIGO detectors -- 6.3 Detector description -- 6.4 Instrument performance -- 6.5 Future directions -- References -- 7 The Virgo detector -- 7.1 Introduction -- 7.2 Virgo overall design -- 7.3 The Virgo subsystems -- 7.4 Interferometer commissioning -- 7.5 Virgo+ upgrades -- 7.6 Towards the next generation -- References -- 8 GEO 600 -- 8.1 A bit of history -- 8.2 GEO 600 techniques -- 8.3 The status in late 2009 -- 8.4 Upgrade plans -- 8.5 In the future -- References -- Part 3 Technology for advanced gravitationalwave detectors -- 9 Lasers for high optical power interferometers -- 9.1 Requirements on the light source of a gravitational wave detector -- 9.2 Lasers for advanced gravitational wave detectors -- 9.3 Laser stabilisation -- 9.4 Lasers for third generation interferometers -- References -- 10 Thermal noise, suspensions and test masses -- 10.1 Introduction -- 10.2 Suspension thermal noise -- 10.3 Test mass thermal noise -- 10.4 Coating loss -- References -- 11 Vibration isolation -- 11.1 Planned isolation platforms for Advanced LIGO -- 11.2 Achieving isolation -- 11.3 Conclusions -- 11.4 Design goals and philosophy -- 11.5 Cascade stages -- 11.6 Control hardware -- 11.7 Control scheme -- 11.8 Conclusion -- References -- 12 Interferometer sensing and control -- 12.1 Introduction -- 12.2 Mathematical background -- 12.3 Length sensing and control -- 12.4 Angular sensing and control -- 12.5 Local control system. , 12.6 Modulation frequencies calculations -- 12.7 Readout scheme -- References -- 13 Stabilising interferometers against high optical power effects -- 13.1 Introduction -- 13.2 Thermal lensing and control -- 13.3 Sidles--Sigg instability -- 13.4 Parametric instability -- 13.5 Parametric instability theory and modeling -- 13.6 Possible approaches to PI control -- 13.7 Conclusion -- References -- Part 4 Technology for third generation gravitational wave detectors -- 14 Cryogenic interferometers -- 14.1 Introduction -- 14.2 Material properties at low temperature -- 14.3 Reduction of mirror thermal noise -- 14.4 Elimination of thermal aberration -- 14.5 LCGT -- 14.6 Conclusion -- References -- 15 Quantum theory of laser interferometer GW detectors -- 15.1 Introduction -- 15.2 An order-of-magnitude estimate -- 15.3 Basics for analysing quantum noise -- 15.4 Quantum noise in a GW detector -- 15.5 Derivation of the SQL: A general argument -- 15.6 Beating the SQL by building correlations -- 15.7 Optical spring: Modification of test mass dynamics -- 15.8 Continuous state demolition: Another viewpoint on the SQL -- 15.9 Speed meters -- 15.10 Conclusions -- References -- 16 ET: A third generation observatory -- 16.1 Introduction to the third generation of GW observatories -- 16.2 Scientific potential of a third generation GW observatory -- 16.3 Third generation sensitivity: How to suppress the noises limiting the advanced GW detectors -- 16.4 Scenarios and timeline for the third generation -- References -- Index.
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  • 2
    facet.materialart.
    Unbekannt
    PANGAEA
    In:  Supplement to: Evan, Amato T; Fiedler, Stephanie; Zhao, C; Menut, E; Schepanski, Kerstin; Flamant, C; Doherty, O (2015): Derivation of an observation-based map of North African dust emission. Aeolian Research, 16, 153-162, https://doi.org/10.1016/j.aeolia.2015.01.001
    Publikationsdatum: 2023-07-06
    Beschreibung: Changes in the emission, transport and deposition of aeolian dust have profound effects on regional climate, so that characterizing the lifecycle of dust in observations and improving the representation of dust in global climate models is necessary. A fundamental aspect of characterizing the dust cycle is quantifying surface dust fluxes, yet no spatially explicit estimates of this flux exist for the World's major source regions. Here we present a novel technique for creating a map of the annual mean emitted dust flux for North Africa based on retrievals of dust storm frequency from the Meteosat Second Generation Spinning Enhanced Visible and InfraRed Imager (SEVIRI) and the relationship between dust storm frequency and emitted mass flux derived from the output of five models that simulate dust. Our results suggest that 64 (±16)% of all dust emitted from North Africa is from the Bodélé depression, and that 13 (±3)% of the North African dust flux is from a depression lying in the lee of the Aïr and Hoggar Mountains, making this area the second most important region of emission within North Africa.
    Materialart: Dataset
    Format: application/zip, 9.7 kBytes
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 328-336 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: After terminating electrical stresses, the generation of interface states can continue. Our previous work in this area indicates that the interface state generation following hole injection originates from a defect. These defects are inactive in a fresh device, but can be excited by hole injection and then converted into interface states under a positive gate bias after hole injection. There is little information available on these defects. This article investigates how they are formed and attempts to explain why they are sensitive to processing conditions. Roles played by hydrogen and trapped holes will be clarified. A detailed comparison between the interface state generation after hole injection in air and that in forming gas is carried out. Our results show that there are two independent processes for the generation: one is caused by H2 cracking and the other is not. The rate limiting process for the interface state generation after hole injection is discussed and the relation between the defects responsible for this generation and hole traps is explored. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1911-1919 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: This article investigates the H2-anneal induced positive charge generation in the gate oxide of metal-oxide-semiconductor field-effect transistors fabricated by a submicron complementary metal-oxide-semiconductor process. A significant number (∼1012 cm−2) of fixed and mobile positive charges are generated at 450 °C. Properties (reactivity, electrical and thermal stability) of these positive charges are compared with the positive charges observed in the buried oxide of silicon-on-insulator devices. The differences in these two are investigated, in terms of their transportation time across the oxide, uniformity and sources of hydrogen. Attention is paid to the role played by boron in the generation and the possible connection between the positive species observed here and the defects responsible for the positive bias temperature instability. Efforts are made to explain the difference in reactivity between the H2-anneal induced positive species and the hydrogenous species released by irradiation or electrical stresses. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2448-2449 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Mach–Zehnder (MZ) waveguide interferometers integrated on SOI (silicon on insulator) for 1.3 μm operation are studied on the basis of the large cross-section single-mode rib waveguide condition and the free-carrier plasma dispersion effect in Si wafer direct bonding SOI by back-polishing. And the MZ interferometers are fabricated by using KOH anisotropic etching. Their insertion losses and modulation depths are measured to be 4.81 dB and 98%, respectively, at the wavelength of 1.3 μm when a forward bias voltage applied to a p+n junction is 0.95 V and the active zone length of the MZ interferometers is 816.0 μm. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 2773-2776 
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: In this article we report the successful locking and operation of an 8 m Michelson interferometer which uses multistage cantilever spring vibration isolators. The control system for normal mode damping is described. The performance and dominant noise sources of this interferometer are discussed. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
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  • 7
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: It is well known that Si surface treatment is crucial for low-temperature Si epitaxy. Although considerable work exists which is aimed at elucidating the effects of Si surface pretreatments on Si epitaxy, little is known about the effects of SiO2 surface pretreatments for polycrystalline silicon (poly-Si) growth. We report on a study of SiO2 surface pretreatment effects on poly-Si nucleation and film surface roughness using a low energy hydrogen ion beam (200 eV) and H2 gas annealing (850 °C) in a rapid thermal chemical vapor deposition system. In situ real-time ellipsometry was used to monitor the surfaces during pretreatment and observe the nucleation. The microstructure and surface roughness of the deposited poly-Si films are determined by analysis of in situ spectroscopic ellipsometry (SE) and atomic force microscopy (AFM) measurements. Hydrogen ion beam pretreatment was found to produce higher nuclei density and a smoother poly-Si surface than nonpretreated substrates, and the opposite was found for hydrogen gas annealing giving lower nuclei density and rougher poly-Si. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1735-1735 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2374-2376 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Miscibility is a key factor for maintaining the homogeneity of the amorphous structure in a ZrO2–Al2O3 binary alloy high-k dielectric layer. In the present work, a ZrO2/Al2O3 laminate thin layer has been prepared by atomic layer chemical vapor deposition on a Si (100) wafer. This layer, with artificially induced inhomogeneity (lamination), enables one to study the change in homogeneity of the amorphous phase in the ZrO2/Al2O3 system during annealing. High temperature grazing incidence x-ray diffraction (HT-XRD) was used to investigate the change in intensity of the constructive interference peak of the x-ray beams which are reflected from the interfaces of ZrO2/Al2O3 laminae. The HT-XRD spectra show that the intensity of the peak decreases with an increase in the anneal temperature, and at 800 °C, the peak disappears. The same samples were annealed by a rapid thermal process (RTP) at temperatures between 700 and 1000 °C for 60 s. Room temperature XRD of the RTP annealed samples shows a similar decrease in peak intensity. Transmission electronic microscope images confirm that the laminate structure is destroyed by RTP anneals and, just below the crystallization onset temperature, a homogeneous amorphous ZrAlxOy phase forms. The results demonstrate that the two artificially separated phases, ZrO2 and Al2O3 laminae, tend to mix into a homogeneous amorphous phase before crystallization. This observation indicates that the thermal stability of ZrO2–Al2O3 amorphous phase is suitable for high-k applications. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 700-702 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Real time ellipsometry and atomic force microscopy (AFM) were used to measure critical nucleation parameters for polycrystalline silicon deposition on an amorphous SiO2 layer by rapid thermal chemical vapor deposition (RTCVD) using disilane (5% in helium). A particularly important parameter for selective epitaxial deposition is the time for nuclei to form, the incubation time. Quantitation of the nucleation parameters, such as the nuclei density, nuclei growth rate, nuclei coalescence, and an operational incubation time were determined from the real time ellipsometric measurements and confirmed by AFM. For a substrate temperature of 700 °C and at a chamber pressure of 0.2 Torr, the nuclei densities of 1.4×1010 nuclei/cm2, incubation time of 26 s and nuclei layer growth rates of 20 nm/min were obtained. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
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