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  • 1
    Online-Ressource
    Online-Ressource
    Singapore :Springer,
    Schlagwort(e): Quantum systems. ; Quantum computing. ; Electronic books.
    Materialart: Online-Ressource
    Seiten: 1 online resource (347 pages)
    Ausgabe: 1st ed.
    ISBN: 9789811912016
    Serie: Quantum Science and Technology Series
    DDC: 004.1
    Sprache: Englisch
    Anmerkung: Intro -- Preface -- Contents -- Diversity of Hybrid Quantum Systems -- 1 Introduction -- 2 Various Hybridizations -- 3 Sharpening of Each Technology -- 4 Importance of Material Development -- 5 Development of New Metrology -- 6 Concluding Remarks -- References -- Phonon Engineering for Quantum Hybrid Systems -- 1 Introduction -- 2 Fundamentals -- 3 Advanced Researches -- References -- Phonon Engineering of Graphene by Structural Modifications -- 1 Introduction -- 2 Phonon Dispersion in Graphene -- 3 Thermal Conductivity Measurement of 2D Materials by Raman Spectroscopy -- 4 Phonon Engineering of Graphene by Isotope Atoms -- 5 Graphene Isotopic Heterostructures -- 6 Heat Conduction of Graphene Isotopic Heterostructures -- 7 Isotopic Superlattice for Further Reduction in Heat Conduction -- 8 Phonon Engineering of Graphene by Defects -- 9 Electron-phonon Interaction of Graphene with Defects -- 10 Heat Conduction of Graphene with Defects -- 11 Concluding Remarks -- References -- On-Chip Wave Manipulations Enabled by Electromechanical Phononic-Crystal Waveguides -- 1 Introduction -- 1.1 Nano-/Micro-electromechanical Systems (N/MEMS) -- 1.2 Phononic Crystal (PnC) -- 1.3 Phononic Technology for Hybrid Quantum Systems -- 1.4 Electromechanical PnC -- 2 Device and Properties -- 2.1 Fabrication -- 2.2 Spectral Transmission Properties -- 2.3 Temporal Transmission Property -- 3 Temporal and Dynamic Control of Acoustic Waves -- 3.1 Waveform Engineering via Group Velocity Dispersion -- 4 Conclusion -- References -- Electron and Phonon Transport Simulation for Quantum Hybrid System -- 1 Introduction -- 2 Phonon Transport Simulation -- 2.1 NEGF Method -- 2.2 R-matrix Method -- 2.3 Simulation Examples -- 3 Electron Transport Simulation -- 3.1 NEGF Method -- 3.2 Equivalent Model -- 3.3 Simulation Example -- 4 Electron and Phonon Transport Simulation. , 4.1 NEGF Method -- 4.2 Simulation Example -- References -- Suspended Carbon Nanotubes for Quantum Hybrid Electronics -- 1 Introduction -- 2 Synthesis and Evaluation of Suspended Carbon Nanotube -- 2.1 Synthesis -- 2.2 Evaluation -- 3 Lattice Vibration Properties of Suspended Carbon Nanotubes -- 3.1 Radial Breathing Mode -- 3.2 Intermediate Frequency Mode -- 3.3 G Mode -- 4 Thermal Conductivity Measurement -- 4.1 Method -- 4.2 Analysis of Thermal Conductivity -- 5 Summary -- References -- Quantum Effects in Carbon Nanotubes: Effects of Curvature, Finite-Length and Topological Property -- 1 Introduction -- 2 Basics of Electronic Property of Carbon Nanotubes -- 2.1 Geometrical Structure of Nanotubes -- 2.2 Electronic Property of a Graphene -- 2.3 Cutting Lines and Electronic Property of a Nanotube -- 2.4 Angular Momentum and Cutting Line -- 2.5 1D Lattice Model -- 3 Curvature Induced Effects -- 3.1 Curvature-Induced Energy Gap in the Metallic Nanotubes -- 3.2 Spin-Orbit Interaction -- 3.3 Asymmetric Velocities -- 4 Electrons in Finite-Length Nanotubes -- 4.1 Discrete Energy Levels -- 4.2 Nanotubes as Topological Matters -- References -- Synthesis and Transport Analysis of Turbostratic Multilayer Graphene -- 1 Introduction -- 2 Multilayer Graphene Fabricated by the Solid-Template Process -- 3 Multilayer Graphene Nanoribbon -- 4 Multilayer Graphene Synthesized from Graphene Oxide Materials -- 5 Conclusion and Future Perspectives -- References -- Quantum Anomalous Hall Effect in Magnetic Topological Insulator -- 1 Introduction -- 2 Topological Insulator -- 3 Experimental Observation of Quantum Anomalous Hall Effect -- 4 Various Phases of Magnetic Topological Insulator -- 5 Future Prospective -- References -- Transport Properties and Terahertz Dynamics of Single Molecules -- 1 Introduction -- 2 Forming Electrical Access to Single Molecules. , 2.1 Scanning Tunneling Microscopy -- 2.2 Mechanical Break Junction Method -- 2.3 Electrical Break Junction Method -- 2.4 Single Molecule Transistors -- 3 Terahertz Spectroscopy at a Single Molecule Level -- 3.1 Focusing Terahertz Electric Fields by Nanogap Electrodes -- 3.2 Gigantic Enhancement of Terahertz Electric Fields in Nanogaps -- 3.3 Excitation of Molecular Vibrations by Terahertz Radiation in Single Molecule Transistors -- 3.4 Ultrafast Vibration of a Single Fullerene Molecule -- 3.5 Effect of Single Electron Charging on the Electronic Structures of Single Molecules -- 3.6 Rattling Motion of a Single Atom Encapsulated in a Fullerene Cage -- 3.7 Single Molecule Terahertz Spectroscopy Using Scanning Tunneling Probes -- 4 Summary -- References -- Novel Phonon Generator and Photon Detector by Single Electron Transport in Quantum Dots -- 1 Introduction -- 2 Single Phonon Generator by Double Quantum Dot -- 2.1 Electron-Phonon Interaction in Single Quantum Dot -- 2.2 LO Phonon Generator by Double Quantum Dot -- 2.3 Phonon Lasing and Antibunching -- 3 THz Photon Detector by Quantum Dot Array -- 3.1 Electron-Photon Interaction in Quantum Dot -- 3.2 Formulation of Photocurrent Through Single Quantum Dot -- 3.3 Dicke Effect on Photocurrent Through an Array of Quantum Dots -- 4 Conclusions -- References -- Hyperfine-Mediated Transport in a One-Dimensional Channel -- 1 Introduction -- 2 Quantum Point Contacts -- 3 1D Magnetotransport -- 4 Dynamic Nuclear Polarization in GaAs Point Contacts -- 5 RDNMR Lineshapes in a Quantum Point Contact -- 6 Structural Lattice Deformation -- 7 Overtone RDNMR -- 8 Spin Dynamics in 1D Semiconductor Devices -- 9 Electron Spin Polarization in a 1D System -- References -- Microscopic Properties of Quantum Hall Effects -- 1 Introduction -- 1.1 Outline -- 1.2 Quantum Hall Effect. , 1.3 Resistively Detected Nuclear Magnetic Resonance in QH Effect -- 1.4 Nuclear Electric Resonance of Quadrupolar Nuclei -- 1.5 Resistively Detected Knight-Shift Measurement in QH Effect -- 2 Scanning Probe Techniques -- 2.1 Scanning Gate Imaging -- 2.2 Nonequilibrium-Transport-Assisted Scanning Gate Imaging -- 2.3 Scanning Nuclear Resonance Imaging -- 3 Microscopic Properties of Quantum Hall Electronic System -- 4 Microscopic Observation of Hyperfine-Coupled Quantum Hall Systems -- 4.1 Local NR and Resistive Detection -- 4.2 NR Spectroscopy Mapping -- 5 Summary and Outlook -- References -- Semiconductor Chiral Photonic Crystal for Controlling Circularly Polarized Vacuum Field -- 1 Introduction -- 2 Chiral Photonic Crystals -- 3 Three-Dimensional Chiral Woodpile Photonic Crystals -- 3.1 Chiral Woodpile Structures -- 3.2 Fabrication of Semiconductor-Based Chiral Photonic Crystals -- 3.3 Optical Activity -- 4 QD Light Emission in Engineered Circularly Polarized Vacuum Field -- 4.1 Numerical Analysis on the Emission Properties -- 4.2 Measurement Setups -- 4.3 Degree of Circular Polarization in Emission -- 4.4 Radiative Lifetime of Circularly Polarized Components -- 4.5 Discussion -- 5 Summary -- References -- Hybrid Structure of Semiconductor Quantum Well Superlattice and Quantum Dot -- 1 Quantum Well and Quantum Well Superlattice -- 2 Quantum Dot -- 3 Hybrid Structure of Semiconductor Quantum Well Superlattice and Quantum Dot -- References.
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  • 2
    ISSN: 1520-4804
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
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  • 3
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The detailed structure of erbium (Er) sheet-doped GaAs grown by molecular-beam epitaxy is directly determined by analysis of the ion-channeling spectra in the [100], [110], and [111] directions with 2.0 MeV He+ beams followed by a recently developed Monte Carlo simulation. It is shown that Er atoms form NaCl-type crystalline ErAs clusters in the GaAs epitaxial layer at 500 and 580 °C. The clusters grow in the [100] direction with the common three principal axes of the cubic unit cell; the lattice constant of the clusters coincides exactly with that of the zinc-blende-type crystalline GaAs epitaxial layer. The shape and size of the clusters can be roughly deduced in the simulation from the dependence of the visible Er fraction on the cluster size for various cluster shapes. These results are consistent with those obtained by cross-sectional transmission electron microscopy. Almost all Er atoms are located precisely in tetrahedral interstitial sites with 0.1 A(ring) standard deviation; only 2% of the Er atoms occupy random sites. These results mean that the lattice constant of the crystalline ErAs clusters is compressed to that for the crystalline GaAs host during the cluster formation. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
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  • 4
    ISSN: 1520-4995
    Quelle: ACS Legacy Archives
    Thema: Biologie , Chemie und Pharmazie
    Materialart: Digitale Medien
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  • 5
    ISSN: 1520-4995
    Quelle: ACS Legacy Archives
    Thema: Biologie , Chemie und Pharmazie
    Materialart: Digitale Medien
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  • 6
    ISSN: 1520-4995
    Quelle: ACS Legacy Archives
    Thema: Biologie , Chemie und Pharmazie
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1753-1759 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The desorption of As from GaAs (001), (111)B, and AlAs(001) is studied in detail by measuring the electron-beam current reflected from these surfaces. When the As supply to the surface was terminated, the electron specular reflectivity decreases exponentially with time due to the As desorption. The decay rate was much smaller for AlAs (001) than for GaAs (001) and (111)B, which indicates stronger atomic bonding for AlAs than for GaAs. For the GaAs (001) surface, the decay rate and the activation energy for the decay in specular reflectivity change discontinuously at the transition between (2×4) and (3×1) reconstructions. This shows the As desorption process is sensitive to the transition of surface reconstruction. The dependence of the As desorption rate on the thickness of the top GaAs layer in GaAs/AlAs heterostructures indicates an abrupt change of bond strength near the interface.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1610-1615 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: An InAs monolayer is grown between GaAs layers using migration-enhanced epitaxy. The surface chemical characteristics during growth are investigated by reflection high-energy electron diffraction. With low As4 pressure and with a substrate temperature of 500 °C, the oscillation amplitude of the reflected electron beam after growth of one monolayer of InAs vanishes during the growth of GaAs over more than 20 atomic layers. High-resolution secondary-ion-mass spectroscopic analysis and photoluminescence characteristics of fabricated structures indicate an anomalous distribution of In atoms with a gradual slope toward the growth direction only when the substrate temperature is 500 °C. Numerical calculation shows that the experimental results are explained by the In atoms in the InAs monolayer being replaced by subsequently deposited Ga atoms. The comparison between experimental results and calculated ones indicates that replacement occurs with a probability of 98% at 500 °C. An InGaAs layer was also grown on an InP substrate using migration-enhanced epitaxy with the deposition of two monolayer metallic atoms per one cycle. X-ray diffraction analysis shows that the composition is modulated with a period of two monolayers in the grown InGaAs layer. This phenomenon is also explained in terms of metallic atom replacement.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2372-2374 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We fabricated semiconducting free-standing-beam and Hall-bar structures with a high slenderness ratio, a minimum thickness of 50 nm, and a typical length of several tens of microns using InAs membranes processed from InAs/GaAs heterostructures. These structures showed clear electric conductivity without any intentional doping. We obtained the carrier concentration and mobility by means of standard Hall measurements, thus confirming that both parameters were much larger than those of as-grown heterostructure samples. These results indicate that this material system is promising for micro/nanoelectromechanical system applications. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 63-65 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have used scanning electron microscopy (SEM) for real-time-observation to compare the surface evolution during the early stage growth of GaAs with molecular beam epitaxy (MBE) and migration enhanced epitaxy (MEE), at the substrate temperature of 500 °C. Surface roughness during MEE growth is about 1 ML and much smaller than during MBE growth. Immediately after growth termination, monolayer steps can be seen and the surface recovers to initial smoothness in MEE, while islands do not disappear without higher temperature annealing in MBE. Present results confirm high surface atom mobility in MEE growth. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
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