In:
Journal of Applied Physics, AIP Publishing, Vol. 107, No. 2 ( 2010-01-15)
Abstract:
A radiation-induced leakage current model in deep submicron bulk silicon N-channel metal-oxide-semiconductor field effect transistor (NMOSFET) is proposed in this paper for circuit simulations. The model takes into account the impact of the substrate doping concentration, the angle of shallow trench isolation (STI) region, and the junction depth of source/drain, which can predict the off-state leakage current of the NMOSFET with STI region irradiated at different radiation doses. The model is verified by comparing with the experimental results. The model can be easily implemented into the circuit simulator to evaluate the impact of total ionizing dose effect on the performance of circuit.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2010
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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