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  • 1
    Publication Date: 2021-10-28
    Description: The presence of gas hydrates (GHs) increases the stiffness and strength of marine sediments. In elasto-plastic constitutive models, it is common to consider GH saturation (Sh) as key internal variable for defining the contribution of GHs to composite soil mechanical behavior. However, the stress-strain behavior of GH-bearing sediments (GHBS) also depends on the microscale distribution of GH and on GH-sediment fabrics. A thorough analysis of GHBS is difficult, because there is no unique relation between Sh and GH morphology. To improve the understanding of stress-strain behavior of GHBS in terms of established soil models, this study summarizes results from triaxial compression tests with different Sh, pore fluids, effective confining stresses, and strain histories. Our data indicate that the mechanical behavior of GHBS strongly depends on Sh and GH morphology, and also on the strain-induced alteration of GH-sediment fabrics. Hardening-softening characteristics of GHBS are strain rate-dependent, which suggests that GH-sediment fabrics dynamically rearrange during plastic yielding events. We hypothesize that rearrangement of GH-sediment fabrics, through viscous deformation or transient dissociation and reformation of GHs, results in kinematic hardening, suppressed softening, and secondary strength recovery, which could potentially mitigate or counteract large-strain failure events. For constitutive modeling approaches, we suggest that strain rate-dependent micromechanical effects from alterations of the GH-sediment fabrics can be lumped into a nonconstant residual friction parameter. We propose simple empirical evolution functions for the mechanical properties and calibrate the model parameters against the experimental data.
    Keywords: 550.78 ; Gas hydrate-bearing sediments ; High-pressure studies ; THCM modelling ; Geomechanics ; Slope stability ; Gas seeps
    Language: English
    Type: map
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 99 (1995), S. 1840-1842 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8835-8837 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (KNa)0.1(Sr0.6Ba0.4)0.9Nb2O6, or KNSBN, crystals have been grown with two different Mn concentrations: 0.02 wt % and 0.04 wt %. Two-wave mixing and self-pumped phase conjugation experiments were carried out on these crystals at 632.8 nm wavelength. The measured two-wave coupling gains for the 0.02 wt % and 0.04 wt % crystals are larger than 7 cm−1 and 9 cm−1, respectively, and the two-wave coupling time response is faster for the 0.4 wt % crystal. In addition, the self-pumped phase conjugation reflectivity of the 0.04 wt % crystal is measured to be as high as 70%. It is shown that the Mn dopant can increase effectively the absorption coefficient and enhance the photorefractive properties of KNSBN. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5465-5468 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We calculate the density of states (DOS) of a two-dimensional electron gas in the presence of an external magnetic field. We take into account the self-consistent screening of the impurity scattering and the Landau level coupling effects. Using realistic parameters, we find qualitative agreement with the existing experiments. Our calculated DOS is broad and fairly featureless with considerable overlap between the Landau levels and is quite different from the well-separated Landau levels derived from the short-range interaction model. This implies that the calculated level broadenings are much larger than that obtained from the short-range model.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1822-1825 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a theoretical investigation of the growth orientation dependence of valence-subband structures in ZnSxSe1−x/ZnyMg1−ySzSe1−z quantum wells grown in the [001], [115], [113], [112], and [111] directions. The results indicate that the in-plane effective mass of the heavy-hole subband in the [111]-oriented structure is substantially smaller than that in the [001] quantum wells. For applications to quantum-well lasers, the lighter effective mass will lead to a smaller threshold current density, and therefore a better laser performance. Our investigations should provide useful guidelines for the design of II-VI quantum-well blue lasers.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2512-2514 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of time-resolved studies on the exciton radiative decay in single-crystal GaN films grown by metalorganic chemical vapor deposition. Time-resolved photoluminescence (PL) measurements were performed on the samples at various temperatures from 10 to 320 K. The well-resolved near-band-edge luminescence features associated with free excitons and bound excitons in the GaN allow us to unambiguously determine their decay times. We found that the nonradiative recombination processes play an important role and dominate the decay of exciton population. The processes depend on the density of defects and impurities in the GaN samples. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1671-1673 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of infinite layer compounds were prepared by molecular beam epitaxy. Defect layers were incorporated into the structure in order to dope the infinite layer phase. Hole type doping is usually observed. Resistivity measurements show that the conduction mechanisms change gradually with increasing doping level, from activational type to variable range hopping (or a mechanism governed by the Coulomb interaction between localized electrons) and then further to a mechanism related to weak localization which can be described by Δρ=T−S, where the exponent S ranges from 0.5 to 1.5. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 2957-2958 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 455-461 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intrinsic excitonic transitions in GaN have been studied using a variety of spectroscopic measurements. Sharp spectral structures associated with intrinsic free excitons could be observed in photoluminescence, reflection, and absorption spectra. The energy positions of excitonic transitions in GaN epitaxial layers were found to be influenced by the residual strain resulting from lattice-parameter and thermal-expansion mismatches between the epilayers and the substrates. The values of the four principal deformation potentials of wurtzite GaN were derived by using the strain tensor components determined by x-ray measurements. The observation of spectral features involving the emission of LO phonons in absorption and photoluminescence excitation spectra at energies above exciton resonances indicate that a phonon-assisted indirect excitation process, which simultaneously generates a free exciton and a LO phonon, is a very significant and efficient process in GaN. The lifetime of the free excitons is found to be longer than the relaxation time of LO-phonon emission but much shorter than that of acoustic-phonon emission. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3158-3160 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present results of a time-resolved photoluminescence study of the dynamics of photoexcited carriers in AlxGa1−xN/GaN double heterostructures (DHs). The carrier dynamics including generation, diffusion, spontaneous recombination, and nonradiative relaxation were studied by examining the time decay of photoluminescence associated with the spontaneous recombination from the samples. The temporal evolution of the luminescence from the GaN active layers of the DH samples was found to be governed by a carrier–diffusion dominated capture process. The determination of the capture time for the carriers drift and diffusion into the GaN active region, in addition to the effective lifetimes of the spontaneous recombination for carriers in the AlGaN cladding layers and the GaN active region, allows an estimation of the diffusion constants for the minority carriers in the AlxGa1−xN cladding layers of the DHs. Our results yield a diffusion constant of 2.6 cm2/s for Al0.03Ga0.97N and 1.5 cm2/s for Al0.1Ga0.9N at 10 K. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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