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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 23 (1990), S. 280-283 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    Location Call Number Limitation Availability
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 5887-5889 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The hydrodynamic radii of two types of aggregates, diffusion-limited aggregation clusters (DLA) and bond-percolation clusters (BPC), are calculated by numerically solving the hydrodynamic interaction between different particles in the cluster. Though they have almost the same fractal dimensionality, DLA and BPC clusters exhibit different effective hydrodynamic scaling behaviors. For BPC, the ratio between the hydrodynamic radius and the radius of gyration, Rh/Rg, remains almost constant (1.14) for clusters of up to 900 particles; while for DLA the hydrodynamic radius Rh increases faster than the radius of gyration Rg, with Rh∼N0.45 for the same range of N.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 100 (1994), S. 2277-2288 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have simulated via molecular dynamics the interaction of F2 with the clean Si(100)-2×1 reconstructed surface. Using a Stillinger–Weber-type many-body potential with the Si–F interactions refit to ab initio data, we find that both vibrational and translational excitation of the incident F2 can lead to increased reactivity, but they do so in different ways. The dominant reaction channels are (a) F-atom abstraction, leading to the formation of one Si–F bond while the remaining fluorine atom is ejected away from the surface, and (b) dissociative chemisorption, where both fluorine atoms in the incident F2 molecule form Si–F bonds on the surface. Nonreactive scattering is almost never observed. As a result, enhanced reactivity is mainly characterized by an increase in dissociative chemisorption at the expense of F-atom abstraction and by a corresponding increase in the initial reaction probability S0. We find S0 ranges from 0.57±0.04 for the lowest excitation energies to 0.78±0.04 for the largest translational excitation of 20.9 kcal/mol. For cases where F-atom abstraction occurs, the exit velocities of fluorine atoms ejected from the surface are found to be independent of the incident F2 energy and with kinetic temperatures much higher than the surface temperature, suggesting that the exiting fluorine atom does not equilibrate with the surface, yet loses memory of its initial state. Finally, for dissociative chemisorption trajectories, we find that the adsite location of the two fluorine atoms is strongly dependent on the incident orientation.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 737-745 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Previous isothermal dynamics simulations of the interaction of F with Si(100) failed to predict any reaction beyond saturation of the surface dangling bonds. We show that this lack of reactivity was due to the overly repulsive nature of the empirical potential employed. We used the method of simulated annealing to fit a new analytic interaction potential to data from ab initio configuration interaction calculations. This potential was then utilized in isothermal molecular dynamics simulations to explore the mechanism by which fluorine begins to etch silicon. Calculated adsorption and reaction probabilities, as a function of both fluorine coverage and structure, reveal that the buildup of the fluorosilyl layer occurs via several competing reactions and that it does not follow a well defined reaction sequence. This competition creates disorder in the adsorbed fluorosilyl layer, which is shown to be an important precursor to continued reaction. Idealized ordered surface structures are shown to be unstable relative to highly disordered structures for coverages of more than 1.25 ML of fluorine.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 3240-3250 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The structures of the (100) surfaces of silicon and germanium generally have been interpreted in a static manner in the past. We present molecular dynamics (MD) simulations that show these surfaces to consist of a mixture of rapidly interconverting buckled and unbuckled dimers. Over a time average, the surface is found to have long p(2×1) rows of symmetric, unbuckled dimers, as seen in recent scanning tunneling microscopy images of silicon. However, higher order unit cells are observed in He scattering and low energy electron diffraction experiments at low temperatures. We present a dynamical interpretation of the structure to explain both sets of observations. The simulations have been performed on different size slabs at both constant energy and constant temperature utilizing a new method for effective removal of heat from an exothermic system while retaining the correct dynamics. Several different interaction potentials were analyzed in an attempt to find the most realistic one for simulations of these surfaces. The effect of surface defects and annealing were also investigated. The surface phonon densities of states were calculated and for Si(100) are in good agreement with experiments and other theoretical treatments. Such simulations and structural analyses are reported for the first time for Ge(100).
    Type of Medium: Electronic Resource
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