ISSN:
1662-0356
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Natural Sciences in General
,
Technology
Notes:
In-situ and ex-situ spectroscopic ellipsometry (SE), atomic force microscopy (AFM),transmission electron microscopy (TEM), and time of flight medium energy backscattering (ToFMEBS), are used to investigate the properties of 30 and 60 Å ZrO2 films deposited at differenttemperatures on hydrogen terminated silicon (H-Si) and native silicon oxide surfaces. Resultsshow that the initial-stage deposition of ZrO2 on H-Si and native silicon oxide surfaces aredifferent. A 3-dimesional (3D) type nucleation process of ZrO2 on H-Si leads to high surfaceroughness films, while layer-by-layer deposition on native silicon oxide surfaces leads tosmooth, uniform ZrO2 films. An interfacial layer, between the substrate and the metal oxide, isformed through two independent mechanisms: reaction between the starting surfaces and ZTB orits decomposition intermediates, and diffusion of reactive oxidants through the forming ZrO2interfacial stack layer to react with the substrate
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/42/transtech_doi~10.4028%252Fwww.scientific.net%252FAST.45.1351.pdf
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