GLORIA

GEOMAR Library Ocean Research Information Access

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
Document type
Keywords
Publisher
Language
Years
  • 1
    Electronic Resource
    Electronic Resource
    An ionic mechanism for benzene ring saturation by tritium (1985)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 89 (1985), S. 4159-4160 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100265a047
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Transient species in the radiolysis of solutions of stilbene (1968)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 72 (1968), S. 3801-3807 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100857a018
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Evolution of mosaic structure in Si0.7Ge0.3 epilayers grown on Si(001) substrates (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1292-1297 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, we report a study of mosaic structures in partially relaxed Si0.7Ge0.3 epilayers grown on Si(001) substrates by x-ray double- and triple-axis diffractometry. The samples have different layer thicknesses and hence different degrees of strain relaxation. Our results show that, at early stages of strain relaxation, the films contain mosaic regions laterally separated by perfect regions. This is because the mosaic structure caused by a misfit dislocation is effectively localized in a lateral range of the layer thickness. Therefore, far from the dislocations, the film is virtually a perfect crystal. With the increase in the degree of strain relaxation, and consequently in the dislocation density, the mosaic regions of the layer expand while the perfect regions shrink and finally vanish completely. Moreover, our results indicate that the conventional method of estimating dislocation density from the x-ray rocking curve width fails in our case. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370884
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Quantification of scaling exponents and crossover phenomena in nonstationary heartbeat time series (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Chaos 5 (1995), S. 82-87 
    Details
    ISSN: 1089-7682
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The healthy heartbeat is traditionally thought to be regulated according to the classical principle of homeostasis whereby physiologic systems operate to reduce variability and achieve an equilibrium-like state [Physiol. Rev. 9, 399–431 (1929)]. However, recent studies [Phys. Rev. Lett. 70, 1343–1346 (1993); Fractals in Biology and Medicine (Birkhauser-Verlag, Basel, 1994), pp. 55–65] reveal that under normal conditions, beat-to-beat fluctuations in heart rate display the kind of long-range correlations typically exhibited by dynamical systems far from equilibrium [Phys. Rev. Lett. 59, 381–384 (1987)]. In contrast, heart rate time series from patients with severe congestive heart failure show a breakdown of this long-range correlation behavior. We describe a new method—detrended fluctuation analysis (DFA)—for quantifying this correlation property in non-stationary physiological time series. Application of this technique shows evidence for a crossover phenomenon associated with a change in short and long-range scaling exponents. This method may be of use in distinguishing healthy from pathologic data sets based on differences in these scaling properties. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.166141
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Carrier transport in porous silicon light-emitting devices (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 295-300 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work presents a comprehensive investigation of carrier transport properties in light-emitting porous silicon (LEPSi) devices. Models that explain the electrical characteristics and the electroluminescence properties of the LEPSi devices are developed. In metal/LEPSi devices, the forward current density–voltage (J–V) behavior follows a power law relationship (J∼Vm), which indicates a space charge current attributed to the carriers drifting through the high resistivity LEPSi layer. In LEPSi pn junction devices, the forward J–V behavior follows an exponential relationship (J∼eeV/nkT), which indicates that the diffusion of carriers makes a major contribution to the total current. The temperature dependence of the J–V characteristics, the frequency dependence of the capacitance–voltage characteristics, and the frequency dependence of the electroluminescence intensity support the models. Analysis of devices fabricated with a LEPSi layer of 80% porosity results in a relative permittivity of ∼3.3, a carrier mobility of ∼10−4 cm2/V s, and a free carrier concentration of ∼1013 cm−3. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362783
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Magnetic properties of Fe/Pd multilayers grown by electron-beam evaporation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3965-3970 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic properties of [Fe(20 A(ring))/Pd(x A(ring))]25 multilayers prepared by ultrahigh vacuum electron-beam evaporation are presented. It is found that the crystal structure of Fe layers change from bcc to fcc when the thickness of Pd layers dPd≥36 A(ring). The saturation magnetization per unit Fe volume at 5 K is enhanced and oscillates with the increment of the thickness of Pd layers, due to the polarization of Pd atoms. The magnetic hysteresis loops of samples indicate low coercive forces, and ferromagnetic coupling between the Fe layers for all Pd thicknesses (6–60 A(ring)). The conversion electron Mössbauer spectra measurements proved that the magnetic moment of fcc Fe is the same as that of the bcc Fe. It is also found that the magnetic anisotropy dependence on dPd is similar to that of the saturation magnetization, and relates to the Fe layer structure transition. The Curie temperature of Fe/Pd multilayers decreases monotonously with the increasing of dPd. The low temperature magnetization measurement of Fe/Pd multilayers suggests that the interlayer coupling between Fe layers and polarization of Pd layers influences the temperature dependence of saturation magnetization. No evidence of antiferromagnetic coupling between Fe layers and giant magnetoresistance effect is found. The relationship among structure, polarization of Pd layers, and magnetic coupling is discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358579
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Improvement of Ge self-organized quantum dots by use of Sb surfactant (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2541-2543 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Sb-mediated growth technique is developed to deposit Ge quantum dots (QDs) of small size, high density, and free of dislocations. These QDs were grown at low growth temperature by molecular beam epitaxy. The photoluminescence and absorption properties of these Ge QDs suggest an indirect-to-direct conversion, which is in good agreement with a theoretical calculation. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121412
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    GaAs metal-semiconductor field-effect transistor with extremely low resistance nonalloyed ohmic contacts using an InAs/GaAs superlattice (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 775-776 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs metal-semiconductor field-effect transistors (MESFETs) with extremely low resistance nonalloyed ohmic contacts have been demonstrated. The contact structure consists of an n+-InAs/GaAs strained-layer superlattice and an InAs cap layer. Contact resistances as low as 0.036 Ω mm have been measured. These results represent the smallest figures reported to date for GaAs field-effect transistors. Nonalloyed MESFETs with 1 μm gate lengths had transconductances of about 210 mS/mm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101803
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Photoluminescence from carriers confined at a GaxIn1−xAs-InP single heterojunction interface (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1546-1548 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The low-temperature properties of the interface photoluminescence emission in GaxIn1−xAs-InP single heterojunctions grown by molecular beam epitaxy are investigated with changes of temperature and excitation intensity at different depths across the interface. The emission energy shifts to higher energy with increasing excitation intensity and lies between the three-dimensional GaxIn1−xAs-InP near-band-edge exciton and the quasi-donor–acceptor pair transition. The new emission is attributed to the interface exciton which is indirect in real space.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101325
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Enhanced ballistic transport in InGaAs/InAlAs hot-electron transistors (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1254-1255 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hot-electron transistors fabricated using a 600-A(ring) InGaAs base and a 500-A(ring) InAlAs barrier have shown a peak ballistic common base current gain of 0.82 at 77 K despite the large injection energies. Reduction of injection energies by lowering the emitter and collector barriers should lead to an even higher ballistic transport ratio due to the reduced Γ-L scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98696
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...