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  • 1
    Publikationsdatum: 2014-09-18
    Beschreibung: Objective— Angiogenesis is an important biological process during development, reproduction, and in immune responses. Placental growth factor (PlGF) is a member of vascular endothelial growth factor that is critical for angiogenesis and vasculogenesis. We generated transgenic mice overexpressing PlGF in specifically T cells using the human CD2-promoter to investigate the effects of PlGF overexpression. Approach and Results— Transgenic mice were difficult to obtain owing to high lethality; for this reason, we investigated why gestational loss occurred in these transgenic mice. Here, we report that placenta detachment and inhibition of angiogenesis occurred in PlGF transgenic mice during the gestational period. Moreover, even when transgenic mice were born, their growth was restricted. Conclusions— Conclusively, PlGF overexpression prevents angiogenesis by inhibiting Braf, extracellular signal–regulated kinase activation, and downregulation of HIF-1α in the mouse placenta. Furthermore, it affected regulatory T cells, which are important for maintenance of pregnancy.
    Schlagwort(e): Angiogenesis, Animal models of human disease
    Print ISSN: 1079-5642
    Digitale ISSN: 1524-4636
    Thema: Medizin
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5879-5879 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Magnetization-vector measurements were made at various temperatures on polycrystalline disks of YBa2Cu3O7 and (Ba,K)BiO3 as each was rotated about its axis in a fixed field H along the disk plane. For hysteretic starting states, the vortex flux density vector B is found to bifurcate into a BR component that rotates rigidly with the sample and a BF component that stays at a fixed angle (θF) relative to H, thus turning frictionally relative to the sample, as seen earlier. With increasing H, BR decreases and BF increases in size, indicating a distribution in the strength of the vortex pinning torques. After BR has vanished, the frictional angle θF decreases rapidly. Thus, the quantity Hμ sin θF (μ being the quantized vortex moment), which equals the average pinning torque (τp) on each vortex, does not remain constant but diminishes with increasing H. This decrease of τp is consistent with the collective pinning phenomenon known as vortex bundling. At fixed H, τp diminishes rapidly with increasing temperature, reaching very low values well below Tc. These results are compared with those derived from critical-state model interpretations of conventional hysteresis loop data. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6965-6965 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In the simple model proposed, repulsive intervortex forces are balanced by containing forces produced by the external field (H) and by frictional forces representing the effects of pinning on displaced vortices. For the field-cooled (FC) state, whose vortex density is presumably uniform, the empirical fact that the average flux density (B¯) in nearly equal to H yields an operational inverse-square dependence of the intervortex force on the intervortex spacing. For both the FC and zero-field-cooled (ZFC) states, expressions are derived for B¯ vs H (including the remanences at H=0) and for the profiles of B across the sample thickness. Calculations of these properties are compared with experiment and with the macroscopically related critical-state model, revealing again that the pinning forces are strongly dependent on H. The frictional interacting-vortex model is also used in deriving the critical current as a transport property of the FC and ZFC states.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6343-6343 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Upon reversal of the external magnetic field H during any hysteretic cycling of a type-II superconductor in its vortex state, the rate at which the magnetic flux density B varies with H is typically seen to start from zero and then change gradually. Measurements have now been made of the time dependence of B (the vortex flux creep) at many fixed-H points on several hysteresis loops of a grain-oriented YBa2Cu3O7 sample at 4.2 K (with H and B along the c axis), and it is observed that the size of the logarithmic dB/dt drops abruptly to zero, before proceeding to change in sign, whenever H is reversed. This curious similarity between the hysteretic behavior of dB/dt at fixed H and that of the nearly instantaneously measured dB/dH can be understood qualitatively in terms of the vortex pinning. As rotational magnetization measurements have recently shown,1 the unpinning and repinning of moving vortices is manifested macroscopically as a frictional process. Thus, the reversal of vortex motion involves the reversal of frictional forces, during which the vortex population in the superconducting sample (which is proportional to B) does not change with time or field.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2187-2189 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effects of growth temperature on the microscopic structure of GaN nucleation layers were studied in a synchrotron x-ray scattering experiment. As the growth temperature increases from 467 to 655 °C, the stacking of GaN changes from random stacking to a mixture of cubic and hexagonal stacking. With increasing the growth temperature, the order in the atomic layer positions in the out-of-plane direction increases and the mosaic distribution becomes narrow. The optimal photoluminescence spectrum was obtained on the GaN epilayer deposited on the nucleation layer grown at 505 °C. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 6
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4304-4306 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: An array of cylindrical microdischarges has been demonstrated to significantly improve the ignition characteristics of a high-pressure arc discharge by preionizing the anode–cathode gap. Situated behind the cathode, the microdischarge array serves to reduce both the statistical and formative time delays by providing seed electrons in the critical early phases of the startup of a cold lamp. Experiments conducted in Ar and Ne/2% Xe mixtures at pressures ranging from 35 to 600 Torr with spacings between the tungsten electrodes of 1–3.5 cm show that a three element array of 400-μm-diam cylindrical microdischarges lowers the dc ignition voltage for the lamp by at least a factor of 2 when the Ar pressure is between 50 and 75 Torr. The required voltage is constant over a broad range in Ar pressure (35 to ∼90 Torr) and similar results are observed with 200-μm-diam microdischarges and for lamp ignition in Ne/2% Xe gas mixtures. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 7
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 709-711 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Excitation of cylindrical microdischarges, 300–360 μm in diameter, by a reverse-biased, Si pn junction has been demonstrated. Devices fabricated from commercial diodes have been operated with Ne gas pressures in the 200–700 Torr range and dc voltages as low as 120 V. For a Ne gas pressure of 700 Torr, the wavelength-integrated (300–800 nm) output power—emitted into a solid angle of ∼6×10−2 sr—of a 360-μm-diam device is 48±1 μW for an operating current and voltage of 5.7±0.1 mA and 134 V, respectively. This hybrid solid state/gas device represents the demonstration of the generation of a gas discharge by a pn junction and lends itself to the fabrication of large arrays. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 8
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 419-421 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Microdischarge devices having inverted, square pyramidal cathodes as small as 50 μm×50 μm at the base and 35 μm in depth, have been fabricated in silicon and operated at gas pressures up to 1200 Torr. For the polyimide dielectric incorporated into these devices (cursive-epsilonr=2.9), the discharges produced exhibit high differential resistance (∼2×108 Ω in Ne), ignition voltages for a single device of ∼260–290 V, and currents typically in the μA range. Arrays as large as 10×10 have been fabricated. For an 8 μm thick polyimide dielectric layer, operating voltages as low as 200 V for a 5×5 array have been measured for 700 Torr of Ne. Array lifetimes are presently limited to several hours by the thin (1200–2000 Å) Ni anode. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 9
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 199-201 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Flexible microdischarge arrays have been fabricated in metal–polymer–metal structures having a total thickness of ∼30 μm (∼1.2 mils). Composed of individual cylindrical devices having a diameter of 150 μm, positive differential resistance (30–120 kΩ), and operating voltages as low as 114 V for a 5 μm thick dielectric layer, the arrays operate at pressures beyond 700 Torr of Ne and in 1 atm of air. For Ne pressures ≤ 200 Torr, emission is produced from Ne ion excited states lying more than 55 eV above the neutral ground state (2p6). The structures reported here are inexpensive to fabricate and have lifetimes beyond 50 h. Arrays that have been sealed by conventional lamination have also been operated successfully. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 10
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2100-2102 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Large arrays (up to 30×30) of microdischarge devices having separately addressable subarrays have been fabricated in Si and operated continuously in Ne, Ne/Ar, and Ne/Xe gas mixtures at pressures up to 800 Torr. Eight 3×3 arrays fabricated on the same substrate operate simultaneously at voltages as low as 210 V in 400 Torr of Ne and exhibit lifetimes beyond 19 h, or approximately 1 order of magnitude larger than those for earlier arrays in which all devices have a common anode. Four 15×15 arrays have also been tested and, when operated in Ne/Ar or Ne/10% Xe gas mixtures, generate intense fluorescence in the green from a phosphor over an area of 16 mm2. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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