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  • 1
    ISSN: 1520-5835
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie , Physik
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2406-2418 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Organic-on-inorganic (OI) contact barrier devices have been applied to the study of InP and In0.53Ga0.47As surfaces. The characteristics of these devices differ from OI diodes fabricated using Si or Ge substrates in that the contact barriers for InP-based devices are relatively small (≤0.55 eV), and the diode characteristics are governed by a high density of states at the organic/inorganic interface. We present current-voltage and frequency-dependent admittance-voltage characteristics for OI diodes employing 3,4,9,10 perylenetetracarboxylic dianhydride (PTCDA) and related compounds as the organic thin-film material. Analysis of characteristics using a theory presented previously [S. R. Forrest and P. H. Schmidt, J. Appl. Phys. 59, 513 (1986)] indicates that the surface state density is (i) independent of the organic material employed, and (ii) sensitive to the exposure of the surface to chemical treatment prior to the organic thin-film deposition. Using techniques derived previously, we determine the magnitude and energy distribution of the density of states at InP and In0.53Ga0.47As surfaces. It is found that the densities of states can vary between mid-1011 and 1015 cm−2 eV−1, depending on the surface treatment employed. Furthermore, some surface treatments result in an organic/In0.53Ga0.47As barrier height that is strongly dependent on applied voltage due to the presence of a high density of interface states.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 867-870 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Thin films of the organic compound 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) were deposited on n- and p-type GaAs substrates, and were found to form high contact barriers. Barrier energies of 0.64 eV on n-type substrates and 0.75 eV on p-type material yielded organic-on-inorganic (OI) contact barrier diodes characterized by exponentially increasing forward current with voltage, and a reverse dark current leakage limited by generation and recombination of carriers in the GaAs bulk. The Fermi level does not appear to be pinned at the OI interface, contrary to what is commonly observed in metal/GaAs Schottky barrier diodes. In addition, we have made OI contact barriers using N,N'-dimethyl 3,4,9,10-perylenetetracarboxylic diimide (DIME-PTCDI) deposited on n- and p-type GaAs. These devices have contact barriers of 0.85 eV for substrates of either majority-carrier-type. The n values obtained from the forward biased characteristics of the GaAs/DIME-PTCDI structures are n=1.19, and are the lowest obtained to date for OI devices.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 83 (1985), S. 480-485 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: The crystalline 1:1 complex naphthalene:octafluoronaphthalene has been investigated at high pressure under ambient temperature, and down to 10 K at ambient pressure, by Raman spectroscopy. The complex is stable in the pressure range studied, 1 to 80 kbar. The lattice mode frequencies show a strong positive pressure dependence, while the internal modes are only weakly affected. The temperature and pressure dependencies of the phonon frequencies suggest that the bonding interaction between the molecular partners is of the usual van der Waals type, and the results are in agreement with the "sublattice'' model proposed by Chen and Prasad. The mode Grüneisen γi's have been obtained from the pressure data. From the measured (∂ν/∂T)p and (∂ν/∂P)T, the "explicit,'' "implicit'' contributions have been extracted.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 82 (1985), S. 1682-1687 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: The effect of pressure on the optical absorption and Raman spectra of 1,4,5,8-naphthalenetetracarboxylic dianhydride (NTCDA) and on the optical absorption edge in 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) was investigated, using a diamond anvil cell. In NTCDA the absorption edge shifts red by about 8000 cm−1 in the range 0–180 kbar and in PTCDA by about 3000 cm−1 in the range 0–60 kbar pressure. At the upper limit of pressure the materials turn black, but on release of pressure the shifts were perfectly reversible. In the case of NTCDA, where both absorption and Raman data (up to 70 kbar) were obtained, the shift in the electronic absorption has been related to a parameter proportional to the intermolecular force constant. The latter was obtained from the pressure shift of an external mode Raman frequency, which showed the largest pressure dependence. The shift, which is nonlinear with pressure, becomes linear when plotted against the square of this frequency, normalized to its ambient pressure value [ν(p)/ν(0)]2. To our knowledge, this is the first time a combined absorption and Raman study has been performed on an organic system to establish such a direct relationship between electronic absorption and intermolecular interaction. No pressure-induced phase transition was encountered in NTCDA up to 180 kbar and in PTCDA up to 60 kbar, the limits of pressure in the present study. Earlier explanations for the pressure-induced red shifts in aromatic systems are briefly discussed.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2892-2895 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We discuss a new technique for measuring the net carrier concentrations, layer thicknesses, and deep level spectra of epitaxial InP and related compounds used in photonic device applications. The technique involves the formation of an organic-on-inorganic (OI) semiconductor contact barrier by vacuum sublimation of the compound: 3, 4, 9, 10-perylenetetracarboxylic dianhydride onto an inorganic semiconductor wafer. The OI barriers are reproducible from wafer to wafer, and can be as high as φBn ≈0.55 V over the entire range of InGaAs (P) compounds lattice matched to InP. High voltages ((approximately-greater-than)100 V in some cases) can be applied to the small area OI devices (as defined by an ohmic contact pad deposited on the organic film), allowing for deep depletion. Thus, high resolution carrier concentration measurements over extensive distances in all three wafer dimensions are obtained. These data are used to derive both the doping levels and layer thickness contours over the crystal surface. Finally, the OI devices can be removed after wafer evaluation, and the wafer can then undergo processing into conventional devices with no apparent degradation of performance when compared with control wafers that have not undergone OI diode evaluation.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 7
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    The @journal of organic chemistry 31 (1966), S. 962-962 
    ISSN: 1520-6904
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 8
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    Analytical chemistry 47 (1975), S. 1703-1705 
    ISSN: 1520-6882
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 9
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    Journal of the American Chemical Society 88 (1966), S. 526-529 
    ISSN: 1520-5126
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 10
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    Journal of the American Chemical Society 88 (1966), S. 3527-3533 
    ISSN: 1520-5126
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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