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Digitale Medien

Thickness dependence of structural and electrical properties in epitaxial lead zirconate titanate films (1999)

Nagarajan, V. ; Jenkins, I. G. ; Alpay, S. P. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 86 (1999), S. 595-602

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We have studied the effect of misfit strain on the microstructure and properties of ferroelectric lead zirconate titanate thin films. We have changed the misfit strain by varying the film thickness and studied the thickness effect on the domain formation of epitaxial PbZr0.2Ti0.8O3 (PZT) films grown by pulsed laser deposition on (001) LaAlO3 substrates with La0.5Sr0.5CoO3 (LSCO) electrodes. The nominal thickness of the PZT films was varied from 60 to 400 nm with the LSCO electrode thickness kept constant at 50 nm. X-ray diffraction experiments show that the films relax via the formation of a domains, the fraction of which increase with the ferroelectric film thickness. The c-axis lattice constant of PZT films calculated from the 002 reflection decreases with increasing film thickness and approaches the bulk value of ∼0.413 nm in the films thicker than 300 nm. Cross-sectional transmission electron microscopy images reveal that the a-domain fraction and period increase with increasing film thickness. The relaxation of misfit strain in the film is accompanied by systematic changes in the polarization properties, as well as the switching fields, quantified by the coercive field and the activation field. © 1999 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.370772

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2

Digitale Medien

Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers (1991)

Powell, J. A. ; Petit, J. B. ; Edgar, J. H. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 59 (1991), S. 333-335

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We have found that, with proper pregrowth surface treatment, 6H-SiC single-crystal films can be grown by chemical vapor deposition (CVD) at 1450 °C on vicinal (0001) 6H-SiC with tilt angles as small as 0.1°. Previously, tilt angles of greater than 1.5° were required to achieve 6H on 6H at this growth temperature. In addition, 3C-SiC could be induced to grow within selected regions on the 6H substrate. The 3C regions contained few (or zero) double-positioning boundaries and a low density of stacking faults. A new growth model is proposed to explain the control of SiC polytype in this epitaxial film growth process.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.105587

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3

Digitale Medien

Application of oxidation to the structural characterization of SiC epitaxial films (1991)

Powell, J. A. ; Petit, J. B. ; Edgar, J. H. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 59 (1991), S. 183-185

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Both 3C-SiC and 6H-SiC single-crystal films can be grown on vicinal (0001) 6H-SiC wafers. We have found that oxidation can be a powerful diagnostic process for (1) "color mapping'' the 3C and 6H regions of these films, (2) decorating stacking faults in the films, (3) enhancing the decoration of double positioning boundaries, and (4) decorating polishing damage. Contrary to previously published oxidation results, proper oxidation conditions can yield interference colors that provide a definitive map of the polytype distribution for both the Si face and C face of SiC films. Defects were more effectively decorated by oxidation on the Si face than on the C face.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.105960

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4

Digitale Medien

Dynamics of polarization loss in (Pb, La)(Zr, Ti)O3 thin film capacitors (1998)

Jenkins, I. G. ; Song, T. K. ; Madhukar, S. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 72 (1998), S. 3300-3302

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We report results of high-speed polarization relaxation measurements in ferroelectric thin film capacitors. Polarization relaxation has been reported to occur in two distinct time regimes, one for relaxation times in the range of a few milliseconds and a second for longer relaxation times. We find that the polarization relaxation in the first regime is governed by at least two different physical processes, namely depoling fields and the activation field for switching. Using prototypical epitaxial PbZr0.2Ti0.8O3 and Pb0.9La0.1Zr0.2Ti0.8O3 test capacitors, we demonstrate the effect of film microstructure and switching speed on the relaxation dynamics in the first regime. © 1998 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.121630

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5

Digitale Medien

Switching properties of Pb(Nb, Zr, Ti)O3 capacitors using SrRuO3 electrodes (1999)

Aggarwal, S. ; Jenkins, I. G. ; Nagaraj, B. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 75 (1999), S. 1787-1789

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We report on ferroelectric properties of polycrystalline sol-gel derived Pb(Nb, Zr, Ti)O3 (PNZT) thin films with SrRuO3 (SRO) electrodes. The processing temperature of the bottom electrode was varied between 550 and 850 °C. The polarization of the ferroelectric capacitors was dependent on the processing temperature of the bottom electrode. The capacitors exhibit low switching fields (40 kV/cm), high resistivity (1011 Ω cm at 3 V) and high remanent polarization values (19 μC/cm2 at 3 V), desirable properties for high-density ferroelectric memories. The activation field for these capacitors was measured to be ∼350 kV/cm and the polarization values exhibited a shallow dependence on the pulse width from 1 s to 1 μs. Fatigue, logic state retention, and dynamic imprint tests indicate robust capacitors from a memory viewpoint. © 1999 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.124820

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6

Digitale Medien

Can lead nonstoichiometry influence ferroelectric properties of Pb(Zr,Ti)O3 thin films? (1999)

Aggarwal, S. ; Madhukar, S. ; Nagaraj, B. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 75 (1999), S. 716-718

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: In this letter, we report on the influence of lead content on thin-film ferroelectric properties of lead niobium zirconate titanate. These films were prepared by the sol-gel technique and deposited on (La,Sr)CoO3 electrodes. It was determined that 7% excess lead in the sol was required to obtain nominally stoichiometric films. Lead deficiency in the film results in lead vacancies and excess lead is accommodated by forming octahedral site vacancies. Further amounts of lead in the sol leads to second phase PbO, which then coexists with the perovskite phase. The charged vacancies are compensated by mobile holes, which can interact with domains during switching. Under applied field and short pulse widths, the films with larger number of holes exhibited poor switching. Significant polarization relaxation was measured for films with excess lead, which is attributed to interaction of ionic defects with domains. Our results indicate that lead excess leads to poor reliability properties,whereas lead deficiency suppresses the polarization of the capacitors. © 1999 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.124492

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