Schlagwort(e):
Electronic books.
Materialart:
Online-Ressource
Seiten:
1 online resource (562 pages)
Ausgabe:
1st ed.
ISBN:
9780081017524
Serie:
Metal Oxides Series
URL:
https://ebookcentral.proquest.com/lib/geomar/detail.action?docID=5042251
DDC:
530.4275
Sprache:
Englisch
Anmerkung:
Front Cover -- Metal Oxide-Based Thin Film Structures: Formation, Characterization, and Application of Interface-Based Phenomena -- Copyright -- Contents -- Contributors -- Editors' biographies -- Series editor's biography -- Preface to the series -- Introduction -- Section A: Interface formation: Theoretical aspect in epitaxial growth mechanisms, structural features and defects formation -- Chapter 1: Epitaxy of 5d transition metal oxide thin films and heterostructures -- 1.1. Introduction -- 1.2. Challenges and opportunities in thin film synthesis -- 1.3. Single-phase films -- 1.3.1. Perovskite -- 1.3.2. Ruddlesden-popper -- 1.3.3. Honeycomb -- 1.3.4. Pyrochlore -- 1.4. 5d heterostructures and superlattices -- 1.4.1. Iridate-titanate -- 1.4.2. Iridate-manganite -- 1.4.3. Iridate-ruthenate -- 1.5. Conclusions and future direction -- References -- Chapter 2: Oxide superlattices by PLD: A practical guide -- 2.1. Introduction -- 2.2. Growth templates -- 2.3. Growth of superlattices (diagnostics) -- examples -- 2.3.1. Example: Fabrication of PbTiO3-SrTiO3 superlattices grown by PLD -- 2.3.2. Example: Fabrication of (La,Sr)MnO3-(Ba, Sr)TiO3 superlattices grown by PLD -- 2.3.3. Example: Fabrication of (Sr,Ca)CuO2-BaCuO2 superlattices grown by PLD [19] -- 2.3.3.1. Estimation deposition rate of constituents -- 2.3.3.2. ABO2 superlattices -- 2.4. Conclusions -- References -- Chapter 3: Oxide molecular beam epitaxy of complex oxide heterointerfaces -- 3.1. Introduction -- 3.2. Oxide MBE system -- 3.3. MBE synthesis schemes -- 3.3.1. Co-deposition method -- 3.3.2. Atomic layer-by-layer synthesis -- 3.3.3. Combinatorial synthesis -- 3.4. MBE growth control of oxide heterostructures -- 3.5. Cases of heterointerface study -- 3.5.1. Delta-doping heterostructures [37-39] -- 3.5.2. Overdoped-underdoped bilayers [64-66].
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3.5.3. LSAO-LCO bilayers and superlattices -- 3.5.4. Comparative study of LNO-LAO heterostuctures grown by PLD and MBE [48,74] -- 3.6. Conclusions -- 3.7. Final remarks -- References -- Further reading -- Chapter 4: Electrochemical ionic interfaces -- 4.1. Introduction -- 4.2. Defects and transport in ionic conductors -- 4.3. Interfacial transport -- 4.3.1. Space charge -- 4.3.2. Strain -- 4.3.2.1. Theoretical considerations -- 4.3.2.2. Lattice strain -- 4.3.2.3. Interfacial strain -- 4.3.3. Dislocations -- 4.3.4. Segregation -- 4.3.5. Chemical expansion -- 4.3.6. Electronic transfer -- 4.4. Outlook -- References -- Section B: Experimental: Structural and compositional characterization techniques of metal oxides interfaces -- Chapter 5: In situ stress measurements of metal oxide thin films -- 5.1. Materials engineering in heteroepitaxial thin films -- 5.2. Strain relaxation in epitaxial films: An overview of established principles and models -- 5.3. In situ strain or stress observation techniques -- 5.3.1. Diffraction-based techniques -- 5.3.1.1. X-ray diffraction -- 5.3.1.2. Reflection high-energy electron diffraction -- 5.3.2. Curvature-based techniques -- 5.3.2.1. Cantilever technique -- 5.3.2.2. Multi-beam optical stress sensor -- 5.4. Application of in situ strain/stress monitoring techniques -- 5.4.1. X-ray diffraction -- 5.4.2. Reflection-high energy electron diffraction -- 5.4.3. Cantilever technique -- 5.4.4. Multi-beam optical stress sensor -- 5.5. Summary and outlook -- References -- Chapter 6: Plume characterization in pulsed laser deposition of metal oxide thin films -- 6.1. Introduction -- 6.2. Experimental diagnostic techniques of the laser ablation plume -- 6.3. Plume dynamics of metal oxides in a background gas -- 6.4. Deposition rate of metal oxides in a background gas.
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6.5. Ion probe investigations of metal oxides in a background gas -- 6.6. Influence of the background gas on metal oxide thin films stoichiometry -- 6.7. Summary -- References -- Further reading -- Chapter 7: Photoemission of buried metal oxide interfaces -- 7.1. Introduction -- 7.2. Basics of photoemission spectroscopy -- 7.3. Photoemission of core levels -- 7.3.1. Depth profiling -- 7.3.2. Band bending and offset -- 7.4. Photoemission of valence band -- 7.4.1. Momentum-resolved mapping of valence states -- 7.4.2. Tracing oxygen vacancies -- 7.5. Conclusions and outlook -- References -- Further reading -- Chapter 8: Functional material properties of oxide thin films probed by atomic force microscopy on the nanoscale -- 8.1. Introduction to dynamic contact mode atomic force microscopy -- 8.2. Electrostatic forces in contact mode -- 8.3. Piezoelectric coefficients of ferroelectric materials -- 8.4. Dielectric tunability -- 8.5. Ionic motion in Li-ion conducting materials -- 8.6. Outlook -- References -- Further reading -- Chapter 9: Controlled atmosphere high-temperature scanning probe microscopy (CAHT-SPM) -- 9.1. Introduction to high-temperature SPM -- 9.1.1. Challenges -- 9.2. Importance of in situ and in operando local probing measurements -- 9.3. The CAHT-SPMs -- 9.3.1. CAHT-I -- 9.3.2. CAHT-II -- 9.4. In situ surface reduction of NiO by hydrogen between 312C and 523C -- 9.5. Local electrochemical measurements at 650C to 850°C -- 9.6. Conductance mapping of LSM microelectrodes and correlation with complementary techniques -- 9.7. Strong cathodic polarization of PtIr-YSZ microcontacts at 650°C -- 9.8. High-temperature Kelvin probe force microscopy at 300-600°C -- 9.9. Outlook -- References -- Chapter 10: Scanning SQUID measurements of oxide interfaces -- 10.1. Introduction to scanning superconducting quantum interference device (SQUID).
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10.2. Introduction to scanning SQUID measurements of oxides -- 10.2.1. Coexistence of ferromagnetism and superconductivity at the LAO/STO interface -- 10.3. Superconductivity -- 10.3.1. Gate-tuned superfluid density at the superconducting LAO/STO interface -- 10.4. Magnetism -- 10.4.1. Critical thickness for ferromagnetism in LAO/STO interface -- 10.4.2. Manipulation by stress -- 10.5. LaMnO3/SrTiO3 -- 10.5.1. Ferromagnetism and superparamagnetism in LMO/STO heterostructures -- 10.6. Current flow -- 10.6.1. Comparing global measurements with SQUID imaging -- 10.6.2. Modulations of the superconducting critical temperature -- References -- Further reading -- Section C: Modeling and properties at the metal oxide interfaces -- Chapter 11: First-principle study of metal oxide thin films: Electronic and magnetic properties of confined d electrons -- 11.1. Transition metal oxides: d electron -- 11.2. Perovskite TM oxides: Symmetry and correlation -- 11.3. DFT and simplified TB model for bulk SrVO3 -- 11.4. DFT results of thin films -- 11.5. Difference between bulk and thin films -- 11.6. The first change: Cutting the hopping term and intrinsic confinement effect -- 11.7. Additional effects from the surface/interface and spin-orbit coupling -- 11.8. Correlation effects on confined d electrons -- 11.9. Discussion of SrRuO3 (001) and (111) thin films -- 11.10. Summary -- References -- Chapter 12: Computational study of energy materials -- 12.1. Introduction -- 12.2. Atomic simulation methodology -- 12.2.1. Background -- 12.2.2. Density functional theory -- 12.2.3. Molecular dynamics -- 12.3. The role of point defects in MO -- 12.3.1. Point defects -- 12.3.2. Point defects and diffusion -- 12.4. Intrinsic defects in MoO3 -- 12.4.1. Motivation -- 12.4.2. Density of states -- 12.5. Hydrogen defects in WO3 -- 12.5.1. Motivation.
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12.5.2. Structure and formation of H defects in WO3 -- 12.6. Oxygen diffusion in doped CeO2 -- 12.6.1. Motivation -- 12.6.2. Doping and codoping -- 12.6.3. Impact of strain -- 12.7. Summary and future perspectives -- References -- Chapter 13: High-mobility two-dimensional electron gases at complex oxide interfaces -- 13.1. Introduction -- 13.2. 2DEGs at SrTiO3-based oxide interfaces -- 13.2.1. 2DEGs at polar/nonpolar oxide interfaces -- 13.2.1.1. LaAlO3/SrTiO3 -- 13.2.1.2. γ-Al2O3/SrTiO3 (GAO/STO) -- 13.2.2. Delta-doped SrTiO3 -- 13.2.3. SrTiO32DEGs by strain-induced polarization -- 13.2.4. 2DEGs at amorphous oxide interfaces -- 13.3. Modulation-doping of oxide 2DEGs -- 13.4. Conclusions and remarks -- References -- Chapter 14: Strain and interfaces for metal oxide-based memristive devices -- 14.1. Introduction -- 14.2. Fabrication of strained interfaces for mixed ionic-electronic multilayer conductors -- 14.2.1. Growth of oriented thin films and description of the interfacial states -- 14.2.1.1. Disorder at interfaces -- 14.2.1.2. Misfit dislocations -- 14.2.2. Thin film deposition -- 14.3. Structural characterization of strained multilayer interfaces-A critical discussion of tools -- 14.3.1. Characterization of strain at heterolayer interfaces -- 14.3.1.1. X-ray diffraction-based techniques -- 14.3.1.2. Raman spectroscopy techniques suited for area and phase analysis -- 14.3.1.3. Transmission electron microscopy -- 14.3.1.4. Wafer curvature measurement and in situ growth analysis with multi-beam optical stress sensors -- 14.4. Integration of strained multilayer oxides to ionotronic devices: Modulation of memristance through interfacial stra ... -- 14.5. A case study on the system Gd0.1Ce0.9O2-δ/Er2O3 -- 14.5.1. Material considerations -- 14.5.1.1. Material for the conducting phase of the multilayer.
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14.5.1.2. Material for the insulating phase of a multilayer.
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