GLORIA

GEOMAR Library Ocean Research Information Access

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
Document type
Publisher
Years
  • 1
    Electronic Resource
    Electronic Resource
    An experimental design for microluminescence (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 3890-3892 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The description of a new experimental design for microluminescence is presented in this article. The design is based on the optical analysis of a magnified luminescent region and has been proven to be useful for studying the photon transport mechanism in a solid luminescent material. Lock-in detection and a liquid-nitrogen-cooled detector are used to obtain signal-to-noise ratio as good as 102. The performance of the system is discussed by using the measurements taken from a natural ruby crystal. Using transport theory to fit our data, we found the photon diffusion length in the ruby crystal to be on the order of 46 μm. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148007
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Spatial and temperature dependence of carrier recombination in an InGaAs/InP heterostructure (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 2866-2869 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microluminescence surface scan technique has been used to investigate ambipolar carrier diffusion, photon diffusion, and photocarrier recombination in a nominally undoped InGaAs bulk layer lattice matched to InP grown by vapor levitation epitaxy. Measurements taken at different temperatures between 75 and 300 K are discussed in terms of the relative contribution of the two distinct mechanisms to the spectrally integrated luminescence intensity, namely, photon diffusion and photocarrier diffusion. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369631
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...