ISSN:
1551-2916
Quelle:
Blackwell Publishing Journal Backfiles 1879-2005
Thema:
Maschinenbau
,
Physik
Notizen:
GaN buffer and main layers were grown by the conventional hydride vapor phase epitaxy technique using GaCl3 consecutively. The deposited buffer layers were investigated by atomic force microscopy and X-ray analysis. To examine the behavior of the buffer layers at main layer growth temperature, heat treatment was conducted at 900°C. Based on the results of the buffer layer study, GaN thick films were grown at 1050°C. Optimum deposition conditions of buffer layer from the buffer and main layer studies generally coincided. On the φ scanning pattern, the GaN films grown on (0001) Al2O3 were single-crystalline. Band-edge emission dominated photoluminescence was observed at room temperature.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1111/j.1151-2916.2002.tb00035.x
Permalink
