GLORIA

GEOMAR Library Ocean Research Information Access

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
Document type
Publisher
Years
  • 1
    Electronic Resource
    Electronic Resource
    Direct observation of localized high current densities in GaN films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2367-2369 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Local high current densities in areas around dislocations with a screw component might be responsible for the observed high leakage currents in GaN-based electronic devices. Using ballistic electron emission microscopy, threading dislocations with a screw component are found to be accompanied by high current densities and low effective Schottky barrier heights. The electronic states responsible for this extremely nonuniform behavior of GaN films are metastable trap states. The experimental results show that acceptor- and donor-like charge traps coexist in the vicinity of dislocations with a screw component. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123853
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Ballistic electron emission microscopy study of transport in GaN thin films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 330-332 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ballistic electron emission microscopy (BEEM) measurements on GaN grown on sapphire substrates reveal a second conduction band minimum ∼340 meV above the absolute band minimum at the zone center (Γ point). A significant lateral variation of the energy difference between the two band minima, ±50 meV, was observed which may result from nonuniform strain in the material. The existence of two conduction bands in close proximity may affect device applications, i.e., GaN based lasers and electronic devices. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118406
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...