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  • 1
    Electronic Resource
    Electronic Resource
    Cohesive energies of the alkali hydrides and deuterides (1971)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 75 (1971), S. 1251-1255 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100679a014
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  • 2
    Electronic Resource
    Electronic Resource
    X-ray diffraction and nuclear magnetic resonance studies of the relationship between electronic structure and the tetragonal distortion in zirconium hydride (ZrHx) (1984)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 88 (1984), S. 918-923 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j150649a018
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  • 3
    Electronic Resource
    Electronic Resource
    Structural characterization of SimGen strained layer superlattices (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4305-4313 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SimGen strained layer superlattice (SLS) structures were grown by molecular beam epitaxy on GexSi1−x buffer layers on 〈100〉 Si substrates to determine the effects of buffer layer composition, SLS thickness ratio, and superlattice periodicity, on the overall quality of these structures. X-ray diffraction methods were used to determine how closely actual periodicities and compositions met targeted values, and to evaluate the quality of these samples. In most instances the as-grown structures matched the targeted values to within 10%, though in some instances deviations of 20–25% in either the period or composition were observed. The quality of the SLS structures was greatly dependent on the composition of the buffer layer on which it was grown. SimGen SLS structures grown on Si- and Ge-rich buffer layers were of much higher quality than SimGem SLSs grown on Ge0.50Si0.50 layers, but the x-ray rocking curves of the SimGen samples indicated that they were far from perfect and contained moderate levels of defects. These results were confirmed by cross sectional transmission electron microscopy, which showed that the SimGem structures contained significant numbers of dislocations and that the layers were nonuniform in thickness and wavy in appearance. SimGen structures, however, displayed fewer defects but some dislocations and nonparallelism of layers were still observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350812
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  • 4
    Electronic Resource
    Electronic Resource
    Crystallization of amorphous Zr2Pd and Zr3Rh alloys (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 545-553 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal stability behavior of the metallic glasses a-Zr2Pd and a-Zr3Rh was studied by means of x-ray diffraction, differential scanning calorimetry (DSC), and isothermal annealing. While several a-Zr2Pd alloys each exhibit two exothermic peaks during the DSC heating sequence, three different types of exothermic behavior have been observed for a-Zr3Rh alloys with nominally identical stoichiometries. These variations in DSC behavior are probably related to different conditions during the rapid quenching procedures. The three types of differential scanning calorimeter behavior shown by a-Zr3Rh alloys include (1) two peaks of about 715 K and 790 K, (2) a single large peak at about 730 K, and (3) a strong peak at about 725 K with a much weaker peak at about 850 K. The a-Zr3Rh alloys of type (1) crystallize to form a tetragonal lattice that is a newly identified Zr3Rh phase of the D0e structure type. The a-Zr3Rh alloys of types (2) and (3) crystallize first to form a face-centered cubic lattice which appears to be an E93-type structure. Both the D0e and E93 phases are metastable and ultimately anneal to the Zr2Rh phase with the tetragonal C16-type structure. The formation of the Zr2Rh phases with either the C16 or E93 structure is accompanied by α-Zr. The a-Zr2Pd alloys undergo a two-step crystallization with the initial formation of a disordered body-centered-cubic phase followed by the tetragonal Zr2Pd phase with the C11b-type structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334735
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  • 5
    Electronic Resource
    Electronic Resource
    Hydrogen desorption and adsorption measurements on graphite nanofibers (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3378-3380 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Graphite nanofibers were synthesized and their hydrogen desorption and adsorption properties are reported for 77 and 300 K. Catalysts were made by several different methods including chemical routes, mechanical alloying, and gas condensation. The nanofibers were grown by passing ethylene and H2 gases over the catalysts at 600 °C. Hydrogen desorption and adsorption were measured using a volumetric analysis Sieverts' apparatus, and the graphite nanofibers were characterized by transmission electron microscopy and Brunauer–Emmett–Teller surface area analysis. The absolute level of hydrogen desorption measured from these materials was typically less than the 0.01 H/C atom, comparable to other forms of carbon. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122755
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  • 6
    Electronic Resource
    Electronic Resource
    Interdiffusion in a symmetrically strained Ge/Si superlattice (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1253-1255 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The x-ray diffraction technique is used to measure the interdiffusion coefficients of a symmetrically strained Ge/Si superlattice consisting of alternating Ge and Si layers grown on a Ge0.4Si0.6 buffer layer. The buffer layer was 200 nm thick and was grown on a Si (100) substrate in order to symmetrize the strain, and thus maintain pseudomorphic growth of the superlattice. After the sample was annealed at different temperatures with various times, the interdiffusion coefficient Dλ was determined by monitoring the intensity decay of the low-angle x-ray diffraction peak resulting from the superlattice structure. The activation energy is calculated to be 3.1±0.2 eV in the annealing temperature range of 640–780 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100731
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  • 7
    Electronic Resource
    Electronic Resource
    Resonant Raman studies of structural ordering in Hg1−xCdxTe: Dependence on growth conditions (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1055-1057 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resonant Raman scattering with photon energies between 2.35 and 2.7 eV has been used to study both the alloy composition and local structural order in Hg1−xCdxTe for x values near 0.25 and for samples prepared by bulk growth, liquid phase epitaxy, molecular beam epitaxy, and metalorganic chemical vapor deposition. The resonance behavior of the HgTe-like transverse optical and longitudinal optical (LO) modes, the CdTe-like LO mode, and that of an additional mode probably due to preferential clustering of three Hg and one Cd about the Te sites, all indicate strong enhancement at the E1 edge. However, surfaces annealed with a Nd:yttrium-aluminum-garnet-pumped dye laser show strong suppression of the cluster mode (but not the LO mode) in all samples, which suggests that extremely rapid epitaxial regrowth may inhibit the 3:1 cluster formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102613
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  • 8
    Electronic Resource
    Electronic Resource
    Detection of dilute iron impurities in CdTe (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1521-1523 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdTe single crystals from several sources have been examined to detect the presence of impurities which may be detrimental to applications in the fabrication of IR detectors. Distinctive electron paramagnetic resonance (EPR) signals from several donor impurities, including substitutional paramagnetic Fe, were found in several samples. A photoluminescence (PL) transition at 1.1 eV was also seen in these crystals and the amplitudes of the PL signals and the Fe EPR signals are strongly correlated. Elemental analysis of the samples indicates that EPR and PL are able to detect Fe concentrations of less than 0.1 ppm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99944
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  • 9
    Electronic Resource
    Electronic Resource
    Growth and characterization of Ge/Si strained-layer superlattices (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1835-1837 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin Ge/Si strained-layer superlattices (SLS's) with periodicities of a few monolayers have been successfully grown and characterized by Raman scattering spectroscopy. Structures with alternating Ge and Si layers were grown on Si substrates of different orientations. A thick 200 nm Ge0.4Si0.6 buffer layer was grown prior to the growth of the superlattice to make the strain distribution of the superlattice symmetrical and thus to maintain the pseudomorphic growth of the superlattices. Folded acoustic phonon peaks observed from these Ge/Si SLS samples can be used to determine the superlattice periodicity. The observed optical phonon frequencies were found to depend strongly on superlattice periodicity. A quantitative interpretation of this phenomenon was presented. Subsequent annealing of these samples reveals that the transition from pure Ge and/or Si layers to GexSi1−x alloy becomes more pronounced as the annealing time and temperature increase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100369
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  • 10
    Electronic Resource
    Electronic Resource
    Study of molecular-beam epitaxially grown GexSi1−x/Si layers by Raman scattering (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3634-3636 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The strain distribution of a GexSi1−x/Si strained layer superlattice (SLS) as a function of the distance from the superlattice/substrate interface has been studied by Raman spectroscopy. A small-angle bevel was made by angle lapping on a given thick GexSi1−x/Si SLS so that it is possible to probe the structure at different thicknesses. The Raman spectrum as a function of the distance from interface is then obtained. The results indicate that, as we move away from the substrate interface, the compression strain in the alloy layers decreases while the tensile strain in the Si layers increases. From linewidth measurement of the Raman peaks, it appears that there is an improved crystal quality and a lower concentration of defects going away from the substrate interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341401
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