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  • 1
    Electronic Resource
    Electronic Resource
    Interfacial interactions between (HgCd)Te and Ti, an ultrareactive metal (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5191-5193 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interfacial interactions between (HgCd)Te and Ti, an ultrareactive metal, have been examined using photoelectron spectroscopy with synchrotron radiation. Deposition of small quantities of Ti, which form tellurides that are thermodynamically more stable than HgTe or CdTe, causes a loss of both Hg and Cd from the interface. The rate of Hg depletion is greater than that of Cd and is greater than the rate of Hg depletion yet observed for any other overlayer metal. This greater Hg loss is attributed to the increased disruption of the semiconductor surface region caused by the loss of Cd. Unlike the cases of Al and In, but similar to that of Cr, no additional band bending is observing during the early stages of metal deposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338299
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  • 2
    Electronic Resource
    Electronic Resource
    Resistance and 1/f noise of Au, Al, and Ge contacts to (Hg,Cd)Te (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6340-6346 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The resistance and 1/f noise of Au and Al contacts to ion-sputtered p-type Hg0.79Cd0.21Te and of Ge contacts to Hg0.7Cd0.3Te have been measured at temperatures of 12, 40, 77, and 295 K. The Au and Al contacts were ohmic at all temperatures whereas the Ge contacts were partially rectifying. The specific contact resistance for Au and Al varied by about a factor of 10 up to 9×10−4 Ω cm2 and 3×10−3 Ω cm2, respectively, at 295 K, and there was little variation in resistance down to 12 K. The 1/f noise of the Au and Al contacts could be described as a power spectral density of resistance fluctuations SR which varied with the contact diameter d as SR∝d−m, where 5≤m≤6 for Au and 2≤m≤3 for Al. The values of m suggest that whereas the 1/f noise of the Au contacts originated at the Au/(Hg,Cd)Te interface or in the underlying (Hg,Cd)Te, the 1/f noise of the Al contacts originated in a surface conduction layer next to the contact. The magnitude of the 1/f noise was significantly larger than expected for any fundamental 1/f noise source.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345154
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  • 3
    Electronic Resource
    Electronic Resource
    Determination of electrical transport properties using a novel magnetic field-dependent Hall technique (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 541-554 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel technique is presented for interpreting magnetic field-dependent Hall data at magnetic fields below the range at which Shubnikov–de Haas oscillations occur. The technique generates a "mobility spectrum'' in which the maximum carrier density or maximum conductivity is determined as a continuous function of mobility. Examples of the use of the technique with synthetic data as well as data from HgCdTe and GaAs/AlGaAs samples are provided. Other uses of the procedure, including measurement of Fermi surface shapes and direct measurement of the distribution of relaxation times, are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339780
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  • 4
    Electronic Resource
    Electronic Resource
    Deposition of the reactive metals Al and In onto sputtered and cleaved Hg1−xCdxTe surfaces (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3150-3156 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interactions of the reactive metals Al and In with both cleaved and sputtered p-type Hg1−xCdxTe surfaces have been investigated using synchrotron radiation-induced ultraviolet photoelectron spectroscopy. The sputtered surfaces are depleted of a fraction of their Hg (∼25% and ∼40% for x=0.21 and x=0.28 material, respectively, relative to the Hg found on the corresponding cleaved surfaces) and are more inverted than the cleaved surfaces with the Fermi level higher in the conduction band. During metal deposition, the cleaved and sputtered surfaces behave similarly: in the initial stages, the metal reacts with the HgTe alloy component to form a metal telluride and Hg, which leaves the surface region. At the same time, the inverted surface becomes more degenerate. After the metal has reacted with all the available HgTe within a certain surface region, an unreacted metallic film grows on the surface. Such identical behavior of the two types of surfaces is explained by the large difference in thermodynamic stability between HgTe and the metal tellurides.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337802
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  • 5
    Electronic Resource
    Electronic Resource
    Deposition of the unreactive metal Au onto sputtered and cleaved Hg1−xCdxTe surfaces (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3157-3161 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interaction between thin layers of Au and both cleaved and sputtered p-type Hg0.72Cd0.28Te and sputtered p-type Hg0.79Cd0.21Te surfaces has been investigated with ultraviolet photoelectron spectroscopy using synchrotron radiation. Only a small loss of Hg from the interface was observed during Au deposition, in contrast to that seen during Al and In deposition reported elsewhere. The retention of Hg is explained by the lower stability of AuTe2 compared with HgTe, which makes the exchange reaction between Au and Hg unfavorable. Small differences in the Hg/Cd ratio following Au deposition with different surface preparations and material were noted. They were attributed to reduced stability of the ion-bombarded surface caused by sputter-induced defects and reduced strength of the Hg–Te bond, which resulted from the increased local CdTe concentration. Although Au diffused into the semiconductor to partially compensate for the cleavage-induced defects (which act as donors), it was not able to compensate appreciably for the larger number of sputter-induced defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337728
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  • 6
    Electronic Resource
    Electronic Resource
    Comment on "High-detectivity GaAs quantum-well infrared detectors with peak responsivity at 8.2 μm'' (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4129-4129 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent measurements of less-than-full shot noise in GaAs/AlGaAs quantum-well infrared detectors can be explained in terms of standard photoconductor generation-recombination theory. Therefore, more complex models are not yet necessary.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348426
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  • 7
    Electronic Resource
    Electronic Resource
    Evidence for electron trapping by Sm dimer and trimer centers in Sm doped CaF2 (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3197-3199 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using coherent anti-Stokes Raman and linear absorption spectroscopy we present experimental evidence for a novel electron trapping mechanism in Sm doped CaF2. The appearance of additional Raman lines after ionization of the Sm2+ ions, their dependence on the Sm3+ concentration and their behavior due to an enhancement by the lowest 4f→5d transition of Sm2+, support strongly that electrons can be trapped by dimers or trimers of Sm3+ ions in a CaF2 lattice. The resulting color change is reversible due to a possible reionization of the traps, rendering this material photochromic. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117959
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  • 8
    Electronic Resource
    Electronic Resource
    Photoconductive gain and generation-recombination noise in multiple-quantum-well infrared detectors (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3589-3591 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoconductive gain, g, and generation-recombination (GR) noise of multiple-quantum-well infrared detectors are calculated for structures in which the well capture probability, pc, and the fraction of current derived from tunneling are allowed to vary through the structure. For uniform pc and no tunneling current, g=1/(Npc), where N is the number of wells. The GR noise power under the same conditions is 4eI¯gB(1−pc/2), where e is electronic charge, I¯ is the mean current, and B is the measurement bandwidth. When pc(very-much-less-than)1, the noise contributions from carrier generation and decay (recombination) are equal as in a homogeneous photoconductor. However, when pc→1, the recombination noise decreases to zero, and the noise is equal to the shot noise of N series-connected, independent junctions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110105
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  • 9
    Electronic Resource
    Electronic Resource
    Diagnosis of Megaloblastic Anemia (1991)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Medicine 42 (1991), S. 311-322 
    Details
    ISSN: 0066-4219
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.me.42.020191.001523
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  • 10
    Electronic Resource
    Electronic Resource
    Mechanism of Photosynthetic Water Oxidation (1989)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Biophysics and Biomolecular Structure 18 (1989), S. 25-46 
    Details
    ISSN: 0084-6589
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Biology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.bb.18.060189.000325
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