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  • 1
    Electronic Resource
    Electronic Resource
    Optical spectroscopy of plasma produced by laser ablation of Ti alloy in air (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1783-1786 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved emission spectrum from the plasma produced by 1.06 μm, 10 ns pulsed-laser irradiation of titanium alloy targets in air at a flux of 9.3×109 W cm−2 was analyzed in the wavelength range of 2000–8800 A(ring). From the evolutions of the specific spectrum lines of N II, Ti I, and Fe I, the velocities of N+ ions and the excited neutral Ti and Fe atoms have been obtained using a time-of-flight diagnostic method. The electron temperatures were deduced using the relative emission intensities of N II and Fe I isolated spectrum lines, and an electron number density was determined from the Stark-broadened line of the N II line at wavelength λ=3995 A(ring). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362988
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  • 2
    Electronic Resource
    Electronic Resource
    InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4186-4188 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-assembled InAs quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on a (311)B InP substrate. Transmission electron microscopy clearly shows that a high density of smaller InAs islands can be obtained by using such a high index substrate. After introducing a lattice-matched underlying In0.52Al0.24Ga0.24As layer, the InAs QDs are much more uniform in size and form two-dimensional well ordered arrays. The photoluminescence (PL) spectra also confirm that the InAs QDs grown on underlying In0.52Al0.24Ga0.24As have a better quality than those grown in the In0.52Al0.48As matrix. A simple calculation indicates that the redshift of the PL peak energy mainly results from InAs QDs on underlying In0.52Al0.24Ga0.24As of large size. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1350616
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  • 3
    Electronic Resource
    Electronic Resource
    Electromagnetic missiles and radial dependence of pulses transmitted by transient sources (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5817-5828 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The retarded solution to the inhomogeneous wave equation in electrodynamics is studied with a purpose to understand Wu's missile and subsequently the radial dependence of energy transmitted by transient sources. The finite rate of change of the source current is shown to imply the inverse-square law at a sufficiently large distance, the region of which is determined by the minimum scale time tm of the current and may be called the (generalized) Fraunhofer region. With a uniform disk source, the electric field on the symmetry axis for a wide range is shown equal to the difference of the current at two times. Hence, examples with analytic results are given to demonstrate clearly how the pulse energy decreases with distance at a much slower rate in the (generalized) Fresnel region and how the inverse-square dependence is recovered in the farther region. Moreover, Wu's current profile, though with infinite slopes, is a Lighthill's generalized function and missiles refer to the transmitted pulses in the limit of zero tm which gives an infinite Fresnel region. A square temporal profile and other profiles with a sudden rise (or fall), including Samaddar's single-cycled cosine, which also generate missiles with an inverse-linear dependence, are studied. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371598
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  • 4
    Electronic Resource
    Electronic Resource
    In-plane optical anisotropy of symmetric and asymmetric (001) GaAs/Al(Ga)As superlattices and quantum wells (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1266-1270 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two sensitive polarized spectroscopies, reflectance difference spectroscopy and photocurrent difference spectroscopy, are used to study the characteristic of the in-plane optical anisotropy in the symmetric and the asymmetric (001) GaAs/Al(Ga)As superlattices (SLs). The anisotropy spectra of the symmetric and the asymmetric SLs show significant difference: for symmetric ones, the anisotropies of the 1HH→1E transition (1H1E) and 1L1E are dominant, and they are always approximately equal and opposite; while for asymmetric ones, the anisotropy of 1H1E is much less than that of 1L1E and 2H1E, and the anisotropy of 3H2E is very strong. The calculated anisotropy spectra within the envelope function model agree with the experimental results, and a perturbation approach is used to understand the role of the electric field and the interface potential in the anisotropy. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1383018
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dots (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2048-2050 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of growth temperature on the optical properties of self-assembled In0.65Al0.35As/Al0.35Ga0.65As quantum dots is studied using photoluminescence and electroluminescence spectra. With the growth temperature increasing from 530 to 560 °C, the improvement of optical and structural quality has been observed. Furthermore, edge-emitting laser diodes with three stacked InAlAs quantum dot layers grown at different temperature are processed, respectively. For samples with quantum dots grown at 560 °C, the continuous wave operation is obtained up to 220 K, which is much higher than that of ones with InAlAs islands grown at 530 °C and that of the short-wavelength quantum-dot laser previously reported. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1388021
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of seed layer on the realization of larger self-assembled coherent InAs/GaAs quantum dots (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5433-5436 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The size and shape evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0 ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9 ML deposition on GaAs(100) substrate. Based on comparisons with the formation of large incoherent InAs islands on single-layer samples at late growth stage, the larger coherent InAs quantum dots at 2.9 ML deposition has been observed on the second InAs layer. A simple model analysis accounting for the surface strain distribution influenced by buried islands gives a stronger increment of critical QD diameter for dislocation nucleation on the second layer in comparison with the single-layer samples. Additionally, the inhibition of dislocation nucleation in InGaAs/GaAs large islands can also be explained by our theoretical results. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1318371
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  • 7
    Electronic Resource
    Electronic Resource
    Anomalous temperature dependence of photoluminescence from InAs quantum dots (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2529-2532 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-assembled InAs quantum dots are fabricated on a GaAs substrate by molecular beam epitaxy. The dots are covered by several monolayers of In0.2Ga0.8As before a GaAs cap layer and an in situ postgrowth annealing is performed to tune the emission to higher energy. The temperature dependence of photoluminescence from this structure demonstrates a slower redshift rate of the peak position, a gradual broadening of the linewidth and an abnormal enhancement of integrated intensity as the temperature is increased from 15 to 300 K. These phenomena are closely related to the introduction of an InGaAs layer and to the intermixing of In and Ga atoms during annealing. We propose a model to explain the unusual increase in PL intensity, which fits the experimental data well. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1288231
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  • 8
    Electronic Resource
    Electronic Resource
    Aluminum doping of poly(vinylidene fluoride with trifluoroethylene) copolymer (2001)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 114 (2001), S. 1866-1869 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The interface between aluminum and crystalline copolymer thin film of vinylidene fluoride (70%) with trifluoroethylene (30%) [PVDF-TrFE] has been studied. The ratio of carbon 1s and aluminum 2p core level photoemission peak intensities changes little with increasing emission angle after deposition of 5 Å aluminum on the surface of PVDF-TrFE. This indicates that the distribution of aluminum atoms in the copolymer film is quite uniform in the near surface region and that the interface between PVDF-TrFE and aluminum is not abrupt. There is evidence for changes in photohole screening with aluminum doping within the polymer film. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1334351
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  • 9
    Electronic Resource
    Electronic Resource
    Construction and performance of a low noise inductive transducer for the Louisiana State University gravitational wave detector (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 174-181 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The design, fabrication, and performance of an inductive transducer for a two-mode resonant mass gravitational radiation detector is described. The design of the transducer is based on a detailed noise model of the detector. The transducer combines a large dynamic mass, a large loaded quality factor, and transformer impedance matching to an integrated dc superconducting quantum interference device (SQUID). The transducer has been in continuous use on the Louisiana State University detector for two years. Its performance on the antenna is reported. The Q's of the two resonant modes measure 6.7×106 and 2.3×106 at a transducer coupling coefficient of 0.74%. The electrical Q ranges from 2×105 to 9×105 and is dependent upon trapped magnetic flux in the transducer. The detector's dominant noise source is the commercial SQUID amplifier, and not losses in the transducer. The predicted sensitivity of the detector equipped with our transducer agrees well with its measured burst strain sensitivity, h≈6×10−19. The detector's gravitational burst strain sensitivity could be improved to 1.7×10−19 by coupling the transducer to a 200(h-dash-bar) SQUID, while operating at 4 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144773
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  • 10
    Electronic Resource
    Electronic Resource
    Liquid-state properties of electrorheological fluids (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 2258-2262 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We examine a simple model of the liquid state of an electrorheological fluid, with emphasis on the role of many-particle (local-field) effects. The induced dipole moments are treated as internal degrees of freedom. The distribution function for these dipole moments is calculated self-consistently within the mean-spherical approximation (MSA). The present MSA formalism is more rigorous and slightly more general than the "mean-field'' treatment by Adriani and Gast [Phys. Fluids 31, 2757 (1988)]. We also use a more accurate MSA correlation function which leads to numerical results suggestive of a phase transition out of the liquid state at a critical value of the dimensionless dipole interaction strength.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.464206
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