Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
71 (1997), S. 2190-2192
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A forward S-type bistability was observed in a Si diode with two double δ-doped Si tunnel junctions between the p and n contacts. The conductivity in the two branches of the bistable I–V curve changes by seven orders of magnitude. This, coupled with the all-silicon nature of the device, makes it a very attractive multistate device for practical applications. The bistability is explained by a mechanism, referred to as "band switching," which is supported by temperature dependence of the I–V characteristics. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.119377
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