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  • 1
    Electronic Resource
    Electronic Resource
    Grain-size distribution in ion-irradiated amorphous Si films on glass substrates (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 648-652 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous Si films containing crystal seeds can be converted to a polycrystal by an ion beam with heating at 350 °C on silica glass substrates, and the density of the crystal grain is almost the same as that of the initial seed. However, the size and density of the crystal seed decrease when the ion irradiation is performed without external heating. The average grain size in the completely crystallized film can be controlled by decreasing the crystal seed density before crystallization. The growth process of crystal grains (average grain diameter R and standard deviation σR) is reported and the gradient ΔσR/ΔR is estimated to be about 0.15. A model calculation is performed to estimate the gradient on the assumption that the growth rate is governed by the plane (111) crystallization and the calculated value is 0.05.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351349
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  • 2
    Electronic Resource
    Electronic Resource
    Epitaxial growth of ZnS grown at low temperatures by atmospheric pressure metalorganic vapor phase epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5674-5681 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystalline epitaxial layers of undoped ZnS have been grown at 250–300 °C on (100)-oriented GaAs substrates by atmospheric pressure metalorganic vapor phase epitaxy using dimethylzinc (DMZ) and hydrogen sulfide as source materials. The premature reaction typically encountered with this source combination can be eliminated completely as well as in the case of ZnSe epitaxial growth using DMZ and hydrogen selenide, even at atmospheric pressure, by controlling the source gas velocity and the mole ratio. ZnS heteroepitaxial layers (heteroepilayers) with excellent mirrorlike surface morphologies, which were grown at 250 °C for the source gas mole (VI/II) ratio below 10, were obtained. The VI/II ratio dependence of the ZnS heteroepilayers is very different from that of ZnSe heteroepilayers, whose surface morphologies are mirrorlike at a VI/II ratio above 10. Also the surface morphologies of the ZnS heteroepilayers gradually begin to degrade as the growth temperature increases above 250 °C. Moreover, below 220 °C, the crystalline quality abruptly changes to polycrystal, as with bad hazy morphology, which is similar to that seen in ZnSe heteroepilayers grown below 210 °C. It is shown that it is necessary to grow ZnS layers epitaxially at least higher than 220 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346982
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  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence study of Li- and Na-implanted ZnSe epitaxial layers grown by atmospheric pressure metalorganic vapor-phase epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3212-3220 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated p-type doping of Li and Na impurities by ion implantation into ZnSe heteroepitaxial layers grown at very low temperatures (250 °C) by atmospheric pressure metalorganic vapor-phase epitaxy. The activation rates of shallow acceptor levels, the density of self-activated centers in the implanted-ZnSe epitaxial layers (epilayers), and the degradation of crystalline quality due to radiation damage are dependent on the ion implantation and annealing conditions. As the dose density changes, so do the optimum annealing conditions for the degrees of activation and the recovery of radiation damage. Also the depth profile of the implanted ions and damage is greatly influenced by the acceleration energy. It is difficult to decide on the optimum annealing conditions at the different acceleration energies and to assess the crystalline quality of the implanted epilayers with a nonuniform depth profile of the implanted ions, because the region analyzed is restricted near to the surface and does not always coincide with the implanted region in the epilayer. We have confirmed that the high-temperature annealing does not cause the damage to propagate deeply into the implanted epilayers, although it has been a cause of much concern in II-VI compounds.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346372
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  • 4
    Electronic Resource
    Electronic Resource
    Growth of CdS by atmospheric pressure metalorganic vapor-phase epitaxy at low temperature (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2781-2790 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystalline epilayers (epitaxial layers) of undoped, phosphorus-, and iodine-doped CdS have been grown at 250–400 °C on (100)-oriented GaAs substrates by atmospheric pressure metalorganic vapor-phase epitaxy using dimethylcadmium and hydrogen sulfide as source materials. The premature reaction typically encountered with this source combination, as well as in the case of ZnSe epitaxial growth using dimethylzinc and hydrogen selenide, can be eliminated completely even at atmospheric pressure by controlling the respective flow velocities of the carrier gases, including the source gases, independently. The crystallographic structure of CdS epilayers is largely related to the VI/II source gas mole ratio, and changes from hexagonal into cubic (100) structure with decreasing VI/II ratio. From the x-ray-diffraction and photoluminescence measurements, an epilayer grown at 350 °C with a VI/II ratio of 2 has excellent crystalline quality with complete single-cubic (100)-type epitaxial structure. Also in correspondence with such changes of the crystallographic structure, it is clearly observed that the energy positions of the near-band-edge emissions shift 75, 96, and 101 meV, respectively, downwards at 300, 77, and 4.2 K. In addition, the fundamental data on cubic CdS have been obtained for the first time. It is concluded that a P impurity does not form a shallow acceptor level, but instead SA (self-activated) centers. An I impurity effectively forms a shallow donor level while preserving the high crystalline quality, and changes the crystallographic structure from cubic type into hexagonal type without generating SA centers. It is concluded that the doping alters both crystallographic structure and crystalline quality in the epitaxial growth of CdS.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351529
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  • 5
    Electronic Resource
    Electronic Resource
    Nonlinear change of refractive index of Co3O4 thin films induced by semiconductor laser (λ=405 nm) irradiation (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 999-1001 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonlinear change of the refractive index (n) and extinction coefficient (k) of Co3O4 thin films induced by a laser with λ=405 nm (hν=3.06 eV) irradiation was evaluated using equipment having an ellipsometric optical configuration. Nonlinear refractive index (n2) and extinction coefficient (k2) were +1.0×10−10 m2/W (positive) and −2.6×10−11 m2/W (negative), respectively. n2 and k2 at λ=650 nm (hν=1.91 eV) were −5.5×10−11 m2/W and −8.7×10−11 m2/W (both have negative signs). From these results and the fact that the Co3O4 thin film has the band-gap energy of 2.06 eV, the band filling effect can be seen as one of the most probable models describing the large nonlinear change of n and k of Co3O4 thin film. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1498144
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  • 6
    Electronic Resource
    Electronic Resource
    Crystallization of amorphous Si on a glass substrate through nucleation by Si+ ion implantation (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1970-1972 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Crystallization of amorphous Si films on a glass substrate by Si+ implantation (acceleration energy: 180 keV, beam current density: 10 μA/cm, ion dose: 1×1017 ions/cm2) was performed without external heating of the substrate. Transmission electron microscopy images of the crystallized specimens lead to the following conclusions: (1) crystallization was achieved through bulk nucleation by Si+ implantation, which is a low temperature and rapid process compared with the ordinary thermal process, (2) the crystallization is strongly related to the ion-solid interaction, not due to "pure'' thermal annealing by ion beam heating.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103983
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  • 7
    Electronic Resource
    Electronic Resource
    Cellular localization and metabolic function of n-butylamine-induced amine oxidases in the fungus Aspergillus niger AKU 3302 (2000)
    Springer
    Archives of microbiology 173 (2000), S. 358-365 
    Details
    ISSN: 1432-072X
    Keywords: Amine oxidase Aspergillus niger Localization Electron microscopy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract. Using transmission electron microscopy, the amine oxidase activity in Aspergillus niger AKU 3302 was localized to the outer side of the cell wall but not inside the cell using the cerium perhydroxide deposition method. The presence of cerium in the deposit was confirmed by energy-dispersive microanalysis of X-rays. Interestingly, immunocytochemical localization using gold labeling with a specific antibody indicated the presence of amine oxidase protein inside the cell wall and not only on the outer surface. Besides labeling of the cell wall, a high level of labeling was also observed inside the cell in what seemed to be secretory vesicle structures. It is proposed that the highly active amine oxidase AO-I is located in the cell wall and serves primarily as a detoxifying agent, preventing amines from entering and damaging the cell. The amine oxidation exhibits an interesting spatial orientation involving a release of toxic hydrogen peroxide into the extracellular space. The inactive amine oxidase protein located inside the cell is most probably the amine oxidase AO-II, found in cell homogenates. It is also likely that the less active AO-II is an improperly folded precursor of AO-I, which acquired low-level activity after cell homogenization in the presence of Cu(II) and oxygen due to autooxidative formation of topaquinone.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002030000154
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  • 8
    Electronic Resource
    Electronic Resource
    Semipersistency of Myzus persicae Transmission of Cucumoviruses Systemically Infecting Leguminous Plants (2000)
    Springer
    Journal of general plant pathology 66 (2000), S. 64-67 
    Details
    ISSN: 1610-739X
    Keywords: Keywords: Cucumoviruses, leguminous plants, semipersistent transmission, Myzus persicae.
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Sequential transmission tests of Peanut stunt virus (PSV) and Cucumber mosaic virus (CMV) systemically infecting common bean, Phaseolus vulgaris, were conducted using Myzus persicae allowed to fast for 2 hr and then to acquisition feed on infected common bean plants or purified virus for 10 min. In the sequential transmission tests using either one or 10 aphids per assay plant, three isolates of PSV (J,S,Y5) and one of CMV (V) were transmitted from and to common bean up to a third or fourth inoculation access. Many aphids transmitted these viruses to two or three plants. Purified viruses of PSV-S and CMV-V were also transmitted up to a third or second inoculation access at low percentage. On tobacco, Nicotiana tabacum, aphids transmitted PSV-S and CMV-V only in the first inoculation access, although PSV-S was transmitted to only one plant in the fourth and fifth inoculation access. These viruses may be transmitted in two phases by aphids, depending on the plant species.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/PL00012922
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  • 9
    Electronic Resource
    Electronic Resource
    Detection of Thiophanate-methyl-resistant Strains in Diplocarpon mail, Causal Fungus of Apple Blotch (2000)
    Springer
    Journal of general plant pathology 66 (2000), S. 82-85 
    Details
    ISSN: 1610-739X
    Keywords: Keywords: apple, blotch, Diplocarpon mali, thiophanate-methyl-resistance.
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Isolates of Diplocarpon mali, causal fungus of apple blotch, collected from four prefectures in Japan in 1997–1998 were tested for sensitivity to thiophanate-methyl. Results from mycelial growth tests showed that MIC values of the fungicide were 0.19 μg/ml against all isolates from Akita, Nagano and Saga prefectures but 100 or 200 μg/ml against all isolates from the Tokusa area in Yamaguchi prefecture. Detached apple leaves sprayed with the fungicide developed severe symptoms when inoculated with the isolate from Tokusa, but developed no symptoms with the isolate from Nagano. These results are the first confirmation of thiophanate-methyl-resistant strains in D. mali.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/PL00012926
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  • 10
    Electronic Resource
    Electronic Resource
    Biological Mode of Action of the Fungicide, Flusulfamide, Against Plasmodiophora brassicae (clubroot) (1999)
    Springer
    European journal of plant pathology 105 (1999), S. 577-584 
    Details
    ISSN: 1573-8469
    Keywords: Evan's blue staining ; fungistatic effect ; germination inhibition ; resting spore
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract Flusulfamide (2′, 4-dichloro-α,α,α-trifluoro-4′-nitro-m-toluenesulfonanilide) was investigated for its mode of action against Plasmodiophora brassicae Woronin. Seedlings of Chinese cabbage (Brassica rapa L. subsp. pekinensis) were grown for 14 and 21 days in soil infested with P. brassicae and then transplanted into soil containing flusulfamide (0.9 µg a.i. g−1 dry soil). Clubroot was not suppressed by this treatment, indicating that the fungicide is ineffective against P. brassicae established within cortical cells of the host root. Where seedlings were grown in soil infested with resting spores which had previously been treated with flusulfamide, root-hair infection and club formation were suppressed. This indicates that flusulfamide directly acts against resting spores. When placed in root exudates of Chinese cabbage, untreated resting spores germinated at a high frequency while flusulfamide-treated resting spores hardly germinated at all. Use of the Evan's blue staining assay indicated that flusulfamide-treated resting spores remained viable. Flusulfamide was detected by high performance liquid chromatography on resting spores treated with flusulfamide for 30 min. This indicates that the chemical is adsorbed onto resting spores. These results suggest that flusulfamide suppresses clubroot disease by inhibiting germination of P. brassicae resting spores through adsorption onto their cell walls.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008722005570
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