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  • 1
    Electronic Resource
    Electronic Resource
    Novel electrical and annealing properties of defects in electron irradiated silicon p+-n junctions (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1535-1540 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Novel results on defect annealing behavior and minority-carrier lifetime control in electron irradiated silicon p+-n junctions are presented. Two mechanisms are found to be involved in the annealing process of the divacancies; one dominates in the lower temperature range (from 240 to 300 °C) and the other dominates in the higher temperature range (from 320 to 360 °C). A defect labeld as E3 with an energy level at 0.37 eV below the conduction band is found to be an efficient recombination channel responsible for minority carrier lifetime control. The activation energy for dissociation of the defect E3 obtained from the annealing study is 1.7 eV, and the frequency factor is 2.8×109 s−1. Annealing of electron irradiated samples at about 300 °C, or performing the electron irradiation at a similar high temperature is found to increase the concentration of the defect E3, and stabilize the carrier lifetime. These processes might be useful to improve the thermal stability of devices like high-voltage rectifiers and thyristors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346629
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical and optical properties of defect states induced by air plasma process in n/n+ epitaxial silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1520-1525 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and optical properties of radio frequency (rf) air plasma process-induced defect states in 50 Ω cm n/n+ epitaxial silicon are investigated by junction capacitance techniques. Capacitance-voltage measurements reveal the presence of a thin oxide layer of about 180 A(ring) on the 30-min plasma treated silicon sample. Deep level transient spectroscopy shows the existence of various defects in the sample. These consists of a dominant bulk electron trap labelled as E(0.46) at 0.46 eV below the conduction band, as well as continuously distributed interface states. The spectral dependence of the optical cross section for the defect levels were measured by deep level optical spectroscopy. A simple analysis indicates that a phonon mode ((h-dash-bar)ωp=28 meV) couples to the defect E(0.46). Its electron-phonon coupling strength is rather weak with a Franck–Condon shift of 0.04 eV. Defect E(0.46) anneals out at a fairly low temperature of about 120 °C. Etching off the oxide layer in a diluted HF solution was found to eliminate the E(0.46) defect level. This is tentatively explained as due to passivation of the defect E(0.46) by hydrogen from the HF solution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346627
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  • 3
    Electronic Resource
    Electronic Resource
    A plasma etching-induced defect state in electron-irradiated n-type bulk section (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 897-899 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defect states induced by radio frequency air plasma etching process in n-type bulk silicon have been studied. Deep level transient spectroscopy shows that a deep center with a small electron capture cross section σtn =1.3×10−20 cm−3 and an energy level at 0.41 eV below the conduction band was induced by plasma treatment of previously electron-irradiated Si samples. The spectral dependence of optical cross sections for this defect level was measured by deep level optical spectroscopy, showing that the defect has a strong electron-phonon coupling with a Franck–Condon shift of about 0.4 eV, and that the defect core is repulsive for electrons. The defect anneals out above 400 K, and is also slightly unstable at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346755
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  • 4
    Electronic Resource
    Electronic Resource
    Quality of ZnSe/GaAs epilayers studied by spatial correlation model of Raman scattering (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2845-2847 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, the spatial correlation model has been used for interpreting the line shapes of the first-order longitudinal-optical phonon Raman spectra of ZnSe/GaAs epitaxial layers. The good agreement between theoretical line shapes and the experiment measurements was illustrated for the samples grown by the molecular beam epitaxy (MBE), hot wall epitaxy (HWE), and hot wall beam epitaxy (HWBE).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109229
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  • 5
    Electronic Resource
    Electronic Resource
    Dictyoxepin and dictyolene, two new diterpenes from the marine alga Dictyota acutiloba (Phaeophyta) (1977)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 99 (1977), S. 3516-3517 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00452a062
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  • 6
    Electronic Resource
    Electronic Resource
    Defect properties in silicon induced by rf plasma irradiation
    Amsterdam : Elsevier
    Solid State Communications 66 (1988), S. 751-753 
    Details
    ISSN: 0038-1098
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1098(88)90998-2
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  • 7
    Electronic Resource
    Electronic Resource
    Study of power generating implantable electrodes (1968)
    Springer
    Medical & biological engineering & computing 6 (1968), S. 503-516 
    Details
    ISSN: 1741-0444
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology , Medicine
    Description / Table of Contents: Sommaire Une cellule électrochimique implantable en platine-alumine peut fournir une puissance électrique d’environ 50–75 μW. Les implantations ont été pratiquées sur 12 lapins pour des périodes allant jusqu’à 200 jours. L’intensité de la réaction initiale du tissue et l’accumulation des produits d’oxydation de l’alumine insolubles apparaissent être les facteurs limitant la puissance utile disponible. Ces données, ainsi que la faible puissance requise par les dispositifs électroniques implantés (pacemakers, radio-sondes, etc.) laissent penser que l’on pourra utiliser ces types d’électrodes comme source de puissance de longue durée.
    Abstract: Zusammenfassung Etwa 50 bis 75 μW (Mikrowatt) elektrischer Leistung können von einer implantierbaren elektrochemischen Platin-Aluminium-Zelle abgeleitet werden. Bei Kaninchen wurden sie bis zu 200 Tagen Dauer implantiert. Das Ausmaß der anfänglichen Gewebsreaktion und der Ansammlung unlöslicher Aluminiumoxydationsprodukte scheinen die Nutzleistung zu begrenzen. Diese Angaben und der niedrige Strombedarf implantierbarer elektronischer Geräte (Schrittmacher, Telemetrie usw.) lassen eine nutzbringende Anwendung dieser Elektrodentypen als Dauerstromquellen erwarten.
    Notes: Abstract Approximately 50–75 μW (microwatts) of electrical power can be obtained from an implantable platinum-black aluminum electrochemical cell. The implantations have been conducted in twelve rabbits for periods up to 200 days. The intensity of the initial tissue reaction and accumulation of insoluble aluminum oxidation products appear to be the factors limiting useful power available. These data, together with the low power requirement of implantable electronic devices (pacemakers, telemeters, etc.), suggest the feasibility of using these types of electrodes as a long term power source.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02474289
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  • 8
    Electronic Resource
    Electronic Resource
    Onset of nonlinearity in fractal dimension systems: An application to polarized bioelectrode interfaces (1988)
    Springer
    Annals of biomedical engineering 16 (1988), S. 111-121 
    Details
    ISSN: 1573-9686
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine , Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02367384
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  • 9
    Electronic Resource
    Electronic Resource
    Nonlinear phenomenon of interfacial polarization immittance of a Pt electrode (1990)
    Springer
    Annals of biomedical engineering 18 (1990), S. 505-518 
    Details
    ISSN: 1573-9686
    Keywords: Electrode ; Nonlinear system ; Measurement
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine , Technology
    Notes: Abstract Description of a computerized, automated method to measure the interfacial polarization immittance of a Pt electrode in nonlinear range is presented. The classical three-electrode setup is used for measurements in conjunction with a special purpose software implemented on a Unix computer using C language. A collection of data at very low frequencies (below 2 Hz) and at high input intensities with various dc biases imposed on the input are presented to show the behavior of the interface in nonlinear range. The instrument also provides on-line harmonic analysis of the output signal, by calculating the first four Fourier series coefficients, in response to a pure sinusoidal input.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02364614
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  • 10
    Electronic Resource
    Electronic Resource
    Fractal system — A time domain approach (1990)
    Springer
    Annals of biomedical engineering 18 (1990), S. 597-621 
    Details
    ISSN: 1573-9686
    Keywords: Fractal systems ; Bioelectrode ; Cardiovascular system
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine , Technology
    Notes: Abstract A method to analyze the fractal system in the time domain is presented so that the dynamic behavior of the system can be studied. The fractal system is represented by a set of linear time-varying differential equations whose order depends on the order of the system under non-fractal condition. Four different types of fractal system are considered and their solutions in the time domain are presented. These analyses show that the fractal system is dynamically more stable with smooth changes of magnitude and less oscillatory than the non-fractal system. Examples of the physiological system of the conduction pathways in the heart and also the polarization phenomena of noble metal are presented to illustrate the phonomena.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02368450
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