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  • 1
    Electronic Resource
    Electronic Resource
    Paraffin-Cycloparaffin Separations by Liquid Displacement Partition Chromatography (1957)
    s.l. : American Chemical Society
    Analytical chemistry 29 (1957), S. 1327-1331 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac60129a023
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  • 2
    Electronic Resource
    Electronic Resource
    Semiconductor nanostructures defined with self-organizing polymers (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 6057-6059 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a technique to create very small semiconductor nanostructures, with sizes far beyond the limit of conventional optical lithography processes, by the use self-assembling diblock copolymers as nanolithographic masks. Quantum structures with very high aspect ratio of 1:10 were fabricated by dry etching. In a first step, so-called diblock copolymer micelles were generated in a toluene solution. These micelles were loaded by a noble-metal salt. After dipping a substrate into this solution, a monolayer of ordered micelles is generated, covering almost the complete surface. After treatment in a hydrogen plasma all of the organic components are removed and only crystalline metal clusters of (approximate)12 nm size remain. This metal cluster mask can be used directly in a chlorine dry etching process to etch cylinders in GaAs and its alloys of In and Al. It is also possible to etch through a quantum well layer underneath the surface in order to produce quantum dots. The resulting nanostructures were investigated by scanning force microscopy, by high resolution transmission electron microscopy, and also by low temperature photoluminescence spectroscopy. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1465117
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  • 3
    Electronic Resource
    Electronic Resource
    Temperature dependence of the E2 and A1(LO) phonons in GaN and AlN (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6256-6260 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The frequencies and dampings of the zone-center optical phonons E2 and A1(LO) in wurtzite-type GaN and AlN layers have been measured by Raman spectroscopy in the temperature range from 85 to 760 K. The GaN layer was grown by metalorganic vapor phase epitaxy and the AlN layer by molecular beam epitaxy both on sapphire substrate. The experimentally obtained frequencies and dampings are modeled by a theory taking into account the thermal expansion of the lattice, a symmetric decay of the optical phonons into two and three phonons of lower energy, and the strain in the layers induced by the different thermal expansion coefficients of layer and substrate. The results were used to determine the local temperature of a GaN pn diode in dependence on the applied voltage. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371681
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  • 4
    Electronic Resource
    Electronic Resource
    Measurement of time-resolved photoluminescence of semiconductors using correlational analysis (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 2890-2893 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present a new method for measuring time-resolved photoluminescence on a time scale of microseconds and milliseconds using correlational analysis, and we demonstrate it to work on porous silicon and GaP:Fe. We modulate the pumping laser with a pseudorandom binary sequence which yields correlational properties similar to white noise. The photoluminescence decay is computed via cross correlation of the detector signal with the pumping sequence. The presented method is highly sensitive, simple in application, and inexpensive.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144633
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  • 5
    Electronic Resource
    Electronic Resource
    Catalytic Surfaces and the Hydrolysis of Diethyl Carbonate1 (1952)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 74 (1952), S. 3116-3120 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01132a048
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  • 6
    Electronic Resource
    Electronic Resource
    Temperature-dependent lifetime distribution of the photoluminescence S-band in porous silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4167-4170 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the recombination mechanism of the visible photoluminescence (PL) S-band in p-doped porous Si layers by time-resolved photoluminescence. From the observed "stretched-exponential'' PL decays we present a simple yet accurate evaluation method for lifetime distributions G(τ) and average recombination lifetimes 〈τ〉. The average lifetimes feature a strong temperature dependence and a characteristic thermal activation energy of 10–20 meV for low temperatures. Our results are discussed within the models of quantum-confined exciton recombination and surface state recombination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355999
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  • 7
    Electronic Resource
    Electronic Resource
    Electroluminescence, photoluminescence, and photocurrent studies of Si/SiGe p-i-n heterostructures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3017-3023 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Comparative electroluminescence and photoluminescence measurements were performed on Si/Si0.7Ge0.3 p-i-n single quantum well structures, and on one p-i-n and one undoped multiple quantum well structure in a wide temperature range. The samples were grown pseudomorphically by molecular beam epitaxy, and mesa diodes for electroluminescence and photocurrent measurements were fabricated. In electroluminescence, optical emission comes primarily from the SiGe quantum wells whereas no emission from Si is observed except for high temperatures of ≈200 K and up. All p-i-n structures exhibit maximum emission intensities in a temperature range between 80 K and 220 K, depending on the quantum well width. This temperature characteristic is very different from undoped quantum well samples. A model is discussed that accounts satisfactorily for all observed temperature dependent data. As an essential feature, the model includes Auger recombination in addition to radiative recombination in the n+ and p+ sides of the junctions and in the SiGe quantum well due to the high electron or hole densities in these regions. Photocurrent spectra due to single quantum wells are measured showing the SiGe absorption threshold in addition to the Si threshold. Quantitative fits to these spectra yield threshold energies for SiGe and Si consistent with the electroluminescence spectra. The question of how photogenerated excess holes that are bound in a quantum well can escape the well at 4.2 K to yield the measured photocurrents is discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363129
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  • 8
    Electronic Resource
    Electronic Resource
    An engineered intersubunit disulfide enhances the stability and DNA binding of the N-terminal domain of .lambda. repressor (1986)
    s.l. : American Chemical Society
    Biochemistry 25 (1986), S. 5992-5998 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00368a024
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  • 9
    Electronic Resource
    Electronic Resource
    Observation of boron bound excitons in boron-implanted and annealed natural IIa diamonds (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2668-2670 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cathodoluminescence at 77 K was used to study the optical properties of ion-implanted and annealed natural type IIa diamonds. The substrates were implanted at room temperature with 12C+, 11B+, 31P+, and 75As+ -ions with energies of up to 350 keV and doses of up to 3×1013 cm−2. After annealing at 1200 °C, the cathodoluminescence spectra show a number of transitions which are induced by the radiation damage independent of the implanted ion species. Only in the B+implanted samples are there two transitions related to the implanted ion species: the 4.5 eV band and the boron bound exciton. The appearance of the bound exciton spectrum demonstrates the presence of isolated boron on substitutional lattice sites implying electrical acceptor activity. Our annealing studies indicate a minimum annealing temperature of 1000 °C for the activation of the implanted boron atoms onto the acceptor states. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120173
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  • 10
    Electronic Resource
    Electronic Resource
    Changes in the electronic properties of bulk GaAs by thermal annealing (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1472-1474 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bulk GaAs grown by the Bridgman technique changes its electronic properties in response to heat treatment. These changes were studied by deep level transient spectroscopy, photoluminescence, and Hall effect measurements. We report the dependence of the conductivity changes on starting material composition, annealing temperature, and annealing duration. The changes are related to the stability of a shallow acceptor which is present in concentrations ≥1016 cm−3 and reflect the equilibration of native defects introduced during the crystal growth process. The implication of this study is that as-grown GaAs is a metastable material with its ultimate electrical properties being determined by process conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99102
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