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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of semiconductor heterojunctions using internal photoemission (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8470-8474 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Internal photoemission is a photoelectric characterization technique commonly used to study semiconductor heterojunction characteristics. Previous analyses of internal photoemission including those of Fowler, Kane, and Powell have been well accepted and applied; however, the quantum effects were not fully taken into account. We examined the quantum effects on internal photoemission spectra and found that the photoemission yield, Y(hν), is proportional to (hν−ET)γ, where hν is the photon energy, ET is the threshold energy, and γ is a constant determined by the emitter density of states, the transmission probability, and the collector conduction band density of states, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362522
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  • 2
    Electronic Resource
    Electronic Resource
    Threshold shifting in pseudomorphic semiconductor-insulator-semiconductor heterostructure field-effect transistors (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2285-2287 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pseudomorphic (In,Ga)As layers are used in GaAs-based semiconductor-insulator- semiconductor (SIS) structures to shift the threshold voltage from the natural, near-zero value. The threshold voltage is shifted positively for (In,Ga)As gate layers, and negatively for (In,Ga)As channel layers, by the (In,Ga)As/GaAs conduction-band offset. The thermionic and field emission barrier heights agree with shifts obtained in capacitance-voltage characteristics. The structures withstand implant activation anneals, establishing a simple technology to create either enhancement or depletion-mode devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104900
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  • 3
    Electronic Resource
    Electronic Resource
    Oligophenyl-based organic thin film transistors (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3853-3855 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Organic thin film transistors (TFTs) have been fabricated using thermally evaporated films of the oligophenyls p-quaterphenyl (p-4P), p-quinquephenyl (p-5P), and p-sexiphenyl (p-6P). The field-effect mobility of these TFTs ranges from 10−2 cm2/V s for p-4P to 10−1 cm2/V s for p-6P with on/off current ratio from 105 to 106. These values are comparable to those achieved using the more widely studied organic semiconductors alpha-sexithienyl (α-6T) and pentacene. X-ray diffraction reveals a high degree of molecular ordering, believed to be important for obtaining high field-effect mobility in organic TFTs. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120524
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  • 4
    Electronic Resource
    Electronic Resource
    Crossover from tunneling to metallic behavior in superconductor-semiconductor contacts (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1811-1813 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe current-voltage measurements on superconducting Nb/InGaAs junction field-effect transistors which reveal a crossover from tunneling-dominated to Andreev scattering-dominated transport at the superconductor-semiconductor contacts as Schottky barrier thickness decreases with increasing interfacial dopant concentration. These measurements are the first demonstration of such a crossover in a thin-film structure, and are of interest for investigations of hybrid superconductor-semiconductor devices, proximity effect boundary conditions, and transport in ohmic contacts to semiconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104029
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  • 5
    Electronic Resource
    Electronic Resource
    Superconducting InGaAs junction field-effect transistors with Nb electrodes (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1909-1911 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the design, fabrication, and characterization of superconducting In0.47Ga0.53As junction field-effect transistors (JFETs) with Nb source and drain electrodes. In0.47Ga0.53As has the advantage of combining large coherence length and high Schottky barrier transmission, making it a very attractive material on which to base superconducting FETs. At large voltages these devices behave as normal FETs in either enhancement or depletion modes, while at small voltages they act as Josephson junctions or super-Schottky diodes. Both normal and super- currents are controlled by the gate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102166
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  • 6
    Electronic Resource
    Electronic Resource
    Ion implantation and annealing of undoped (Al,Ga)As/GaAs heterostructures (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1459-1461 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical measurements of n+-GaAs/π-(Al,Ga)As/π-GaAs semiconductor-insulator-semiconductor (SIS) heterostructure capacitors and field-effect transistors (FET's) show that the (Al,Ga)As/GaAs heterojunction abruptness is well preserved for an arsine flash anneal of 1 s at temperatures up to ∼900 °C. The heterostructure stability is also preserved for a low-dose silicon implant across the (Al,Ga)As/GaAs heterojunction and subsequent annealing. Arsenic overpressure is found to be necessary, even for short time annealing, to prevent excessive As loss from a GaAs or (Al,Ga)As surface. High mobility enhance–deplete heterostructure SISFET's with sharp current versus voltage (I-V) turn-on characteristics have been fabricated using ion implantation and arsine flash anneal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98657
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  • 7
    Electronic Resource
    Electronic Resource
    Accumulation capacitance for GaAs-SiO2 interfaces with Si interlayers (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1919-1921 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the properties of metal-oxide-semiconductor (MOS) structures fabricated by remote plasma-enhanced chemical vapor deposition of SiO2 upon GaAs substrates. For n-type GaAs, a silicon interlayer has been found to improve the interface properties. For our samples and this interlayer, integration of the quasi-static capacitance curve indicates a band-bending range of about 0.8 eV. For these samples, we observe a hysteresis of ∼0.6 V, and shifts of only 0.2 V in the midpoint of the rise from minimum to maximum capacitance upon changing frequency from 10 to 200 kHz at room temperature. Similar measurements for temperatures down to 80 K establish that even at such low temperatures an accumulation capacitance is observed. This sets an upper limit of about 70 meV for the separation between the interface Fermi level and the conduction-band minimum. This limit is a factor of two smaller than the best previously reported limit for approach to the conduction band of GaAs in a MOS structure. Spectroscopic ellipsometry establishes that nearly 2 A(ring) equivalent thickness of unoxidized silicon is at the SiO2/GaAs interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104012
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  • 8
    Electronic Resource
    Electronic Resource
    Enhanced Schottky barriers produced by recoil implantation of Mg into n-GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1696-1698 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Enhancement of Schottky barrier height of Ti-Pt-Au on n-type GaAs was obtained by heavily (2×1018 cm−3) counter doping the near-surface region of the substrate. The p-type region was produced by recoil implantation of Mg from a Mg thin film (300 A(ring)) irradiated by a 60 keV As+ beam. The film was subsequently chemically etched. The recoil-implanted samples showed an enhancement of 140 meV in the Schottky barrier height following rapid thermal annealing in an AsH3 furnace at 850 °C for nominal zero second.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101306
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  • 9
    Electronic Resource
    Electronic Resource
    Investigation of stress effects on the direct current characteristics of GaAs metal-semiconductor field-effect transistors through the use of externally applied loads (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1800-1802 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter describes an experimental investigation of the effects of mechanical stress on the direct current (dc) electrical parameters in GaAs metal-semiconductor field-effect transistors, with the aim of separating out those effects which are direct manifestations of residual stresses in the completed device (e.g., piezoelectric effects) from stress effects which manifest themselves during the device processing (e.g., stress-enhanced diffusion during implant annealing). This study extends previous work by examining individual transistors under both tensile and compressive loads. Systematic yet nonmonotomic variations in the dc parameters observed in several devices also suggest the possibility of defect generation in the device structures, even at relatively low bulk stresses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99630
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  • 10
    Electronic Resource
    Electronic Resource
    Systematics of electron mobility in Si/SiGe heterostructures (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 794-796 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated limits to the low temperature electron mobility in modulation-doped Si/SiGe heterostructures grown by ultrahigh vacuum chemical vapor deposition. The temperature dependence and peak value of the mobility suggest that interface roughness is the chief scattering mechanism in samples with a thin buffer layer below the channel. Up to about 2 μm, increasing the thickness of the buffer layer raises the mobility. We have also observed a systematic increase of electron mobility with spacer (or setback) thickness, which is characteristic of remote ion scattering. The influence of background impurities is seen in the decrease of mobility with decreasing two-dimensional gas density.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109910
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