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  • 1
    Electronic Resource
    Electronic Resource
    The structural, chemical, and electronic properties of a stable GaS/GaAs interface (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6940-6944 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A stable GaS passivating layer was deposited on GaAs using α-Ga2S3 powder as a single-source precursor. Both good crystal quality and clean GaS/GaAs interface were achieved. Electron-energy-loss spectra showed that the sulfide material has a band gap of 3.0 eV. The valence band discontinuity of the heterostructure was determined to be 1.9 eV from a series of ultraviolet photoelectron spectra with increasing deposition thickness. Al/GaS/GaAs metal-insulator-semiconductor structures exhibited typical high frequency capacitor versus voltage (C–V) behavior with very small loop hysteresis. The C–V curves showed no aging after 20 months. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371776
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  • 2
    Electronic Resource
    Electronic Resource
    A mild electrochemical sulfur passivation method for GaAs(100) surfaces (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2764-2766 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a mild electrochemical sulfurization technique which can form a very thick sulfide layer on GaAs(100) surface. This sulfide layer is quite stable in air. The photoluminescence spectrum of such anodic sulfurized GaAs surface shows a large intensity enhancement as compared with that of as-etched GaAs samples. No visual intensity decay occurs under the laser beam illumination after the sample has been maintained in air for more than seven months. The structure and composition of the passivation layers are investigated by x-ray photoelectron spectroscopy and the mechanism of layer formation is discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360074
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  • 3
    Electronic Resource
    Electronic Resource
    Energy level alignment at Alq/metal interfaces (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1593-1595 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energy level alignment for both Mg/8-hydroxyquinoline aluminum (Alq) and Au/Alq interfaces has been determined by the ultraviolet photoemission measurements. For both interfaces, the difference between the Fermi level and the low-energy edge of the highest occupied molecular orbital (HOMO) is around 1.7 eV. This implies that the Fermi level with respect to the HOMO edge of Alq is independent of the work function of Mg and Au despite a large difference in the metal work function. A Fermi level alignment model is proposed, invoking a charge transfer between the metal and Alq and the formation of a dipolar layer at the metal/Alq interface. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121125
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  • 4
    Electronic Resource
    Electronic Resource
    Investigation of neutralized (NH4)2S solution passivation of GaAs (100) surfaces (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3081-3083 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Synchrotron radiation photoelectron spectroscopy combined with scanning electron microscopy (SEM) and gravimetry has been used to study GaAs (100) surfaces treated with a neutralized (NH4)2S solution. Compared to the conventional basic (NH4)2S solution treatment, a thick Ga sulfide layer and strong Ga–S bond were formed on the GaAs surface after dipping GaAs wafers in a neutralized (NH4)2S solution. Gravimetric data show that the etching rate of GaAs in the neutralized (NH4)2S solution is about 15% slower than that in the conventional (NH4)2S solution. From SEM observation, fewer etching pits with smaller sizes were found on the neutralized (NH4)2S-treated GaAs surface. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120252
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  • 5
    Electronic Resource
    Electronic Resource
    Energy band lineup at the porous-silicon/silicon heterointerface measured by electron spectroscopy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3602-3604 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energy band gap of light-emitting porous silicon is determined by high-resolution electron energy loss spectroscopy, and the valence band edge of porous silicon with respect to its Fermi level is measured by ultraviolet photoelectron spectroscopy. By combining the results with that measured from clean Si, a picture of band lineup at the porous-silicon/p-Si heterointerface is proposed, in which 70% of the total band gap discontinuity occurs at the valence band edge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111212
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  • 6
    Electronic Resource
    Electronic Resource
    Critical conditions for achieving blue light emission from porous silicon (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2363-2365 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By observing the luminescence micrographic images and measuring the decay behaviors of photoluminescence spectra, it is found that the blue light-emitting porous silicon obtained by boiling water treatment behaves very similarly to the red light-emitting sample. It is thus believed that the blue light emission is originated from the porous silicon skeleton rather than impurity contaminations. The achievement of blue light emission requires the proper control of the size of the Si nanostructures, effective passivation of the internal surfaces of porous silicon layer, and keeping a mechanically strong Si skeleton. A theoretical estimation and the experiments show that the simultaneous fulfillment of these conditions is quite critical, which explains the poor reproducibility of achieving blue emission experimentally.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110502
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  • 7
    Electronic Resource
    Electronic Resource
    Large blue shift of light emitting porous silicon by boiling water treatment (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1097-1098 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A boiling water treatment of light emitting porous silicon can give rise to a large blue shift of its photoluminescence spectrum and meanwhile strengthen the skeleton of porous Si by filling up many pores with aqueous oxide. A stable blue-green light emission at the peak wavelength down to 500 nm is achieved. FTIR measurements show that the formation of Si dihydride on the sidewall surfaces of the Si rods is not responsible to the visible luminescence for the very thin Si wires.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108753
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  • 8
    Electronic Resource
    Electronic Resource
    Molecular-beam-epitaxy growth of GaN on GaAs(100) by using reactive nitrogen source (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 315-317 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using a cold cathode ion gun to ionize the nitrogen gas, the molecular-beam-epitaxy growth of GaN is carried out. The zinc-blende structure GaN epilayer grown on the GaAs(100) substrate with a narrow x-ray diffraction peak width (FWHM) of 23 min and a low carrier concentration of 1017 cm−3 is achieved. The surface optical phonon energies of cubic and hexagonal GaN are experimentally determined to be 82 and 90 meV, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111190
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  • 9
    Electronic Resource
    Electronic Resource
    S2Cl2 treatment: A new sulfur passivation method of GaAs surface (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3425-3427 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a new sulfur passivation method—S2Cl2 treatment, which is quite effective for removing the surface oxide layer of GaAs and passivating the surface with monolayer thick sulfides. Photoluminescence (PL) spectroscopy, Auger electron spectroscopy (AES), and x-ray photoelectron spectroscopy (XPS) are used to study the passivated GaAs (100) surfaces. The results of PL reveal that the PL intensity increases by two orders of magnitude, which is indicative of the reduction of surface recombination velocity of GaAs by this treatment. AES data prove that the sulfurized surface contains S, Ga, As, C, and small amount of Cl atoms but no oxygen signal at all. XPS study shows that sulfur atoms bond to both Ga and As atoms more effectively on S2Cl2 treated surfaces than those passivated by (NH4)2Sx.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111261
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  • 10
    Electronic Resource
    Electronic Resource
    Electrochemical sulfur passivation of GaAs (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2252-2254 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An anodic sulfurized treatment of GaAs has been developed to passivate its surfaces preventing oxidation. The photoemission core level spectra show that the surface Ga and As atoms are bonded to S atoms to form a thick sulfurized layer. No oxygen uptakes on the sulfurized GaAs surface as illustrated by the high resolution electron energy loss spectroscopy. The results of photoluminescence spectra verify that the passivated surface has low surface recombination velocity and can protect the photoassisted oxidation under laser illumination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107475
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