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  • 1
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    Chronic receptor-mediated activation of Gi/o proteins alters basal t-tubular and sarcolemmal L-type Ca2+ channel activity through phosphatases in heart failure (2012)
    The American Physiological Society (APS)
    Details
    Publication Date: 2012-04-16
    Description: L-type Ca 2+ channels (LTCCs) play an essential role in the excitation-contraction coupling of ventricular myocytes. We previously found that t-tubular (TT) LTCC current density was halved by the activation of protein phosphatase (PP)1 and/or PP2A, whereas surface sarcolemmal (SS) LTCC current density was increased by the inhibition of PP1 and/or PP2A activity in failing ventricular myocytes of mice chronically treated with isoproterenol (ISO mice). In the present study, we examined the possible involvement of inhibitory heterotrimeric G proteins (G i/o ) in these abnormalities by chronically administrating pertussis toxin (PTX) to ISO mice (ISO + PTX mice). Compared with ISO mice, ISO + PTX mice exhibited significantly higher fractional shortening of the left ventricle. The expression level of Gα i2 proteins was not altered by the treatment of mice with ISO and/or PTX. ISO + PTX myocytes had normal TT and SS LTCC current densities because they had higher and lower availability and/or open probability of TT and SS LTCCs than ISO myocytes, respectively. A selective PKA inhibitor, H-89, did not affect LTCC current densities in ISO + PTX myocytes. A selective PP2A inhibitor, fostriecin, did not affect SS or TT current density in control or ISO + PTX myocytes but significantly increased TT but not SS LTCC current density in ISO myocytes. These results indicate that chronic receptor-mediated activation of G i/o in vivo decreases basal TT LTCC activity by activating PP2A and increases basal SS LTCC activity by inhibiting PP1 without modulating PKA in heart failure.
    Print ISSN: 0363-6135
    Electronic ISSN: 1522-1539
    Topics: Medicine
    Published by The American Physiological Society (APS)
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    PAPER CURRENT
  • 2
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    Zoanthids of the Cape Verde Islands and their symbionts: previously unexamined diversity in the Northeastern Atlantic (2010)
    In:  Contributions to Zoology vol. 79 no. 4, pp. 147-163
    Details
    Publication Date: 2024-01-12
    Description: The marine invertebrate fauna of the Cape Verde Islands contains many endemic species due to their isolated location in the eastern Atlantic, yet research has not been conducted on most taxa here. One such group are the zoanthids or mat anemones, an order of benthic cnidarians (Hexacorallia: Zoantharia) common in many marine environments. In this study, the diversity of zoanthids in the Cape Verde Islands is specifically examined for the first time. Field images and sampling are combined with molecular phylogenetic analyses utilizing two mitochondrial DNA markers (cytochrome oxidase subunit I and 16S ribosomal DNA) to determine the number of species present. Specimens from eight species (Palythoa caribaeorum, Palythoa sp. 265, Zoanthus aff. pulchellus, Isaurus tuberculatus, Parazoanthus sp. 269, Parazoanthus sp. 1401, Antipathozoanthus macaronesicus, Terrazoanthus sp. 276) were identified, including two to four species that are likely new to science. Additional examinations of Symbiodinium endosymbionts in zooxanthellate species showed that clades A, B, and C were present; this is the first report of clade B associating with a zoanthid species. An appendix describing the eight zoanthid species found in the Cape Verde Islands is included to provide a base for future zoanthid research in this region.
    Keywords: Cape Verde Islands ; Cnidaria ; Symbiodinium ; undescribed species ; zoanthid
    Repository Name: National Museum of Natural History, Netherlands
    Type: info:eu-repo/semantics/article
    Format: application/pdf
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    PAPER (OA)
  • 3
    Electronic Resource
    Electronic Resource
    Longitudinal mode stability difference in Se- and Si-doped AlGaAs lasers (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5344-5346 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The longitudinal mode behavior of AlGaAs lasers with n-type cladding layers doped with Se and Si is reported. The longitudinal mode of the lasers with highly Se-doped cladding layer is stabilized, and large hysteresis of mode jump is observed as temperature changes. In the case of highly Si-doped cladding layers, however, the mode hops to the adjacent one and no hysteresis is observed. These phenomena are explained by the difference in thermal activation energy between Se- and Si-related DX centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350551
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  • 4
    Electronic Resource
    Electronic Resource
    Synchronization of Mating Reactivity Rhythms in Populations of Paramecium bursaria (1989)
    Oxford, UK : Blackwell Publishing Ltd
    The @journal of eukaryotic microbiology 36 (1989), S. 0 
    Details
    ISSN: 1550-7408
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Cell populations of Paramecium bursaria show arhythmic mating reactivity after exposure to constant light (LL) for more than 2 wk. After this arhythmic population is exposed to darkness for 9 h, the mating reactivity rhythm of the cell population reappears. The phases of rhythms in individual cells are synchronized to each other. When the arhythmic population in constant light is exposed to dark pulses of various durations, the first peak of the recovered mating reactivity rhythm appears 6 h after the end of the dark pulse. Thus, in the case of dark pulses to cells in LL, the transition from dark to light sets the phase of the subsequent mating reactivity rhythm. When an arhythmic population in LL is transferred to constant darkness (DD), a rhythm of mating reactivity also appears and, in this case, the first peak of the rhythm occurs 18 h after the LL to DD transition. Therefore, arhythmic populations of cells in LL can be synchronized by either a dark pulse or by transition to continuous darkness. When the arhythmic populations in LL were transferred to various light/dark (LD) cycles, the mating reactivity rhythms entrained to LD cycles of 18 to 30 h in duration. Finally, mating rhythms can also be synchronized by treatment with puromycin (400 μg/ml for 6–18 h).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1550-7408.1989.tb02676.x
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  • 5
    Electronic Resource
    Electronic Resource
    Skin infection caused by Mycobacterium avium (1997)
    Oxford, UK : Blackwell Publishing Ltd
    British journal of dermatology 136 (1997), S. 0 
    Details
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: A patient with skin infection due to Mycobacterium avium is reported. A 9–year–old female had 10 subcutaneous nodules and two ulcers on the abdomen and legs. She had no medical history of systemic disease, skin disease or immunosuppressive therapy. Cultures of a biopsy specimen and of aspirated seropurulent fluid in nodules showed acid–fast bacteria, identified as M. avium by the DNA–DNA hybridization method. We treated her with a combination of surgery and the antibiotics, cycloserine, isoniazid and clarithromycin.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2133.1997.d01-1183.x
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  • 6
    Electronic Resource
    Electronic Resource
    Analysis of infrared attenuated total reflection spectra from thin SiO2 films on Si (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 313-317 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared attenuated total reflection spectra from thin SiO2 films sandwiched between a Ge prism and a Si substrate were investigated. The measurements were performed in the range of Si-O-Si stretching vibrations and compared with calculated spectra using bulk values for the SiO2 dielectric function. This comparison enabled confirmation of the experimentally observed peak broadening and peak shift of the longitudinal-optical-phonon mode at ∼1250 cm−1 for films thicker than 30 A(ring) by using the exact expression for calculating p-polarized spectra. It is also shown that the linear approximation for vibrational spectroscopy in this frequency range is only valid for thicknesses less than 15 A(ring). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359394
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  • 7
    Electronic Resource
    Electronic Resource
    Quantum confinement effect in self-assembled, nanometer silicon dots (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3881-3883 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first subband energy at the valence band of self-assembled silicon quantum dots grown by low-pressure chemical vapor deposition on ultrathin SiO2/Si substrates has been measured as an energy shift at the top of the valence band density of states by using high-resolution x-ray photoelectron spectroscopy. The systematic shift of the valence band maximum towards higher binding energy with decreasing the dot size is shown to be consistent with theoretical prediction. The charging effects of the silicon dots and the SiO2 layer by photoelectron emission during the measurements have been taken into account in determining the valence-band-edge energy. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122923
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  • 8
    Electronic Resource
    Electronic Resource
    Atomic layer growth of silicon by excimer laser induced cryogenic chemical vapor deposition (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1445-1447 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline silicon has been grown by ArF excimer laser (193 nm) induced dissociation of Si2H6 adsorbed on a quartz substrate cooled to −69 °C. Silicon atomic layer growth has also been achieved by controlling the Si2H6 adsorbed layer thickness. It is found that the chemical reactivity of the first one monolayer of Si2H6 in contact with the growing Si surface is extremely high compared to that of the second or third Si2H6 layer. The effective photodissociation reaction rate at 193 nm for the first Si2H6 layer is estimated to be more than 40 times faster than that of an isolated Si2H6 molecule. Such high reactivity of the first monolayer is a possible mechanism of the self-limiting process in the atomic layer growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102493
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  • 9
    Electronic Resource
    Electronic Resource
    Digital chemical vapor deposition of SiO2 (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1096-1098 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The repetitive cycles of a few monolayers hydrogenated silicon deposition and its oxidation has been employed for the growth of SiO2. The surface reaction is promoted by an alternate irradiation of silicon hydride radical beam produced by the upstream pulsed microwave discharge of SiH4 and discharged oxygen beam. The deposition rate is controlled by the flow velocity of silane gas jet and substrate temperature. It is shown that the deposition species ejected with supersonic velocity into a high vacuum reactor conformably fills the SiO2 film into a deep Si trench.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104284
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  • 10
    Electronic Resource
    Electronic Resource
    Low-temperature nitridation of fluorinated silicon dioxide films in ammonia gas (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 981-983 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new technique of growing nitrided oxide at low temperatures has been developed. Fluorine-enhanced thermal oxidation of silicon in O2+NF3 at temperatures below 800 °C and subsequent annealing of the fluorinated oxide in pure ammonia gas at the same temperature result in the formation of nitrided oxide. The dielectric breakdown strength of the fluorinated oxide is improved by the nitridation. Also, the nitrided oxide acts as a protective layer against alkaline ion contamination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98783
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