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  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence of acceptor states in mercury implanted gallium arsenide (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2021-2022 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have shown the presence of a free-to-bound photoluminescence peak associated with the presence of mercury sitting substitutionally on a gallium site. The acceptor level for mercury is found to be approximately 58 meV above the valence-band maxima.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351142
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  • 2
    Electronic Resource
    Electronic Resource
    The effects of ion implantation on the interdiffusion coefficients in InxGa1−xAs/GaAs quantum well structures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1686-1692 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence coupled with repetitive thermal annealing has been used to determine the diffusion coefficients for intermixing in InxGa1−xAs/GaAs quantum wells and to study the subsequent effects of ion implantation on the intermixing. It is shown that following ion implantation there is a very fast interdiffusion process, which is independent of the implanted ion and that is thought to be due to the rapid diffusion of interstitials created during the implantation. Following this rapid process, it was found that neither gallium nor krypton ions had any effect on the subsequent interdiffusion coefficient. Following arsenic implantation in addition to the initial damage related process, an enhanced region of interdiffusion was observed with a diffusion coefficient that was an order of magnitude greater than that of an unimplanted control wafer. This enhanced process is thought to be due to the creation of group III vacancies by the arsenic atoms moving onto group V lattice sites. This fast process was present until the structure had broadened by about 75 A(ring) when the diffusion coefficient returned to the unimplanted control value. The activation energy for the interdiffusion was measured over the temperature range 1050–750°C and a value of 3.7±0.1 eV was measured. This was found to be independent of the implanted ion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353204
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  • 3
    Electronic Resource
    Electronic Resource
    Interdiffusion in InGaAs/GaAs quantum well structures as a function of depth (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3782-3786 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interdiffusion in InGaAs/GaAs quantum wells has been studied using photoluminescence to follow the development of the diffusion with time in a single sample. Two distinct regimes are seen; a fast initial diffusion and a second steady-state diffusion. The steady-state diffusion was found to be dependent on the depth of the quantum well from the surface and to correlate with published data on the indiffusion of gallium vacancies into gallium arsenide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352884
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  • 4
    Electronic Resource
    Electronic Resource
    The effects of silicon and beryllium on the interdiffusion of GaAs/ AlxGa1−xAs and InxGa1−xAs/GaAs quantum well structures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7715-7719 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of silicon and beryllium at doping levels of up to 1019 cm−3 on the interdiffusion of GaAs/AlxGa1−xAs and InxGa1−xAs/GaAs quantum wells after annealing have been studied using photoluminescence. It was found that for beryllium concentrations up to 2.5 ×1019 cm−3 and for silicon doping concentrations up to 1018 cm−3, no change in the interdiffusion coefficients could be measured. For a silicon doping concentration of 6×1018 cm−3 a dramatic degradation of the material quality was observed following annealing at 750 °C for 15 s. This resulted in the luminescence from the well disappearing and the appearance of deep level luminescence related to donor-gallium vacancy complexes and arsenic antisite defects. From these results we suggest that the position of the Fermi level plays no role in the intermixing of III-V heterostructures and that most of the enhanced intermixing observed in silicon-doped GaAs/AlxGa1−xAs structures is related to silicon relocation at very high doping levels.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353969
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  • 5
    Electronic Resource
    Electronic Resource
    Radiative recombination mechanisms in aluminum tris(8-hydroxyquinoline): Evidence for triplet exciton recombination (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 781-785 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence of aluminum tris(8-hydroxyquinoline) (AlQ) has been studied as a function of temperature and excitation wavelength. It was found that as the temperature and excitation energy is reduced the peak of the photoluminescence moves to longer wavelengths and broadens significantly. The photoluminescence spectra obtained at all temperatures and excitation energies can be deconvolved into three distinct peaks originating from three levels within the molecule. A rate-equation approach has been used to model the observed behavior and to obtain the relative lifetimes of the three processes responsible for the photoluminescence. From this we infer that at low temperatures and excitation energies the radiative recombination of triplet excitons is responsible for a significant amount of the photoluminescence of AlQ. It is this process which is responsible for the low energy tail seen in the photoluminescence of AlQ but which is not present in the electroluminescence. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373802
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  • 6
    Electronic Resource
    Electronic Resource
    Comparative study of silicon nitride encapsulated and phosphine overpressure annealing on the interdiffusion of InxGa1−xAs-InxGa1−xAsyP1−y heterostructures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1463-1465 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal interdiffusion on the group-V sublattice in InxGa1−xAs-InxGa1−xAsyP1−y quantum-well structures has been characterized for samples annealed either with silicon nitride encapsulation or under a phosphine overpressure in two different metalorganic vapor-phase-epitaxy reactors under different phosphine overpressures. Under all conditions the interdiffusion lengths were found to be comparable, with only small effects due to the phosphine overpressure. This suggests that interdiffusion results obtained from silicon nitride capped samples can be applied to the interdiffusion that occurs during growth conditions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358893
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  • 7
    Electronic Resource
    Electronic Resource
    Diffusion of ion beam created vacancies and their effect on intermixing: A gambler's ruin approach (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3367-3371 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion implantation has frequently been shown to modify the shape of quantum wells following thermal annealing by enhancing the interdiffusion. We have shown that, independent of chemical effects on the interdiffusion, there is a contribution from the vacancies created by the implant. The effects of the diffusion of these vacancies can be modeled using a very simple expression that does not rely on any knowledge of the diffusion coefficients for the vacancies in the material. By comparing the problem to the classic problem of the gambler's ruin, we have shown that implantation into a surface should produce even intermixing of layers at different depths below it, ignoring the effects of vacancy trapping and other depth dependent diffusion processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357462
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  • 8
    Electronic Resource
    Electronic Resource
    Photoluminescence of deep levels in ion-implanted AlxGa1−xAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1404-1406 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effect of ion implantation of donors into AlxGa1−xAs epilayers and have shown the presence of two deep level luminescence centers whose emission energies are strongly dependent on aluminum concentration. The variation of the intensity of these levels with annealing conditions gives an activation energy for their annihilation and this is found to be in agreement with that obtained from electrical data. From this, a model for the electrical activation of sulphur-implanted GaAs is proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105206
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  • 9
    Electronic Resource
    Electronic Resource
    Characteristics of rare-earth element erbium implanted in silicon (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 432-433 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rare-earth element erbium implanted into silicon was studied by photoluminescence and Rutherford backscattering analysis. Two sets of luminescent bands related to the weakly crystal field split spin-orbit levels 4I13/2→4I15/2 of Er 3+ (4f 11) at different lattice sites having different symmetries were observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101888
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  • 10
    Electronic Resource
    Electronic Resource
    Characterization of thermally annealed In0.2Ga0.8As/GaAs single quantum wells by optical spectroscopy and ion beam techniques (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 40-42 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion from ultrathin (10 nm) strained GaAs/In0.2Ga0.8As/GaAs single quantum wells (SQWs) subjected to rapid thermal annealing up to 1050 °C was followed using luminescence and Rutherford backscattering spectroscopy (RBS) in combination with channeling. The SQW shapes (In profiles) determined with the help of RBS have been compared with those predicted from optical measurements. A satisfactory agreement between diffusion length of In at 1050 °C, evaluated using both experimental methods, has been obtained. Angular scans across the 〈110〉 axial channel in the (100) plane were applied to study the strain relaxation in SQWs. No signs of generation or misfit dislocation were found, confirming that the strain relaxes solely via intermixing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110914
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