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  • 1
    Electronic Resource
    Electronic Resource
    Cross-section transmission electron microscopy study of carbon-implanted layers in silicon (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 798-800 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used cross-section transmission electron microscopy (XTEM) to study microstructures of carbon-implanted silicon layers after high-temperature annealing. It was found that the threshold dose for extended defect formation was much higher for carbon implantation than for other ion species such as B, P, and O. In 2.4 MeV carbon-implanted layers, no dislocations were formed for doses as high as 2×1016 cm−2 after annealing at 1000 °C for 1 h. The threshold was found to be lower for low-energy implantation (100 keV): at a dose of 2×1016 cm−2, when an amorphous layer was formed, microtwins were formed near the projected range upon annealing. Microprecipitates around 50 A(ring) in size were observed in low-energy carbon-implanted samples and the precipitates appeared to be under strain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103424
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  • 2
    Electronic Resource
    Electronic Resource
    Transfer of patterned ion-cut silicon layers (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2772-2774 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The technique of transferring patterned ion-cut layers from one Si wafer to another was demonstrated. The starting silicon wafer was masked with checkerboard and line patterns with a 3 μm thick polymethylmethacrylate/photoresist and was implanted with 5×1016 H+ ions/cm2 at 150 keV. After stripping off the mask, the wafer was bonded to an oxide-coated receptor wafer through low-temperature direct wafer bonding. Heat treatment of this bonded pair showed that the hydrogen-induced silicon surface layer cleavage (ion cut) could propagate throughout about 16 μm×16 μm of nonimplanted material with implanted regions only 4 μm wide. Mask width, spacing, and implantation profiles through the mask shape were shown to have effects on the internal microfracturing mechanisms. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122586
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  • 3
    Electronic Resource
    Electronic Resource
    Structure and electrical properties of TiN/GaAs Schottky contacts (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2160-2162 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interface structure and morphology of TiN/GaAs contacts before and after annealing at 500, 700, and 850 °C have been investigated by transmission electron microscopy. Results reveal that pocket-like protrusions are formed beneath the interface after annealing at 500 °C. These pockets increased in number and maximum size with increased annealing temperature. Outdiffusion of Ga and/or As along high angle grain boundaries between columnar structure of the as-deposited TiN thin film has been proposed as being responsible for the pocket formation. The changes of electrical characteristics of these materials after annealing have been related to the formation of these pockets.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99564
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  • 4
    Electronic Resource
    Electronic Resource
    Proximity gettering with mega-electron-volt carbon and oxygen implantations (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1023-1025 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated that a buried gettering layer can be formed with a single MeV ion implantation without damaging the top device region. The strong gettering efficiency of carbon implant and its linear dependence on dose are confirmed. A surprising feature of the carbon implanted layers is that no extended defects are formed after annealing for implant doses up to 2×1016 cm−2 at 3 MeV, compared to a layer of small precipitates and dislocations in the case of oxygen implantation. It is suggested that the carbon-related gettering centers are point defects or their clusters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99233
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  • 5
    Electronic Resource
    Electronic Resource
    Observation of multiple precipitate layers in MeV Au++-implanted silicon (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1796-1798 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature MeV Au++ implantation into silicon with energies above 1.8 MeV shows a splitting of the Au concentration profile in the Rutherford backscattering spectrometry (RBS) spectra. Cross-section transmission electron microscopy micrographs show two distinct regions of Au precipitates corresponding to the peaks in the RBS spectra. The double peaks can be explained by the segregation of Au into the highly damaged region near the end of the implant range and Au segregation along a dislocation network. These dislocations arise from dynamic beam annealing during the implant and act as paths for rapid diffusion. Precipitation occurs when the Au concentration exceeds the solubility limit. Lower energy implants resulted in the expected Gaussian distributions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103103
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  • 6
    Electronic Resource
    Electronic Resource
    Gettering of gold and copper with implanted carbon in silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 889-891 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The gettering effects of implanted carbon for Au and Cu are studied and compared with the gettering effects of implanted oxygen, nitrogen, BF2, neon, and argon. It is demonstrated that implanted carbon forms strong gettering centers in silicon which are an order of magnitude more effective than implanted oxygen. The amount of gettered Au by implanted carbon is found to be approximately linear with dose in the range from 1015 to 1016 cm−2 and no thermal instability is observed with annealing up to 12 h at 1000 °C. It is found that the gettering effect of carbon is reduced by the addition of oxygen. This indicates that the strong gettering effect of carbon is not due to carbon-enhanced oxygen precipitation but a phenomenon of its own.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99263
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  • 7
    Electronic Resource
    Electronic Resource
    Schottky barrier degradation of the W/GaAs system after high-temperature annealing (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3235-3242 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: W/GaAs diodes annealed at temperatures ranging from 100 to 900 °C were investigated with current voltage (I-V) and capacitance voltage (C-V) techniques, Rutherford backscattering spectrometry, scanning electron microscopy, and transmission electron microscopy. Improvements in the diode characteristics were observed after annealing at temperatures below 600 °C. Noticeable degradation in the rectifying behavior of the diodes occurred after annealing at temperatures 〉600 °C. Correlations between the electrical degradation and the interdiffusion of W and GaAs at the interface were found. Our results strongly suggest that the in-diffusion of W leads to the formation of a diffused, highly resistive region near the W/GaAs interface. The high resistance of this region is believed to be caused by the compensation of the substrate dopants by tungsten acceptors. Annealing the diodes at temperatures 〉850 °C resulted in reactions between W and GaAs. The W-GaAs reaction leads to islands of W2As3 at the W/GaAs interface, resulting in physical breakdown of the W/GaAs diode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337744
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  • 8
    Electronic Resource
    Electronic Resource
    Plasma immersion ion implantation of SiF4 and BF3 for sub-100 nm P+/N junction fabrication (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 348-350 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sub-100 nm P+/N junctions were fabricated using plasma immersion ion implantation (PIII). With this technique, the silicon wafer was immersed in SiF4/BF3 plasma and biased with a negative voltage. The positively charged ions in the plasma sheath were accelerated by the electric field and implanted into the wafer. The dose rate of PIII can be much higher than that of conventional ion implanter. Whereas the dopant activation behavior is similar. For extremely shallow P+/N junction formation, sample preamorphization and short cycle rapid thermal annealing (RTA) are required. With SiF4 PIII preamorphization followed by BF3 PIII doping and RTA at 1060 °C for 1 s, 80 nm P+/N junctions were successfully obtained. Test diodes fabricated with this technique show good characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106392
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  • 9
    Electronic Resource
    Electronic Resource
    Thermal annealing characteristics of Si and Mg-implanted GaN thin films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2702-2704 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we report the results of ion implantation of GaN using 28Si and 24Mg species. Structural and electrical characterizations of the GaN thin films after thermal annealing show that native defects in the GaN films dominate over implant doping effects. The formation energies of the annealing induced defects are estimated to range from 1.4 to 3.6 eV. A 40 keV 1014 cm−2 Mg implant results in the decrease of the free-carrier concentration by three orders of magnitude compared to unimplanted GaN up to an annealing temperature of 690 °C. Furthermore, we have observed the correlation between these annealing-induced defects to both improved optical and electrical properties. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116314
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  • 10
    Electronic Resource
    Electronic Resource
    TEM analysis of the influence of dose on damage behavior in MeV Au2+-implanted silicon (1992)
    Springer
    Applied physics 54 (1992), S. 124-131 
    Details
    ISSN: 1432-0630
    Keywords: 81.40 ; 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Extended lattice damage created by implantation of 3.6 MeV Au2+ ions has been investigated using transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). Systematic observations of damage for Au2+ ions implanted with varying doses into silicon are explained in terms of a model. The origin of two distinct bands of extended defects is explained in terms of annealing of the central region of implant-damage, during the course of the implantation. Two distinct bands of Au precipitates are observed in high-dose implanted samples. This observation is explained as being the result, in part, of segregation of gold in front of a recrystallizing front, and in part, of gettering of dopant-atoms to nodes in a dislocation network. The network arises as a result of dynamic annealing of damaged crystalline silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323898
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