GLORIA

GEOMAR Library Ocean Research Information Access

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Effect of dopant incorporation on structural and electrical properties of sprayed SnO2:Sb films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7520-7523 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Antimony-doped tin oxide films were deposited by spray pyrolysis technique. The effect of antimony doping on structural and electrical properties was investigated in detail using the x-ray diffraction technique and room-temperature Hall measurements. Antimony doping did not affect the preferred growth along [200] to a considerable extent. These results were analyzed on the basis of structure factor calculations. From the Hall measurements, the lowest electrical resistivity, i.e., 5.2×10−4 Ω cm was observed for the films with a doping level of 2.3 at. % in the solution. This value of electrical resistivity is the lowest reported so far in the case of spray deposited antimony-doped SnO2 films. The grain boundary and ionized impurity scattering were observed to be prevalent in governing the electronic transport of lightly and heavily doped films, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354000
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Effect of Sn incorporation on the growth mechanism of sprayed SnO2 films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7382-7386 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to probe into the growth mechanism of sprayed SnO2 films, the films were deposited with different Sn concentrations in the precursor solution. The orientational properties were determined using grazing incidence x-ray diffraction. The preferred growth changed from [110] to [200] direction as the Sn incorporation was increased. Such a change in growth can be anticipated from structure factor calculations. The compositional analysis was done using x-ray photoelectron spectroscopy. The Hall effect measurements indicated that the carrier concentration and mobility are sensitively dependent on the orientation and composition of the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349733
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Ion-beam induced structural transformations in hydrogenated microcrystalline silicon (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3773-3779 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion-implantation induced structural transformations are investigated in hydrogenated microcrystalline silicon (μc-Si:H). Ion-beam processing of the μc-Si:H samples was done using 160 keV Ar+ ions at different dose values, in the range of 1013–1016 ions/cm2. Ion-beam induced transformation from the microcrystalline-to-amorphous phase was examined with the help of x-ray diffraction (XRD) and laser-Raman spectroscopic techniques. The conductivity changes in the samples were also monitored as a function of ion dose. It is observed that at a specific threshold ion dose value, the conductivity decreases by more than an order of magnitude. There are concomitant changes in XRD and laser Raman features. Furthermore the results clearly indicate grain growth under ion-beam irradiation at high dose values.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350888
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Structural defects in glow discharge a-Si:C:H investigated by positron annihilation spectroscopy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 242-245 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Glow discharge deposited hydrogenated amorphous silicon carbon alloy films with varying carbon content are studied for structural defects by positron lifetime spectroscopy. Measurements of optical properties like refractive index (n) and band gap (Eg) which indirectly reflect the varying carbon content in the films have also been made. The increased defect density in these films with increasing carbon content is very clearly indicated by the positron lifetime data. The nature of these defects and their relative concentrations are determined from the positron lifetime and intensity values. Interestingly a continuous transformation from one type of defect to the other with increasing carbon is indicated by these results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357134
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Light-induced defect studies in hydrogenated amorphous silicon by exoelectron emission (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1528-1530 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Exoelectron emission was observed from previously light soaked, glow discharge prepared a-Si:H films by thermal stimulation. The energy analysis of exoelectrons was incorporated by a 127° cylindrical deflection analyzer (CDA). Observed energies of exoelectrons (4–8 eV) suggest that the delocalized electron gains energy during emission either from the Coulomb potential or from the exchange of energy from dangling bond annihilation. Several models of dangling bond creation are discussed; however, the actual mechanism appears to be more complex.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103342
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Raman scattering studies of ion beam induced mixing at the amorphous germanium/crystalline silicon interface (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2019-2021 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin layers of amorphous germanium vacuum deposited onto a 〈111〉 surface of crystalline silicon were irradiated with a Kr+ ion beam to produce an amorphous Si-Ge alloy at the interface. Raman scattering measurements were performed on these films both before and after the ion irradiation. The vanishing of the strong Si-Si lattice mode near 521 cm−1 and an appearance of the localized Si-Ge vibrational mode near 375 cm−1 in the Raman spectra of ion-irradiated films are correlated to the formation of an amorphous alloy of probable composition of Si0.2Ge0.8 at the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98279
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Pulsed ruby laser-induced aqueous oxidation of tantalum: X-ray diffraction and x-ray photoelectron spectroscopic study (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2799-2802 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tantalum oxide phases have been synthesized by pulsed ruby laser-induced reactive quenching at a tantalum and water interface (Ta:H2O). The structural and chemical states of the oxides have been characterized by x-ray diffraction and x-ray photoelectron spectroscopy, whereas the surface morphology of these laser-treated samples was studied using scanning electron microscopy. The results are significantly different from those resulting from transformations induced when tantalum is laser-treated in air (Ta:air) at comparable energy density.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339410
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Conversion electron Mössbauer spectroscopic study of ion-beam mixing at Fe-Mo interface (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 388-394 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion beam induced atomic mixing at Fe-Mo interface has been studied by using the technique of conversion electron Mössbauer spectroscopy (CEMS). Use has been made of a thin (∼50 A(ring)) layer of Fe57 isotope (enriched to 95.4%) at the interface to obtain the Mössbauer information selectively from this region. A noninterface sensitive measurement has also been performed to reveal the magnetic hyperfine interactions in the entire region of the iron overlayer. It is shown that a deposition induced reaction between the molybdenum substrate (having a thin coating of native oxide) and the Fe57 layer renders a graded nature to the interface, which is transformed upon ion bombardment (100-keV Kr+, dose ∼1016 ions/cm2) into a disordered alloy. The dominant nonmagnetic component corresponding to the interface of the ion beam mixed sample happens to be a quadrupole doublet, which represents the presence of Fe57 atoms in Fe2+ charge state. The appearance of this contribution is attributed to formation of an oxygen coordinated ternary compound in the interface layer during ion bombardment. On the basis of the comparison of the results of the interface-sensitive and non-interface-sensitive studies it is established that the inclusion of oxygen in the ion mixed sample is mainly confined to the near interface region and that the region of the overlayer contains a metastable alloy of the binary Fe-Mo system. The influence of thermal annealing at various temperatures between 200 °C and 500 °C on the ion beam mixed state has also been studied by monitoring the changes in the hyperfine interaction parameters. It is shown that the oxygen-incorporated regions of the disordered alloy retain the nonmagnetic Fe2+ charge state subsequent to annealing at 500 °C, while other regions lead to precipitation of α-Fe and Fe2Mo phases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336641
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Positron-lifetime studies of hydrogenated amorphous silicon (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 108-116 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Positron-lifetime studies have been carried out on hydrogenated amorphous silicon (a-Si:H) films prepared by the glow-discharge method. Films deposited and thermally annealed at different temperatures have been investigated for determination of microstructural aspects such as hydrogen content, microvoids, vacancies, etc. The appearance of a long-lifetime component (τ3〉3 ns) in the lifetime spectrum together with a narrow peak in the two-dimensional angular correlation of positron-annihilation radiation confirms existence of large microvoids in the films. The systematics of the variation of the intensity of the long-lifetime component (I3) as a function of the deposition and annealing temperature is studied in detail. This study clearly shows that molecular hydrogen exists at high pressure in the microvoids and it effuses out at elevated temperature, leaving behind empty microvoids in the film. Two stages of effusion of hydrogen at 275 and 600 °C have been clearly identified in films deposited at 25 °C. Interestingly, the films deposited at 300 °C exhibit only the high-temperature effusion stage, establishing thereby that the low-temperature stage relates to trapped molecular hydrogen, while the one corresponding to high temperature (600 °C) relates to bonded hydrogen. The positronium lifetime (τ3) shows an increase with annealing temperature, representing growth of microvoid dimensions, presumably due to ensuance of an agglomeration process concurrent with hydrogen effusion. Information concerning the presence of quadrivacancies and pentavacancies in the films and their response to thermal treatment is also obtained from the study of the intensity (I2) and lifetime (τ2) corresponding to the trapped positron state. An attempt has been made to correlate the positronium component with electron-spin-resonance results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339167
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    X-ray diffraction studies of microstructural transformations in single-crystal silicon during current filamentation (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5279-5285 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The (111) Bragg peak of p- and n-Si single crystals is studied when a large dc current (average current density 10 A/cm2) is passing through the specimen. The integrated intensity of the peak changed drastically with time after current filamentation, showing existence of microstructural transformations. The fresh samples (type A) showed a decrease in integrated intensity by a factor of about 50, 15 min after current filamentation, with a limiting current of 330 mA passing through the sample. The intensity partially recovered when the current was switched off, and, after cooling to room temperature, the specimen behaved differently when the electric field was again applied. The specimen (type B) then showed an increase in integrated intensity a couple of minutes after current filamentation so that the diffracted intensity became comparable to the type A specimen. Thereafter, with continued high current passing through the specimen, it behaved like a fresh silicon sample. The results are interpreted by considering formation of current filaments and consequent local heating.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338263
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...