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  • 1
    Electronic Resource
    Electronic Resource
    Ion-beam induced oxidation of GaAs and AlGaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3010-3022 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxidation of GaAs and AlxGa1−xAs targets by oxygen irradiation has been studied in detail. It was found that the oxidation process is characterized by the strong preferential oxidation of Al as compared to Ga, and of Ga as compared to As. This experimental observation, which has been accurately quantified by using x-ray photoelectron spectroscopy, is connected to the different heats of formation of the corresponding oxides. The oxide grown by ion-beam oxidation shows a strong depletion in As and relatively low oxidation of As as well. The depletion can be associated with the preferential sputtering of the As oxide in respect to other compounds whereas the low oxidation is due to the low heat of formation. In contrast Al is rapidly and fully oxidized, turning the outermost layer of the altered layer to a single Al2O3 overlayer, as observed by transmission electron microscopy. The radiation enhanced diffusion of oxygen and aluminum in the altered layer explains the large thickness of these altered layers and the formation of Al oxides on top of the layers. For the case of ion-beam oxidation of GaAs a simulation program has been developed which describes adequately the various growth mechanisms experimentally observed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358650
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  • 2
    Electronic Resource
    Electronic Resource
    The valence band alignment at ultrathin SiO2/Si interfaces (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1606-1608 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High resolution x-ray photoelectron spectroscopy has been used to determine the valence band alignment at ultrathin SiO2/Si interfaces. In the oxide thickness range 1.6–4.4 nm the constant band-offset values of 4.49 and 4.43 eV have been obtained for the dry SiO2/Si(100) and the wet SiO2/Si(100) interfaces, respectively. The valence band alignment of dry SiO2/Si(111) (4.36 eV) is slightly smaller than the case of the dry SiO2/Si(100) interface. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363895
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  • 3
    Electronic Resource
    Electronic Resource
    Core-level shifts of silicon–hydrogen species on chemically treated Si surfaces studied by high-resolution x-ray photoelectron spectroscopy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2049-2051 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Chemical shifts of Si–Hx (x=1,2) species on Si surfaces obtained by ex situ chemical treatment have been evaluated by high-resolution x-ray photoelectron spectroscopy at a take-off angle of 5°. Optimizing the water rinse and sample loading conditions enables identification of the Si–Hx components of the Si 2p core-level spectra, whose intensities display strong dependence on crystallographic orientation and surface treatment. NH4F-treated Si(111) exhibits almost exclusive monohydride termination which induces a chemical shift of 250 meV relative to the bulk component. On the other hand, 4.5% HF-treated Si(111) and 1% HF-treated Si(100) surfaces show increased dihydride termination with an associated shift of 480 meV. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115074
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  • 4
    Electronic Resource
    Electronic Resource
    Correlation between XPS, Raman and TEM measurements and the gas sensitivity of Pt and Pd doped SnO2 based gas sensors (1998)
    Springer
    Fresenius' journal of analytical chemistry 361 (1998), S. 110-114 
    Details
    ISSN: 1432-1130
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Nanocrystalline thick-film SnO2 sensors with different dopants were fabricated by an optimized screen printing process and subsequent annealing. Powders were used as starting materials which were prepared by a wet chemical process from SnCl4. Microanalysis was performed of both, the precursors and the final sensor materials with their different annealing conditions. Gas sensing tests with CO, CH4 and NO2 in air with controlled humidity were correlated with results from X-ray photoemission spectroscopy (XPS), Raman spectroscopy and transmission electron microscopy (TEM). As an interesting result, the distribution of the transition metal dopants Pd and Pt (as deduced from TEM and XPS data) rules out the existence of metallic clusters or even atoms in the metallic state at the surface. This finding does not allow to explain the sensor effects on SnO2 based materials as usually done by means of spill-over effects or Fermi energy control.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002160050844
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  • 5
    Electronic Resource
    Electronic Resource
    Quantitative analysis of W(N), TiW and TiW(N) matrices using XPS, AES, RBS, EPMA and XRDPaper presented at QSA-6, London, November, 1990. (1991)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 17 (1991), S. 373-382 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The structural and quantitative chemical analyis of tungsten nitrides and titanium-tungsten nitrides with variable N content (denoted as W(N) and TiW(N)) are explored by a combination of different analysis techniques. Special attention is given to the unraveling by XPS of the different binding states that are present in the surface contamination layer and in the bulk of the layers. The determination of our own sensitivity factors is essential for accurate quantification of both XPS and AES data. Comparison of the different techniques shows the presence of strong preferential sputtering for W(N) alloys, whereas this effect is unimportant for TiW(N). The influence of the vacuum of the analysis chamber of XPS and AES on the results is studied thoroughly.
    Additional Material: 11 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740170613
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  • 6
    Electronic Resource
    Electronic Resource
    XPS analysis of ion-beam-induced oxidation of silicon substrates (1992)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 19 (1992), S. 313-317 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: XPS analysis was used to characterize Si (100) targets bombarded with an O2+ beam with energies ranging between 5.00 and 0.50 keV and incident angles between 0° and 75°. In this energy range and at normal incidence a homogeneous SiO2 layer is built up in a sequential suboxide replacement mechanism, while for bombardments at 5.00 keV and incident angles between 28° and 55° only a heterogeneous layer is formed. The latter contain elemental silicon, evenly spread in the altered layer, and all possible oxidized chemical states. For bombardments at high glancing angles (55°-75°) only a few suboxides are observed. Finally, a linear enhancement for the Si+ secondary ion yield w.r.t. the Si4+ relative concentration is found, except for very high Si4+ level concentrations where a strong non-linear increase takes place.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740190159
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